215 research outputs found
A Complementary Resistive Switch-based Crossbar Array Adder
Redox-based resistive switching devices (ReRAM) are an emerging class of
non-volatile storage elements suited for nanoscale memory applications. In
terms of logic operations, ReRAM devices were suggested to be used as
programmable interconnects, large-scale look-up tables or for sequential logic
operations. However, without additional selector devices these approaches are
not suited for use in large scale nanocrossbar memory arrays, which is the
preferred architecture for ReRAM devices due to the minimum area consumption.
To overcome this issue for the sequential logic approach, we recently
introduced a novel concept, which is suited for passive crossbar arrays using
complementary resistive switches (CRSs). CRS cells offer two high resistive
storage states, and thus, parasitic sneak currents are efficiently avoided.
However, until now the CRS-based logic-in-memory approach was only shown to be
able to perform basic Boolean logic operations using a single CRS cell. In this
paper, we introduce two multi-bit adder schemes using the CRS-based
logic-in-memory approach. We proof the concepts by means of SPICE simulations
using a dynamical memristive device model of a ReRAM cell. Finally, we show the
advantages of our novel adder concept in terms of step count and number of
devices in comparison to a recently published adder approach, which applies the
conventional ReRAM-based sequential logic concept introduced by Borghetti et
al.Comment: 12 pages, accepted for IEEE Journal on Emerging and Selected Topics
in Circuits and Systems (JETCAS), issue on Computing in Emerging Technologie
What changes do we want to see at the next OWCs?
The Organic World Congress (OWC) will analyze the situation of the Organic world in 2014, discuss issues and develop strategies. Approaching our visions in a changing environment requires constant adjustments and actions. This applies equally to farmers, the value chain, consumption and the organic support sector. The OWC is an opportunity to reach shared conclusions on what actions and alliances with likeminded organizations (e.g. nature conversation or animal welfare NGOs) are needed so that the Organic World can grow and become more sustainable at the same time
Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices
Highly accurate and predictive models of resistive switching devices are
needed to enable future memory and logic design. Widely used is the memristive
modeling approach considering resistive switches as dynamical systems. Here we
introduce three evaluation criteria for memristor models, checking for
plausibility of the I-V characteristics, the presence of a sufficiently
non-linearity of the switching kinetics, and the feasibility of predicting the
behavior of two anti-serially connected devices correctly. We analyzed two
classes of models: the first class comprises common linear memristor models and
the second class widely used non-linear memristive models. The linear memristor
models are based on Strukovs initial memristor model extended by different
window functions, while the non-linear models include Picketts physics-based
memristor model and models derived thereof. This study reveals lacking
predictivity of the first class of models, independent of the applied window
function. Only the physics-based model is able to fulfill most of the basic
evaluation criteria.Comment: 9 pages; accepted for IEEE TCAS-
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Engineering design of the FRX-C experiment
Research on Compact Toroid (CT) configurations has been greatly accelerated in the last few years because of their potential for providing a practical and economical fusion system. Los Alamos research is being concentrated on two types of configurations: (1) magnetized-gun-produced Spheromaks (configurations that contain a mixture of toroidal and poloidal fields); and (2) field-reversed configurations (FRCs) that contain purely poloidal magnetic field. This paper describes the design of FRX-C, a field-reversed theta pinch used to form FRCs
Shallow rainwater lenses in deltaic areas with saline seepage
In deltaic areas with saline seepage, freshwater availability is often limited to shallow rainwater lenses lying on top of saline groundwater. Here we describe the characteristics and spatial variability of such lenses in areas with saline seepage and the mechanisms that control their occurrence and size. Our findings are based on different types of field measurements and detailed numerical groundwater models applied in the south-western delta of the Netherlands. By combining the applied techniques we could extrapolate measurements at point scale (groundwater sampling, temperature and electrical soil conductivity (TEC)-probe measurements, electrical cone penetration tests (ECPT)) to field scale (continuous vertical electrical soundings (CVES), electromagnetic survey with EM31), and even to regional scale using helicopter-borne electromagnetic measurements (HEM). The measurements show a gradual mixing zone between infiltrating fresh rainwater and upward flowing saline groundwater. The mixing zone is best characterized by the depth of the centre of the mixing zone <i>D</i><sub>mix</sub>, where the salinity is half that of seepage water, and the bottom of the mixing zone <i>B</i><sub>mix</sub>, with a salinity equal to that of the seepage water (Cl-conc. 10 to 16 g l<sup>−1</sup>). <i>D</i><sub>mix</sub> is found at very shallow depth in the confining top layer, on average at 1.7 m below ground level (b.g.l.), while <i>B</i><sub>mix</sub> lies about 2.5 m b.g.l. The model results show that the constantly alternating upward and downward flow at low velocities in the confining layer is the main mechanism of mixing between rainwater and saline seepage and determines the position and extent of the mixing zone (<i>D</i><sub>mix</sub> and <i>B</i><sub>mix</sub>). Recharge, seepage flux, and drainage depth are the controlling factors
Age Trajectories of the Structural Connectome in Child and Adolescent Offspring of Individuals With Bipolar Disorder or Schizophrenia
Background: Offspring of parents with severe mental illness (e.g., bipolar disorder or schizophrenia) are at elevated risk of developing psychiatric illness owing to both genetic predisposition and increased burden of environmental stress. Emerging evidence indicates a disruption of brain network connectivity in young offspring of patients with bipolar disorder and schizophrenia, but the age trajectories of these brain networks in this high-familial-risk population remain to be elucidated. Methods: A total of 271 T1-weighted and diffusion-weighted scans were obtained from 174 offspring of at least 1 parent diagnosed with bipolar disorder (n = 74) or schizophrenia (n = 51) and offspring of parents without severe mental illness (n = 49). The age range was 8 to 23 years; 97 offspring underwent 2 scans. Anatomical brain networks were reconstructed into structural connectivity matrices. Network analysis was performed to investigate anatomical brain connectivity. Results: Offspring of parents with schizophrenia had differential trajectories of connectivity strength and clustering compared with offspring of parents with bipolar disorder and parents without severe mental illness, of global efficiency compared with offspring of parents without severe mental illness, and of local connectivity compared with offspring of parents with bipolar disorder. Conclusions: The findings of this study suggest that familial high risk of schizophrenia is related to deviations in age trajectories of global structural connectome properties and local connectivity strength.</p
Age Trajectories of the Structural Connectome in Child and Adolescent Offspring of Individuals With Bipolar Disorder or Schizophrenia
Background: Offspring of parents with severe mental illness (e.g., bipolar disorder or schizophrenia) are at elevated risk of developing psychiatric illness owing to both genetic predisposition and increased burden of environmental stress. Emerging evidence indicates a disruption of brain network connectivity in young offspring of patients with bipolar disorder and schizophrenia, but the age trajectories of these brain networks in this high-familial-risk population remain to be elucidated. Methods: A total of 271 T1-weighted and diffusion-weighted scans were obtained from 174 offspring of at least 1 parent diagnosed with bipolar disorder (n = 74) or schizophrenia (n = 51) and offspring of parents without severe mental illness (n = 49). The age range was 8 to 23 years; 97 offspring underwent 2 scans. Anatomical brain networks were reconstructed into structural connectivity matrices. Network analysis was performed to investigate anatomical brain connectivity. Results: Offspring of parents with schizophrenia had differential trajectories of connectivity strength and clustering compared with offspring of parents with bipolar disorder and parents without severe mental illness, of global efficiency compared with offspring of parents without severe mental illness, and of local connectivity compared with offspring of parents with bipolar disorder. Conclusions: The findings of this study suggest that familial high risk of schizophrenia is related to deviations in age trajectories of global structural connectome properties and local connectivity strength.</p
The effect of artificial diffusivity on the flute instability
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FRC formation and trapping by counter injection for MTF liner implosions
A new simplified design is being developed for injecting and trapping Field-Reversed Configurations (FRCs) into liners, which is compatible with the energetic liner implosions of interest for Magnetized Target Fusion (MTF). Conical theta pinches that inject from each end of the liner region are proposed. The conical angle can be chosen to make axial translation out of the conical theta pinch into the liner region occur on approximately the same time scale as radial compression. Thus no crowbar switch is needed for the high-voltage fast-rising current pulse. The toroidal field from conical theta-pinch injection and/or Z-pinch preionization should rapidly annihilate upon merging of the two oppositely directed FRCs. Two dc coils in a Helmholtz-like configuration are all that are needed to serve the functions of cusp, translation, and mirror fields for trapping in the liner. The mirror strength required for trapping is not as critical as when using onesided injection because the merging FRCs have no net momentum when they collide. Previously observed damping of axial kinetic energy suggests that viscous damping parallel to B 'is strong for FRCs with mfp comparable to FRC length, and conversion of directed energy to thermal energy should occur on a time scale comparable to the injection time. The electrical/mechanical details will be described, accompanied by numerical simulations of FRC formation using the MACH2 numerical code
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