Evolution of thin protecting Si-layer on Mn0.5Si0.5 layer at low temperatures

Evolution of 2-nm-thick protecting Si-layer on amorphous Mn0.5Si0.5 films at elevated temperatures was investigated by using conductive atom force microscopy (CAFM) and other structure and composition characterization methods. At a temperature of 300 degrees C, a dramatic change was observed in surface morphology with many islands forming on the surface. Those islands were SiO2 islands rather than Si ones. Further studies showed that those islands formed via first oxidation of the Si cap layer followed by the agglomeration of this SiO2 layer. Because Si cap layer has widely been used as protecting materials to prevent the surface from oxidizing and contamination, this study provides an insight on the effectiveness of thin protecting Si-layer at low temperatures. (C) 2015 Elsevier B.V. All rights reserved

Distribution Characteristics and Main Control Measures of Spartina alterniflora in Mainland China

The rapid invasion and spread of Spartina alterniflora will cause great damage to the ecological environment of the invasive areas. Spartina alterniflora is widely distributed in coastal areas from north to south of China, which seriously reduces the biodiversity and ecological barrier function of the coastal zone. The main control methods of Spartina alterniflora invasion in China include physical, chemical and biological control. At present, the single control methods, such as mowing, crushing and burying, and cofferdam flooding, can effectively control the invasion of Spartina alterniflora in small areas, but the control effect of large areas or patches is not good. Based on the analysis and comparison of the existing control methods, combined with the practical experience of scientific research, this paper put forward a comprehensive control method of Spartina alterniflora suitable for different areas of China, which combined the physical control method, chemical control method and biological control method