The Gate Inductance Influence on IGBT Switching Performance Under Current and Voltage Gate Drivers

 The performance of IGBTs directly affects system efficiency, power density, and reliability. Gate drivers can be used to control IGBTs by managing their gate voltage and gate current. This study compares current-source and voltage-source gate drivers and their effects on IGBT switching behaviours. The results show that IGBT is more resilient to interference with current-source gate drivers. </p

Impact of β of accuracy.

<p>(a) and (b) depict the MAE and RMSE fractions of 100 users, 200 users and 300 users for QoS values at the fixed expectation <i>L</i>_<i>max</i> = 2 and <i>δ</i> = 2, where the parameter <i>β</i> is varied from -15 to -3 in increment of 1.</p

Trust Relationship.

<p>(a), (b) and (c) depict direct, indirect, and hybrid trust respectively, where A is the target user. B, C, and D are other users which are trusted by A.</p

Rankings of three methods.

<p>Rankings of three methods.</p

Impact Lmax of accuracy.

<p>(a) and (b) depict the MAE and RMSE fractions of 100 users, 200 users and 300 users for QoS values at the fixed expectation <i>β</i> = -8, which is the optimum value obtained in the previous experiments, and <i>δ</i> = 2. The parameter <i>L</i>_<i>max</i> is varied from 0 to 5 in increment of 1.</p

Impact δ of accuracy.

<p>(a) and (b) depict the MAE and RMSE fractions of 100 users, 200 users and 300 users for QoS values at the fixed expectation <i>β</i> = -8 and <i>L</i>_<i>max</i> = 4, which are the optimum values obtained in the previous experiments. The parameter <i>δ</i> is varied from -15 to -3 1 to 100 at a step of 1. When <i>δ</i> = 1, we do not consider trust relationships.</p

Trust utility function.

<p>(a) and (b) depict the trust utility function impacted by parameters <i>α</i> and <i>β</i>. Suppose the minimum and the maximum trust degrees are 0 and 1 respectively, and by adjusting <i>α</i> and <i>β</i>, we could change the function form.</p

A four-step control for IGBT switching improvement using an active voltage gate driver

Gate drivers form an essential interface between the high power transistors and low voltage control circuits in power converters to govern the transistor switching operations and maintain other ancillary functions. A sophisticated gate driver with a segmented drive booster allows optimized trajectories to be staged out during switching transitions, which provides an extended degree of control freedom at the device level. This helps to improve the trade-offs between multifaceted parameters such as switching losses, overshoots, ringing, and electromagnetic interference, parasitic turn-on fault, etc. In this paper, a digitalized active gate driver with segmented voltage control is designed and experimentally verified, which is capable of shaping the dynamic switching waveforms of Insulated Gate Bipolar Transistors (IGBT) using a four-step gate control method. Compared to the traditional constant voltage gate driver method and the three-step segmented method, the proposed four-step AVGD control demonstrates reductions of the IGBT turn-on current overshoot and suppressions of the voltage overshoot on the complementary freewheeling diode without sacrificing its turn-on switching losses

Similarities between different services.

<p>Similarities between different services.</p

Online cloud storage services.

<p>Online cloud storage services.</p