On the formation of blisters in annealed hydrogenated a-Si layers

Differently hydrogenated radio frequency-sputtered a-Si layers have been studied by infrared (IR) spectroscopy as a function of the annealing time at 350 Celsius with the aim to get a deeper understanding of the origin of blisters previously observed by us in a-Si/a-Ge multilayers prepared under the same conditions as the ones applied to the present a-Si layers. The H content varied between 10.8 and 17.6 at.% as measured by elastic recoil detection analysis. IR spectroscopy showed that the concentration of the clustered (Si-H)n groups and of the (Si-H2)n (n ≥ 1) polymers increased at the expense of the Si-H mono-hydrides with increasing annealing time, suggesting that there is a corresponding increase of the volume of micro-voids whose walls are assumed from literature to be decorated by the clustered mono-hydride groups and polymers. At the same time, an increase in the size of surface blisters was observed. Also, with increasing annealing time, the total concentration of bonded H of any type decreases, indicating that H is partially released from its bonds to Si. It is argued that the H released from the (Si-H)n complexes and polymers at the microvoid surfaces form molecular H2 inside the voids, whose size increases upon annealing because of the thermal expansion of the H2 gas, eventually producing plastic surface deformation in the shape of blisters

Fénnyel manipulált összefonódott atomi állapotok és kvantumos kapuk = Quantum gates and entagled atomic states manipulated by light

1. Óriás spinű molekulák (nanomágnesek) állapotának időben változó mezővel való kölcsönhatásában megmutattuk, hogyan lehet ezeket egy kívánt spinállapotba hozni. A dekoherencia figyelembevételével magyarázatot adtunk a kísérleti hiszterézisgörbék alakjára és üregbe zárt nanomágnesek esetén a mézerszerű működésre. 2. Félvezető gyűrűben mozgó elektron spinjére alapozva egyqubites kvantumkapuk megvalósítását javasoltuk. Egy, vagy néhány gyűrűvel a Stern-Gerlach kísérlet spintronikai változatának elvét dolgoztuk ki. Az eszközzel a térbeli és a spin szabadsági fokok között összefonódás hozható létre. A szennyezések és a véges hőmérséklet miatti dekoherencia hatására számos gyűrűből álló hálózat esetén a méret növekedésével egy ilyen rendszer távolabb kerül az ideális viselkedéstől, de a kiaknázható kvantumos tulajdonságok nem az alkotóelemek számával arányosan, hanem annál lassabban tűnnek el. Periodikusan változó spin-pálya kölcsönhatás esetén a gyűrűben a spin Rabi oszcillációja lép fel, ami véges hőmérsékleten és véletlen szórási folyamatok jelenlétében is megmarad. Az oszcilláló spin-pálya kölcsönhatás a Raman szóráshoz hasonló stokesi és anti-stokesi csúcsokat hoz létre a vezetőképességben. 3. Megmutattuk, hogy N qubitből, illetve általánosabban K dimenziós részekből álló kvantumrendszer szimmetrikus alterében a nem összefonódott állapotok pontosan megegyeznek a koherens állapotokkal, és a szimmetrikus altérre ortogonális állapotok mindegyike összefonódott. | 1. We have shown how giant spin molecules (nanomagnets) can be brought into specific quantum states with time varying magnetic fields . We explained the experimentally observed hysteresis curves and a maser-like operation for molecules in a cavity as caused by decoherence. 2. We proposed how to realize one-qubit quantum gates based on the electron spin in a semiconductor ring. Applying one or few such rings the spintronic analogue of the Stern-Gerlach experiment can be realized, and the device can entangle the spatial and spin degrees of freedom. Increasing the size of networks consisting of such rings decoherence caused by impurities and by finite temperature reduces the ideal properties of the system, but the quantum features to be exploited diminish promisingly slow. A periodic change of the strength of the spin-orbit interaction leads to Rabi oscillations of the spin, which persists also at finite temperatures and in the presence of random scattering events. The oscillating spin-orbit interaction creates Raman type Stokes and anti-Stokes peaks in the conductivity. 3. In an N qubit system, or more generally in an N-partite system consisting of K dimensional parts, the class of nonentangled states in the symmetric subspace is identical with the class of the coherent states. The subspace orthogonal to the symmetric one contains only entangled states

Nanopattern formation in UV laser treated a-AlOx and nc-Al/AlOx layers

Hexagonal nanopatterns were fabricated in sputter deposited Al-oxide thin films by means of single UV laser pulses via a layer of self-assembled silica nanospheres. The hexagonal pattern was projected to the surface due to the focussing effect of the silica nanolenses enhancing the local impact of the pulse. As a result of the laser pulse large area ordered structure of nano-pits were formed in RF sputtered amorphous Al-oxide films, while nano-craters were created in DC sputter deposited layers that consist of Al nanocrystals embedded in amorphous matrix. The two different mechanisms governing the nanostructure formation in the a-AlOx and nc-Al/AlOx composite layers were revealed by Atomic Force Microscopy (AFM), cross-sectional Transmission Electron Microscopy (XTEM), spectroscopic ellipsometry and computer simulation

Refractive Index Variation of Magnetron-Sputtered a-Si1−xGex by “One-Sample Concept” Combinatory

Gradient a-Si1−xGex layers have been deposited by ”one-sample concept” combinatorial direct current (DC) magnetron sputtering onto one-inch-long Si slabs. Characterizations by electron microscopy, ion beam analysis and ellipsometry show that the layers are amorphous with a uniform thickness, small roughness and compositions from x = 0 to x = 1 changing linearly with the lateral position. By focused-beam mapping ellipsometry, we show that the optical constants also vary linearly with the lateral position, implying that the optical constants are linear functions of the composition. Both the refractive index and the extinction coefficient can be varied in a broad range for a large spectral region. The precise control and the knowledge of layer properties as a function of composition is of primary importance in many applications from solar cells to sensors