Identification and Phylogenetic Analysis of Chitin Synthase Genes from the Deep-Sea Polychaete Branchipolynoe onnuriensis Genome

Chitin, one of the most abundant biopolymers in nature, is a crucial material that provides sufficient rigidity to the exoskeleton. In addition, chitin is a valuable substance in both the medical and industrial fields. The synthesis of chitin is catalyzed by chitin synthase (CHS) enzymes. Although the chitin synthesis pathway is highly conserved from fungi to invertebrates, CHSs have mostly only been investigated in insects and crustaceans. Especially, little is known about annelids from hydrothermal vents. To understand chitin synthesis from the evolutionary view in a deep-sea environment, we first generated the whole-genome sequencing of the parasitic polychaete Branchipolynoe onnuriensis. We identified seven putative CHS genes (BonCHS1-BonCHS7) by domain searches and phylogenetic analyses. This study showed that most crustaceans have only a single copy or two gene copies, whereas at least two independent gene duplication events occur in B. onnuriensis. This is the first study of CHS obtained from a parasitic species inhabiting a hydrothermal vent and will provide insight into various organisms’ adaptation to the deep-sea hosts

Identification and Phylogenetic Analysis of Chitin Synthase Genes from the Deep-Sea Polychaete <i>Branchipolynoe onnuriensis</i> Genome

Chitin, one of the most abundant biopolymers in nature, is a crucial material that provides sufficient rigidity to the exoskeleton. In addition, chitin is a valuable substance in both the medical and industrial fields. The synthesis of chitin is catalyzed by chitin synthase (CHS) enzymes. Although the chitin synthesis pathway is highly conserved from fungi to invertebrates, CHSs have mostly only been investigated in insects and crustaceans. Especially, little is known about annelids from hydrothermal vents. To understand chitin synthesis from the evolutionary view in a deep-sea environment, we first generated the whole-genome sequencing of the parasitic polychaete Branchipolynoe onnuriensis. We identified seven putative CHS genes (BonCHS1-BonCHS7) by domain searches and phylogenetic analyses. This study showed that most crustaceans have only a single copy or two gene copies, whereas at least two independent gene duplication events occur in B. onnuriensis. This is the first study of CHS obtained from a parasitic species inhabiting a hydrothermal vent and will provide insight into various organisms’ adaptation to the deep-sea hosts

Large in-plane deformation of RuO6 octahedron and ferromagnetism of bulk SrRuO3

SrRuO3 is a ferromagnetic metal with several unusual physical properties such as zero thermal expansion below T-c, so-called Invar behavior. Another anomalous feature is that the a-axis lattice constant is larger than the b-axis lattice constant, a clear deviation from the predictions of the Glazer structural description with rigid RuO6 octahedron motion. Using high resolution neutron diffraction techniques, we show how these two structural anomalies arise from the irregular in-plane deformation, i.e. plastic behavior of the RuO6 octahedron, a weak band Jahn-Teller distortion. We further demonstrate that the ferromagnetic instability of SrRuO3 is related to the temperature-induced localization of Ru 4d bands.114121sciescopu

Coupling Two-Dimensional MoTe₂ and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters

We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe₂ and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ∼3 × 10⁴. Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet–oxide film hybrid CMOS inverter exhibits voltage gains as high as ∼40 at 5 V, low power consumption less than around a few nW at 1 V, and ∼200 μs switching dynamics

Ferroelastic–Ferroelectric Multiferroicity in van der Waals Rhenium Dichalcogenides

© 2022 Wiley-VCH GmbH.2D multiferroics with combined ferroic orders have gained attention owing to their novel functionality and underlying science. Intrinsic ferroelastic–ferroelectric multiferroicity in single-crystalline van der Waals rhenium dichalcogenides, whose symmetries are broken by the Peierls distortion and layer-stacking order, is demonstrated. Ferroelastic switching of the domain orientation and accompanying anisotropic properties is achieved with 1% uniaxial strain using the polymer encapsulation method. Based on the electron localization function and bond dissociation energy of the Re–Re bonds, the change in bond configuration during the evolution of the domain wall and the preferred switching between the two specific orientation states are explained. Furthermore, the ferroelastic switching of ferroelectric polarization is confirmed using the photovoltaic effect. The study provides insights into the reversible bond-switching process and potential applications based on 2D multiferroicity.11Nsciescopu

Low Power Consumption Complementary Inverters with n‑MoS₂ and p‑WSe₂ Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits

Two-dimensional (2D) semiconductor materials with discrete bandgap become important because of their interesting physical properties and potentials toward future nanoscale electronics. Many 2D-based field effect transistors (FETs) have thus been reported. Several attempts to fabricate 2D complementary (CMOS) logic inverters have been made too. However, those CMOS devices seldom showed the most important advantage of typical CMOS: low power consumption. Here, we adopted p-WSe₂ and n-MoS₂ nanosheets separately for the channels of bottom-gate-patterned FETs, to fabricate 2D dichalcogenide-based hetero-CMOS inverters on the same glass substrate. Our hetero-CMOS inverters with electrically isolated FETs demonstrate novel and superior device performances of a maximum voltage gain as ∼27, sub-nanowatt power consumption, almost ideal noise margin approaching 0.5<i>V</i>_DD (supply voltage, <i>V</i>_DD = 5 V) with a transition voltage of 2.3 V, and ∼800 μs for switching delay. Moreover, our glass-substrate CMOS device nicely performed digital logic (NOT, OR, and AND) and push–pull circuits for organic light-emitting diode switching, directly displaying the prospective of practical applications