190 research outputs found

    InAsP/AlGaInP/GaAs QD laser operating at ∼770 nm

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    We present a study of metalorganic vapour phase epitaxy of ternary InAsP quantum dots in AlGaInP/GaAs for application in laser diodes. The properties of InAsP QD laser structures were compared with reference samples containing binary InP QDs. Based on X-ray diffraction, the molar fraction of arsenic in InAsP QDs was estimated to be ~25%. Room temperature liquid contact electro-luminescence measurements revealed a long wavelength shift of the InAsP QD emission to ~775 nm as compared with the InP QD emission at 716 nm and an increased full width at half maximum of the spontaneous emission (71 meV vs 50 meV). As cleaved, 4 mm long and 50 µm wide InAsP QD lasers operated in a pulsed regime at room temperature at ~770 nm with a threshold current density of 155 A/cm and a maximum output optical power of at least 200 mW. The maximum operation temperature was at least 380 K

    Growth and characterisation of InAsP/AlGaInP QD laser structures

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    We present a study of metalorganic vapour phase epitaxy of ternary InAsP quantum dots on AlGaInP/GaAs. The properties of InAsP QD laser structures were compared with reference samples containing binary InP QDs. Based on X-ray diffraction, the molar fraction of As in InAsP QDs was estimated to be ~25%. Room temperature liquid contact electro-luminescence measurements revealed a long wavelength shift of the InAsP QD emission to ~775 nm as compared with the InP QD emission at 716 nm and an increased full width at half maximum of the spontaneous emission (71 meV vs 50 meV). As cleaved, 4 mm long and 50 μm wide InAsP QD lasers operated in a pulsed regime at room temperature at ~770 nm with a threshold current density of 155 A/cm2 and a maximum output optical power of at least ~200 mW. The maximum operation temperature was at least 380 K

    Dual-wavelength InP quantum dot lasers

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    We have demonstrated a two-section dual-wavelength diode laser incorporating distributed Bragg reflectors, with a peak-wavelength separation of 62.5 nm at 300 K. Each lasing wavelength has a different temperature dependence, providing a difference-tuning of 0.11 nm/K. We discuss the mechanisms governing the light output of the two competing modes and explain how the short wavelength can be relatively insensitive to output changes at the longer wavelength. Starting from an initial condition when the output at both wavelengths are equal, a 500% increase in the long wavelength output causes the short wavelength output to fall by only 6%

    Co-doped 1.3μm InAs Quantum Dot Lasers with high gain and low threshold current

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    The mechanism by which co-doping reduces threshold current in O-band Quantum dot lasers is examined, with n-type direct doping of the dots reducing threshold current and p-type modulation doping improving the temperature dependence of threshold current density, relative to undoped samples

    Applying machine learning to improve simulations of a chaotic dynamical system using empirical error correction

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    Dynamical weather and climate prediction models underpin many studies of the Earth system and hold the promise of being able to make robust projections of future climate change based on physical laws. However, simulations from these models still show many differences compared with observations. Machine learning has been applied to solve certain prediction problems with great success, and recently it's been proposed that this could replace the role of physically-derived dynamical weather and climate models to give better quality simulations. Here, instead, a framework using machine learning together with physically-derived models is tested, in which it is learnt how to correct the errors of the latter from timestep to timestep. This maintains the physical understanding built into the models, whilst allowing performance improvements, and also requires much simpler algorithms and less training data. This is tested in the context of simulating the chaotic Lorenz '96 system, and it is shown that the approach yields models that are stable and that give both improved skill in initialised predictions and better long-term climate statistics. Improvements in long-term statistics are smaller than for single time-step tendencies, however, indicating that it would be valuable to develop methods that target improvements on longer time scales. Future strategies for the development of this approach and possible applications to making progress on important scientific problems are discussed.Comment: 26p, 7 figures To be published in Journal of Advances in Modeling Earth System

    1.3-μm InAs Quantum Dot Lasers with P-type modulation and direct N-type co-doping

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    O-band quantum dot lasers with co-doping reduce threshold current density relative to the undoped case, for 1mm long uncoated lasers from 245Acm-2 to 132Acm-2 at 27°C and 731Acm-2 to 312Acm-2 at 97°C. Improvements are also significant compared to lasers employing any one doping strategy

    QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots

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    The quantum confined Stark effect in InAs/InGaAs QDs using an undoped and p-modulation doped active region was investigated. Doping potentially offers more than a 3x increase in figure of merit modulator performance up to 100°C

    Si-based 1.3 μm InAs/GaAs QD Lasers

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    The effects of implementing Ge and Si buffer layers on the performance of Si-based InAs/GaAs quantum dot lasers have been investigated in this paper. The laser performance has been improved significantly by utilising group-IV buffer layers
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