Digitally modulated bit error rate measurement system for microwave component evaluation

The NASA Lewis Research Center has developed a unique capability for evaluation of the microwave components of a digital communication system. This digitally modulated bit-error-rate (BER) measurement system (DMBERMS) features a continuous data digital BER test set, a data processor, a serial minimum shift keying (SMSK) modem, noise generation, and computer automation. Application of the DMBERMS has provided useful information for the evaluation of existing microwave components and of design goals for future components. The design and applications of this system for digitally modulated BER measurements are discussed

Data compression for the microgravity experiments

Researchers present the environment and conditions under which data compression is to be performed for the microgravity experiment. Also presented are some coding techniques that would be useful for coding in this environment. It should be emphasized that researchers are currently at the beginning of this program and the toolkit mentioned is far from complete

Satellite-matrix-switched, time-division-multiple-access network simulator

A versatile experimental Ka-band network simulator has been implemented at the NASA Lewis Research Center to demonstrate and evaluate a satellite-matrix-switched, time-division-multiple-access (SMS-TDMA) network and to evaluate future digital ground terminals and radiofrequency (RF) components. The simulator was implemented by using proof-of-concept RF components developed under NASA contracts and digital ground terminal and link simulation hardware developed at Lewis. This simulator provides many unique capabilities such as satellite range delay and variation simulation and rain fade simulation. All network parameters (e.g., signal-to-noise ratio, satellite range variation rate, burst density, and rain fade) are controlled and monitored by a central computer. The simulator is presently configured as a three-ground-terminal SMS-TDMA network

Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz

The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFET's) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 microns. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased

Quaternary pulse position modulation electronics for free-space laser communications

The development of a high data-rate communications electronic subsystem for future application in free-space, direct-detection laser communications is described. The dual channel subsystem uses quaternary pulse position modulation (QPPM) and operates at a throughput of 650 megabits per second. Transmitting functions described include source data multiplexing, channel data multiplexing, and QPPM symbol encoding. Implementation of a prototype version in discrete gallium arsenide logic, radiofrequency components, and microstrip circuitry is presented