3 research outputs found
ΠΠ²ΡΡ ΡΠ»ΠΎΠΉΠ½Π°Ρ ΠΌΠΎΠ΄Π΅Π»Ρ ΠΎΡΡΠ°ΠΆΠ°ΡΡΠΈΡ ΡΠ΅ΡΡΠΎΠΌΠ°Π³Π½ΠΈΡΠ½ΡΡ ΠΏΠ»Π΅Π½ΠΎΠΊ Π΄Π»Ρ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΡΠΎΠ½ΠΊΠΈΡ ΠΏΠ»Π΅Π½ΠΎΠΊ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΌΠ°Π³Π½ΠΈΡΠΎΡΠ»Π»ΠΈΠΏΡΠΎΠΌΠ΅ΡΡΠΈΠΈ
An approach to analysis of magneto-optical ellipsometry measurements is presented. A two-layer model
of ferromagnetic reflective films is in focus. The obtained algorithm can be used to control optical and
magneto-optical properties during films growth inside vacuum chambersΠΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½ ΠΌΠ΅ΡΠΎΠ΄ Π°Π½Π°Π»ΠΈΠ·Π° ΠΌΠ°Π³Π½ΠΈΡΠΎ-ΡΠ»Π»ΠΈΠΏΡΠΎΠΌΠ΅ΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΠΉ. ΠΠ΅ΡΠ°Π»ΡΠ½ΠΎ ΡΠ°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°-
Π΅ΡΡΡ Π΄Π²ΡΡΠ»ΠΎΠΉΠ½Π°Ρ ΠΌΠΎΠ΄Π΅Π»Ρ ΡΠ΅ΡΡΠΎΠΌΠ°Π³Π½ΠΈΡΠ½ΡΡ
ΠΎΡΡΠ°ΠΆΠ°ΡΡΠΈΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ. ΠΠΎΠ»ΡΡΠ΅Π½Π½ΡΠΉ Π°Π»Π³ΠΎΡΠΈΡΠΌ ΠΌΠΎΠΆΠ΅Ρ
ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°ΡΡΡΡ Π΄Π»Ρ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈ ΠΌΠ°Π³Π½ΠΈΡΠΎ-ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ²ΠΎΠΉΡΡΠ² ΠΏΠ»Π΅Π½ΠΎΠΊ Π² ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΠΈΡ
ΡΠΎΡΡΠ° Π² Π²Π°ΠΊΡΡΠΌΠ½ΡΡ
ΠΊΠ°ΠΌΠ΅ΡΠ°
ΠΠ²ΡΡ ΡΠ»ΠΎΠΉΠ½Π°Ρ ΠΌΠΎΠ΄Π΅Π»Ρ ΠΎΡΡΠ°ΠΆΠ°ΡΡΠΈΡ ΡΠ΅ΡΡΠΎΠΌΠ°Π³Π½ΠΈΡΠ½ΡΡ ΠΏΠ»Π΅Π½ΠΎΠΊ Π΄Π»Ρ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΡΠΎΠ½ΠΊΠΈΡ ΠΏΠ»Π΅Π½ΠΎΠΊ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΌΠ°Π³Π½ΠΈΡΠΎΡΠ»Π»ΠΈΠΏΡΠΎΠΌΠ΅ΡΡΠΈΠΈ
An approach to analysis of magneto-optical ellipsometry measurements is presented. A two-layer model
of ferromagnetic reflective films is in focus. The obtained algorithm can be used to control optical and
magneto-optical properties during films growth inside vacuum chambersΠΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½ ΠΌΠ΅ΡΠΎΠ΄ Π°Π½Π°Π»ΠΈΠ·Π° ΠΌΠ°Π³Π½ΠΈΡΠΎ-ΡΠ»Π»ΠΈΠΏΡΠΎΠΌΠ΅ΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΠΉ. ΠΠ΅ΡΠ°Π»ΡΠ½ΠΎ ΡΠ°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°-
Π΅ΡΡΡ Π΄Π²ΡΡΠ»ΠΎΠΉΠ½Π°Ρ ΠΌΠΎΠ΄Π΅Π»Ρ ΡΠ΅ΡΡΠΎΠΌΠ°Π³Π½ΠΈΡΠ½ΡΡ
ΠΎΡΡΠ°ΠΆΠ°ΡΡΠΈΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ. ΠΠΎΠ»ΡΡΠ΅Π½Π½ΡΠΉ Π°Π»Π³ΠΎΡΠΈΡΠΌ ΠΌΠΎΠΆΠ΅Ρ
ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°ΡΡΡΡ Π΄Π»Ρ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈ ΠΌΠ°Π³Π½ΠΈΡΠΎ-ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ²ΠΎΠΉΡΡΠ² ΠΏΠ»Π΅Π½ΠΎΠΊ Π² ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΠΈΡ
ΡΠΎΡΡΠ° Π² Π²Π°ΠΊΡΡΠΌΠ½ΡΡ
ΠΊΠ°ΠΌΠ΅ΡΠ°
Growth Process, Structure and Electronic Properties of Cr<sub>2</sub>GeC and Cr<sub>2-x</sub>Mn<sub>x</sub>GeC Thin Films Prepared by Magnetron Sputtering
The growth and phase formation features, along with the influence of structure and morphology on the electronic, optical, and transport properties of Cr2GeC and Cr2-xMnxGeC MAX phase thin films synthesized by magnetron sputtering technique, were studied. It was found that the Cr:Ge:C atomic ratios most likely play the main role in the formation of a thin film of the MAX phase. A slight excess of carbon and manganese doping significantly improved the phase composition of the films. Cr2GeC films with a thicknesses exceeding 40 nm consisted of crystallites with well-developed facets, exhibiting metallic optical and transport properties. The hopping conduction observed in the Cr2-xMnxGeC film could be attributed to the columnar form of crystallites. Calculations based on a two-band model indicated high carrier concentrations N, P and mobility ΞΌ in the best-synthesized Cr2GeC film, suggesting transport properties close to single crystal material. The findings of this study can be utilized to enhance the growth technology of MAX phase thin films