TADF Material Design: Photophysical Background and Case Studies Focusing on CuI and AgI Complexes

The development of organic light emitting diodes (OLEDs) and the use of emitting molecules have strongly stimulated scientific research of emitting compounds. In particular, for OLEDs it is required to harvest all singlet and triplet excitons that are generated in the emission layer. This can be achieved using the so-called triplet harvesting mechanism. However, the materials to be applied are based on high-cost rare metals and therefore, it has been proposed already more than one decade ago by our group to use the effect of thermally activated delayed fluorescence (TADF) to harvest all generated excitons in the lowest excited singlet state S1. In this situation, the resulting emission is an S1→S0 fluorescence, though a delayed one. Hence, this mechanism represents the singlet harvesting mechanism. Using this effect, high-cost and strong SOC-carrying rare metals are not required. This mechanism can very effectively be realized by use of CuI or AgI complexes and even by purely organic molecules. In this investigation, we focus on photoluminescence properties and on crucial requirements for designing CuI and AgI materials that exhibit short TADF decay times at high emission quantum yields. The decay times should be as short as possible to minimize non-radiative quenching and, in particular, chemical reactions that frequently occur in the excited state. Thus, a short TADF decay time can strongly increase the material's long-term stability. Here, we study crucial parameters and analyze their impact on the TADF decay time. For example, the energy separation ΔE(S1–T1) between the lowest excited singlet state S1 and the triplet state T1 should be small. Accordingly, we present detailed photophysical properties of two case-study materials designed to exhibit a large ΔE(S1–T1) value of 1000 cm−1 (120 meV) and, for comparison, a small one of 370 cm−1 (46 meV). From these studies—extended by investigations of many other CuI TADF compounds—we can conclude that just small ΔE(S1–T1) is not a sufficient requirement for short TADF decay times. High allowedness of the transition from the emitting S1 state to the electronic ground state S0, expressed by the radiative rate kr(S1→S0) or the oscillator strength f(S1→S0), is also very important. However, mostly small ΔE(S1–T1) is related to small kr(S1→S0). This relation results from an experimental investigation of a large number of CuI complexes and basic quantum mechanical considerations. As a consequence, a reduction of τ(TADF) to below a few μs might be problematic. However, new materials can be designed for which this disadvantage is not prevailing. A new TADF compound, Ag(dbp)(P2-nCB) (with dbp=2,9-di-n-butyl-1,10-phenanthroline and P2-nCB=bis-(diphenylphosphine)-nido-carborane) seems to represent such an example. Accordingly, this material shows TADF record properties, such as short TADF decay time at high emission quantum yield. These properties are based (i) on geometry optimizations of the AgI complex for a fast radiative S1→S0 rate and (ii) on restricting the extent of geometry reorganizations after excitation for reducing non-radiative relaxation and emission quenching. Indeed, we could design a TADF material with breakthrough properties showing τ(TADF)=1.4 μs at 100 % emission quantum yield. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinhei

Relation between composition and fracture strength in off-stoichiometric metal silicide free-standing membranes

In this work, we investigated the influence of composition on the polycrystalline structure, elastic properties and fracture strength, of ZrxSi1-x, NbxSi1-x, and MoxSi1-x free-standing thin films that were deposited by magnetron sputtering and subsequently annealed at 500 °C. Despite deviations from the stoichiometric composition, the crystalline structure of all films, except for the most Zr-rich ZrxSi1-x, corresponded to their respective stoichiometric disilicide structures, without the formation of a second-phase. Off-stoichiometry was found to be accompanied by the presence of lattice defects and a decrease of the grain size, which bring about a lower tensile stress in the films. The dependence of the fracture strength on the composition was remarkably similar for the three silicides, with the lowest and highest strength values occurring for samples with 30% and 37–40% of metal content, respectively. The observed dependence of strength on composition was attributed to the combination of the Hall-Petch effect, changes in the morphology and strength of grain boundaries, and the enhancement of crystal plasticity due to lattice defects induced by off-stoichiometry

Atomically Defined Monocarborane Copper(I) Acetylides with Structural and Luminescence Properties Tuned by Ligand Sterics

The weakly coordinating cluster [CB11H12]− is used as a versatile building block for the preparation of luminescent copper(I) complexes. Treatment of [CB11H11‐12‐C≡CH]− with CuI and ammonia affords {(CB11H11‐12‐C≡C)2Cu4(NH3)3}n (2). Addition of selected phosphine and pyridine ligands transforms 2 to a range of homometallic products 3–13. All compounds have been characterized by X‐ray crystallography, which reveals a surprising variety of structural complexity featuring cores with two to ten Cu+ centers. In the solid state, products 3–13 exhibit room‐temperature phosphorescence across the visible spectrum in colors from blue to deep red. Lifetimes at room temperature are in the microsecond regime, and quantum yields of up to Φ=0.99 are observed