12 research outputs found
Correlation of p-doping in CVD Graphene with Substrate Surface Charges
Correlations between the level of p-doping exhibited in large area chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual charges created by a variety of surface treatments to the silicon dioxide (SiO(2)) substrates prior to CVD graphene transfer are measured. Beginning with graphene on untreated thermal oxidised silicon, a minimum conductivity (σ(min)) occurring at gate voltage V(g) = 15 V (Dirac Point) is measured. It was found that more aggressive treatments (O(2) plasma and UV Ozone treatments) further increase the gate voltage of the Dirac point up to 65 V, corresponding to a significant increase of the level of p-doping displayed in the graphene. An electrowetting model describing the measured relationship between the contact angle (θ) of a water droplet applied to the treated substrate/graphene surface and an effective gate voltage from a surface charge density is proposed to describe biasing of V(g) at σ(min) and was found to fit the measurements with multiplication of a correction factor, allowing effective non-destructive approximation of substrate added charge carrier density using contact angle measurements
Non-contact method for measurement of the microwave conductivity of graphene
We report a non-contact method for conductivity and sheet resistance
measurements of graphene samples using a high Q microwave dielectric resonator
perturbation technique, with the aim of fast and accurate measurement of
microwave conductivity and sheet resistance of monolayer and few layers
graphene samples. The dynamic range of the microwave conductivity measurements
makes this technique sensitive to a wide variety of imperfections and
impurities and can provide a rapid non-contacting characterisation method.
Typically the graphene samples are supported on a low-loss dielectric
substrate, such as quartz, sapphire or SiC. This substrate is suspended in the
near-field region of a small high Q sapphire puck microwave resonator. The
presence of the graphene perturbs both centre frequency and Q value of the
microwave resonator. The measured data may be interpreted in terms of the real
and imaginary components of the permittivity, and by calculation, the
conductivity and sheet resistance of the graphene. The method has great
sensitivity and dynamic range. Results are reported for graphene samples grown
by three different methods: reduced graphene oxide (GO), chemical vapour
deposition (CVD) and graphene grown epitaxially on SiC. The latter method
produces much higher conductivity values than the others.Comment: 8 pages, 2 figures and 2 table
Growth of Epitaxial Oxide Thin Films on Graphene
The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridgepillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices
Microwave study of field-effect devices based on graphene/aluminum nitride/graphene structures
Metallic gate electrodes are often employed to control the conductivity of graphene based field effect devices. The lack of transparency of such electrodes in many optical applications is a key limiting factor. We demonstrate a working concept of a double layer graphene field effect device that utilizes a thin film of sputtered aluminum nitride as dielectric gate material. For this system, we show that the graphene resistance can be modified by a voltage between the two graphene layers. We study how a second gate voltage applied to the silicon back gate modifies the measured microwave transport data at around 8.7 GHz. As confirmed by numerical simulations based on the Boltzmann equation, this system resembles a parallel circuit of two graphene layers with different intrinsic doping levels. The obtained experimental results indicate that the graphene-aluminum nitride-graphene device concept presents a promising technology platform for terahertz- to- optical devices as well as radio-frequency acoustic devices where piezoelectricity in aluminum nitride can also be exploited
Self-supporting graphene films and their applications
The self-supporting monolayer material which is graphene has excited enormous interest over the ten years since its discovery due to its remarkable electrical, mechanical thermal and chemical properties. In this paper we describe our work to develop chemical vapour deposition methods to grow monolayer graphene on copper foil substrates and the subsequent transfer process. Raman microscopy, scanning electron microscopy and atomic force microscopy (AFM) are used to examine the quality of the transferred material. To demonstrate the process we describe transfer onto patterned SiO2/Si substrates which forms freely suspended graphene with focus on circular wells forming graphene drums. These show interesting mechanical properties which are being explored as nanomechanical resonators.UK NMS Programme, the EU EMRP (European Metrology Research Programme) projects MetNEMS and GraphOh
Enhancing structural properties and performance of graphene-based devices using self-assembled HMDS monolayers
The performance of graphene devices is often limited by defects and impurities induced during device fabrication. Polymer residue left on the surface of graphene after photoresist processing can increase electron scattering and hinder electron transport. Furthermore, exposing graphene to plasma-based processing such as sputtering of metallization layers can increase the defect density in graphene and alter the device performance. Therefore, the preservation of the high-quality surface of graphene during thin-film deposition and device manufacturing is essential for many electronic applications. Here, we show that the use of self-assembled monolayers (SAMs) of hexamethyldisilazane (HMDS) as a buffer layer during the device fabrication of graphene can significantly reduce damage, improve the quality of graphene, and enhance device performance. The role of HMDS has been systematically investigated using surface analysis techniques and electrical measurements. The benefits of HMDS treatment include a significant reduction in defect density compared with as-treated graphene and more than a 2-fold reduction of contact resistance. This surface treatment is simple and offers a practical route for improving graphene device interfaces, which is important for the integration of graphene into functional devices such as electronics and sensor devices
Contact-free sheet resistance determination of large area graphene layers by an open dielectric loaded microwave cavity
Carbon-dot-enhanced graphene field-effect transistors for uitrasensitive detection of exosomes
Graphene field-effect transistors (GFETs) are suitable building blocks for high-performance electrical biosensors, because graphene inherently exhibits a strong response to charged biomolecules on its surface. However, achieving ultralow limit-of-detection (LoD) is limited by sensor response time and screening effect. Herein, we demonstrate that the detection limit of GFET biosensors can be improved significantly by decorating the uncovered graphene sensor area with carbon dots (CDs). The developed CDs-GFET biosensors used for exosome detection exhibited higher sensitivity, faster response, and three orders of magnitude improvements in the LoD compared with nondecorated GFET biosensors. A LoD down to 100 particles/μL was achieved with CDs-GFET sensor for exosome detection with the capability for further improvements. The results were further supported by atomic force microscopy (AFM) and fluorescent microscopy measurements. The high-performance CDs-GFET biosensors will aid the development of an ultrahigh sensitivity biosensing platform based on graphene for rapid and early diagnosis of diseases