Unconventional scanning tunneling conductance spectra for graphene

We compute the tunneling conductance of graphene as measured by a scanning tunneling microscope (STM) with a normal/superconducting tip. We demonstrate that for undoped graphene with zero Fermi energy, the first derivative of the tunneling conductance with respect to the applied voltage is proportional to the density of states of the STM tip. We also show that the shape of the STM spectra for graphene doped with impurities depends qualitatively on the position of the impurity atom in the graphene matrix and relate this unconventional phenomenon to the pseudopsin symmetry of the Dirac quasiparticles in graphene. We suggest experiments to test our theory.Comment: 6 pages, 3 figure

Magnetotransport of Dirac Fermions on the surface of a topological insulator

We study the properties of Dirac fermions on the surface of a topological insulator in the presence of crossed electric and magnetic fields. We provide an exact solution to this problem and demonstrate that, in contrast to their counterparts in graphene, these Dirac fermions allow relative tuning of the orbital and Zeeman effects of an applied magnetic field by a crossed electric field along the surface. We also elaborate and extend our earlier results on normal metal-magnetic film-normal metal (NMN) and normal metal-barrier-magnetic film (NBM) junctions of topological insulators [Phys. Rev. Lett. {\bf 104}, 046403 (2010)]. For NMN junctions, we show that for Dirac fermions with Fermi velocity $v_F$, the transport can be controlled using the exchange field ${\mathcal J}$ of a ferromagnetic film over a region of width $d$. The conductance of such a junction changes from oscillatory to a monotonically decreasing function of $d$ beyond a critical ${\mathcal J}$ which leads to the possible realization of magnetic switches using these junctions. For NBM junctions with a potential barrier of width $d$ and potential $V_0$, we find that beyond a critical ${\mathcal J}$, the criteria of conductance maxima changes from $\chi= e V_0 d/\hbar v_F = n \pi$ to $\chi= (n+1/2)\pi$ for integer $n$. Finally, we compute the subgap tunneling conductance of a normal metal-magnetic film-superconductor (NMS) junctions on the surface of a topological insulator and show that the position of the peaks of the zero-bias tunneling conductance can be tuned using the magnetization of the ferromagnetic film. We point out that these phenomena have no analogs in either conventional two-dimensional materials or Dirac electrons in graphene and suggest experiments to test our theory.Comment: 11 pages, 12 figures; v

Tuning the conductance of Dirac fermions on the surface of a topological insulator

We study the transport properties of the Dirac fermions with Fermi velocity $v_F$ on the surface of a topological insulator across a ferromagnetic strip providing an exchange field ${\mathcal J}$ over a region of width $d$. We show that the conductance of such a junction changes from oscillatory to a monotonically decreasing function of $d$ beyond a critical ${\mathcal J}$. This leads to the possible realization of a magnetic switch using these junctions. We also study the conductance of these Dirac fermions across a potential barrier of width $d$ and potential $V_0$ in the presence of such a ferromagnetic strip and show that beyond a critical ${\mathcal J}$, the criteria of conductance maxima changes from $\chi= e V_0 d/\hbar v_F = n \pi$ to $\chi= (n+1/2)\pi$ for integer $n$. We point out that these novel phenomena have no analogs in graphene and suggest experiments which can probe them.Comment: v1 4 pages 5 fig

Topological Confinement and Superconductivity

We derive a Kondo Lattice model with a correlated conduction band from a two-band Hubbard Hamiltonian. This mapping allows us to describe the emergence of a robust pairing mechanism in a model that only contains repulsive interactions. The mechanism is due to topological confinement and results from the interplay between antiferromagnetism and delocalization. By using Density-Matrix-Renormalization-Group (DMRG), we demonstrate that this mechanism leads to dominant superconducting correlations in a 1D-system.Comment: 4 pages, 4 figure

Langevin Dynamics simulations of a 2-dimensional colloidal crystal under confinement and shear

Langevin Dynamics simulations are used to study the effect of shear on a two-dimensional colloidal crystal confined by structured parallel walls. When walls are sheared very slowly, only two or three crystalline layers next to the walls move along with them, while the inner layers of the crystal are only slightly tilted. At higher shear velocities, this inner part of the crystal breaks into several pieces with different orientations. The velocity profile across the slit is reminiscent of shear-banding in flowing soft materials, where liquid and solid regions coexist; the difference, however, is that in the latter case the solid regions are glassy while here they are crystalline. At even higher shear velocities, the effect of the shearing becomes smaller again. Also the effective temperature near the walls (deduced from the velocity distributions of the particles) decreases again when the wall velocity gets very large. When the walls are placed closer together, thereby introducing a misfit, a structure containing a soliton staircase arises in simulations without shear. Introducing shear increases the disorder in these systems until no solitons are visible any more. Instead, similar structures like in the case without misfit result. At high shear rates, configurations where the incommensurability of the crystalline structure is compensated by the creation of holes become relevant

Soft Breakdown of Zener Diode

Zener diodes are found to show breakdown properties at much lower bias voltages compared to the so called Zener breakdown voltages. The soft breakdown becomes conspicuous from the occurrence of a point of inflexion near the origin of the I-V characteristics. The phenomenon has been explained by interband tunneling of carriers taking place under small reverse bias voltages

Heavy Fermion superconductor CeCu2_2Si2_2 under high pressure: multiprobing the valence crossover

The first heavy fermion superconductor CeCu$_2$Si$_2$ has not revealed all its striking mysteries yet. At high pressures, superconductivity is supposed to be mediated by valence fluctuations, in contrast to ambient pressure, where spin fluctuations most likely act as pairing glue. We have carried out a multiprobe (electric transport, thermopower, ac specific heat, Hall and Nernst effects) experiment up to $7 \text{GPa}$ on a high quality CeCu$_2$Si$_2$ single crystal. Reliable resistivity data reveal for the first time a scaling behavior close to the supposed valence transition, and allow to locate the critical end point at $4.5\pm0.2 \text{GPa}$ and a slightly negative temperature. In the same pressure region, remarkable features have also been detected in the other physical properties, acting as further signatures of the Ce valence crossover and the associated critical fluctuations.Comment: 13 pages, 14 figure