Hall effect in cobalt-doped TiO2−δ_{2-\delta}

We report Hall effect measurements on thin films of cobalt-doped TiO$_{2-\delta}$. Films with low carrier concentrations (10$^{18}$ - 10$^{19}$) yield a linear behavior in the Hall data while those having higher carrier concentrations (10$^{21}$ - 10$^{22}$) display anomalous behavior near zero field. In the entire range of carrier concentration, n-type conduction is observed. The appearance of the anomalous behavior is accompanied by a possible structural change from rutile TiO$_{2}$ to Ti_[n}O$_{2n-1}$ Magneli phase(s)

Optical band edge shift of anatase cobalt-doped titanium dioxide

We report on the optical properties of magnetic cobalt-doped anatase phase titanium dioxide Ti_{1-x}Co_{x}O_{2-d} films for low doping concentrations, 0 <= x <= 0.02, in the spectral range 0.2 to 5 eV. For well oxygenated films (d << 1) the optical conductivity is characterized by an absence of optical absorption below an onset of interband transitions at 3.6 eV and a blue shift of the optical band edge with increasing Co concentration. The absence of below band gap absorption is inconsistent with theoretical models which contain midgap magnetic impurity bands and suggests that strong on-site Coulomb interactions shift the O-band to Co-level optical transitions to energies above the gap.Comment: 5 pages, 4 figures, 1 table; Version 2 - major content revisio

Ferromagnetism in laser deposited anatase Ti1−x_{1-x}Cox_{x}O_{2-\delta} films

Pulsed laser deposited films of Co doped anatase TiO2 are examined for Co substitutionality, ferromagnetism, transport, magnetotransport and optical properties. Our results show limited solubility (up to ~ 2 %) of Co in the as-grown films and formation of Co clusters thereafter. For Ti0.93Co0.07O2-d sample, which exhibits a Curie temperature (Tc) over 1180 K, we find the presence of 20-50 nm Co clusters as well as a small concentration of Co incorporated into the remaining matrix. After being subjected to the high temperature anneal during the first magnetization measurement, the very same sample shows a Tc ~ 650 K and almost full matrix incorporation of Co. This Tc is close to that of as-grown Ti0.99Co0.01O2-d sample (~ 700 K). The transport, magnetotransport and optical studies also reveal interesting effects of the matrix incorporation of Co. These results are indicative of an intrinsic Ti1-xCoxO2-d diluted magnetic semiconductor with Tc of about 650-700 K.Comment: 14 pages + 9 figure

High Temperature Ferromagnetism with Giant Magnetic Moment in Transparent Co-doped SnO2-d

Occurrence of room temperature ferromagnetism is demonstrated in pulsed laser deposited thin films of Sn1-xCoxO2-d (x<0.3). Interestingly, films of Sn0.95Co0.05O2-d grown on R-plane sapphire not only exhibit ferromagnetism with a Curie temperature close to 650 K, but also a giant magnetic moment of about 7 Bohr-Magneton/Co, not yet reported in any diluted magnetic semiconductor system. The films are semiconducting and optically highly transparent.Comment: 12 pages, 4 figure

Substrate-induced strain effects on Pr_{0.6}Ca_{0.4}MnO_{3} films

We report the characterization of the crystal structure, low-temperature charge and orbital ordering, transport, and magnetization of Pr_{0.6}Ca_{0.4}MnO_{3} films grown on LaAlO_{3}, NdGaO_{3}, and SrTiO_{3} substrates, which provide compressive (LaAlO_{3}) and tensile (NdGaO_{3} and SrTiO_{3}) strain. The films are observed to exhibit different crystallographic symmetries than the bulk material, and the low-temperature ordering is found to be more robust under compressive-- as opposed to tensile-- strain. In fact, bulk-like charge and orbital ordering is not observed in the film grown on NdGaO_{3}, which is the substrate that provides the least amount of nominal and measured, but tensile, strain. This result suggests the importance of the role played by the Mn--O--Mn bond angles in the formation of charge and orbital ordering at low temperatures. Finally, in the film grown on LaAlO_{3}, a connection between the lattice distortion associated with orbital ordering and the onset of antiferromagnetism is reported.Comment: 12 pages, 7 figure

Application of Graphene within Optoelectronic Devices and Transistors

Scientists are always yearning for new and exciting ways to unlock graphene's true potential. However, recent reports suggest this two-dimensional material may harbor some unique properties, making it a viable candidate for use in optoelectronic and semiconducting devices. Whereas on one hand, graphene is highly transparent due to its atomic thickness, the material does exhibit a strong interaction with photons. This has clear advantages over existing materials used in photonic devices such as Indium-based compounds. Moreover, the material can be used to 'trap' light and alter the incident wavelength, forming the basis of the plasmonic devices. We also highlight upon graphene's nonlinear optical response to an applied electric field, and the phenomenon of saturable absorption. Within the context of logical devices, graphene has no discernible band-gap. Therefore, generating one will be of utmost importance. Amongst many others, some existing methods to open this band-gap include chemical doping, deformation of the honeycomb structure, or the use of carbon nanotubes (CNTs). We shall also discuss various designs of transistors, including those which incorporate CNTs, and others which exploit the idea of quantum tunneling. A key advantage of the CNT transistor is that ballistic transport occurs throughout the CNT channel, with short channel effects being minimized. We shall also discuss recent developments of the graphene tunneling transistor, with emphasis being placed upon its operational mechanism. Finally, we provide perspective for incorporating graphene within high frequency devices, which do not require a pre-defined band-gap.Comment: Due to be published in "Current Topics in Applied Spectroscopy and the Science of Nanomaterials" - Springer (Fall 2014). (17 pages, 19 figures