3 research outputs found

    Двухслойная модСль ΠΎΡ‚Ρ€Π°ΠΆΠ°ΡŽΡ‰ΠΈΡ… Ρ„Π΅Ρ€Ρ€ΠΎΠΌΠ°Π³Π½ΠΈΡ‚Π½Ρ‹Ρ… ΠΏΠ»Π΅Π½ΠΎΠΊ для исслСдования Ρ‚ΠΎΠ½ΠΊΠΈΡ… ΠΏΠ»Π΅Π½ΠΎΠΊ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ магнитоэллипсомСтрии

    No full text
    An approach to analysis of magneto-optical ellipsometry measurements is presented. A two-layer model of ferromagnetic reflective films is in focus. The obtained algorithm can be used to control optical and magneto-optical properties during films growth inside vacuum chambersΠŸΡ€Π΅Π΄ΡΡ‚Π°Π²Π»Π΅Π½ ΠΌΠ΅Ρ‚ΠΎΠ΄ Π°Π½Π°Π»ΠΈΠ·Π° ΠΌΠ°Π³Π½ΠΈΡ‚ΠΎ-эллипсомСтричСских ΠΈΠ·ΠΌΠ΅Ρ€Π΅Π½ΠΈΠΉ. Π”Π΅Ρ‚Π°Π»ΡŒΠ½ΠΎ рассматрива- Стся двуслойная модСль Ρ„Π΅Ρ€Ρ€ΠΎΠΌΠ°Π³Π½ΠΈΡ‚Π½Ρ‹Ρ… ΠΎΡ‚Ρ€Π°ΠΆΠ°ΡŽΡ‰ΠΈΡ… ΠΏΠ»Π΅Π½ΠΎΠΊ. ΠŸΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹ΠΉ Π°Π»Π³ΠΎΡ€ΠΈΡ‚ΠΌ ΠΌΠΎΠΆΠ΅Ρ‚ ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΠΎΠ²Π°Ρ‚ΡŒΡΡ для контроля оптичСских ΠΈ ΠΌΠ°Π³Π½ΠΈΡ‚ΠΎ-оптичСских свойств ΠΏΠ»Π΅Π½ΠΎΠΊ Π² процСссС ΠΈΡ… роста Π² Π²Π°ΠΊΡƒΡƒΠΌΠ½Ρ‹Ρ… ΠΊΠ°ΠΌΠ΅Ρ€Π°

    Двухслойная модСль ΠΎΡ‚Ρ€Π°ΠΆΠ°ΡŽΡ‰ΠΈΡ… Ρ„Π΅Ρ€Ρ€ΠΎΠΌΠ°Π³Π½ΠΈΡ‚Π½Ρ‹Ρ… ΠΏΠ»Π΅Π½ΠΎΠΊ для исслСдования Ρ‚ΠΎΠ½ΠΊΠΈΡ… ΠΏΠ»Π΅Π½ΠΎΠΊ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ магнитоэллипсомСтрии

    No full text
    An approach to analysis of magneto-optical ellipsometry measurements is presented. A two-layer model of ferromagnetic reflective films is in focus. The obtained algorithm can be used to control optical and magneto-optical properties during films growth inside vacuum chambersΠŸΡ€Π΅Π΄ΡΡ‚Π°Π²Π»Π΅Π½ ΠΌΠ΅Ρ‚ΠΎΠ΄ Π°Π½Π°Π»ΠΈΠ·Π° ΠΌΠ°Π³Π½ΠΈΡ‚ΠΎ-эллипсомСтричСских ΠΈΠ·ΠΌΠ΅Ρ€Π΅Π½ΠΈΠΉ. Π”Π΅Ρ‚Π°Π»ΡŒΠ½ΠΎ рассматрива- Стся двуслойная модСль Ρ„Π΅Ρ€Ρ€ΠΎΠΌΠ°Π³Π½ΠΈΡ‚Π½Ρ‹Ρ… ΠΎΡ‚Ρ€Π°ΠΆΠ°ΡŽΡ‰ΠΈΡ… ΠΏΠ»Π΅Π½ΠΎΠΊ. ΠŸΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹ΠΉ Π°Π»Π³ΠΎΡ€ΠΈΡ‚ΠΌ ΠΌΠΎΠΆΠ΅Ρ‚ ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΠΎΠ²Π°Ρ‚ΡŒΡΡ для контроля оптичСских ΠΈ ΠΌΠ°Π³Π½ΠΈΡ‚ΠΎ-оптичСских свойств ΠΏΠ»Π΅Π½ΠΎΠΊ Π² процСссС ΠΈΡ… роста Π² Π²Π°ΠΊΡƒΡƒΠΌΠ½Ρ‹Ρ… ΠΊΠ°ΠΌΠ΅Ρ€Π°

    Growth Process, Structure and Electronic Properties of Cr<sub>2</sub>GeC and Cr<sub>2-x</sub>Mn<sub>x</sub>GeC Thin Films Prepared by Magnetron Sputtering

    No full text
    The growth and phase formation features, along with the influence of structure and morphology on the electronic, optical, and transport properties of Cr2GeC and Cr2-xMnxGeC MAX phase thin films synthesized by magnetron sputtering technique, were studied. It was found that the Cr:Ge:C atomic ratios most likely play the main role in the formation of a thin film of the MAX phase. A slight excess of carbon and manganese doping significantly improved the phase composition of the films. Cr2GeC films with a thicknesses exceeding 40 nm consisted of crystallites with well-developed facets, exhibiting metallic optical and transport properties. The hopping conduction observed in the Cr2-xMnxGeC film could be attributed to the columnar form of crystallites. Calculations based on a two-band model indicated high carrier concentrations N, P and mobility ΞΌ in the best-synthesized Cr2GeC film, suggesting transport properties close to single crystal material. The findings of this study can be utilized to enhance the growth technology of MAX phase thin films
    corecore