Ordering kinetic in two-dimensional hexagonal pattern of cylinder-forming PS-b-PMMA block copolymer thin films: dependence on the segregation strength

This paper reports the experimental determination of the growth exponents and activation enthalpies for the ordering process of standing cylinder-forming all-organic polystyrene-block-poly (methyl methacrylate) (PS-b-PMMA) block copolymer (BCP) thin films as a function of the BCP degree of polymerization (N). The maximum growth exponent of 1/3 is observed for the smallest BCP at the border of the order disorder transition. Both the growth exponents and the activation enthalpies exponentially decrease with the BCP segregation strength (chi N) following the same path of the diffusivity.Comment: 17 pages, 3 figures, 1 table, 7 pages (18-24) Supplemental Material (SM

Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

An effective doping technology for precise control of P atom injection and activation into a semiconductor substrate is presented

Ultrathin random copolymer-grafted layers for block copolymer self-assembly

Hydroxyl-terminated P(S-r-MMA) random copolymers (RCPs) with molecular weights (Mn) from 1700 to 69000 and a styrene unit fraction of approximately 61% were grafted onto a silicon oxide surface and subsequently used to study the orientation of nanodomains with respect to the substrate, in cylinder-forming PS-b-PMMA block copolymer (BCP) thin films. When the thickness (H) of the grafted layer is greater than 5-6 nm, a perpendicular orientation is always observed because of the efficient decoupling of the BCP film from the polar SiO2 surface. Conversely, if H is less than 5 nm, the critical thickness of the grafted layer, which allows the neutralization of the substrate and promotion of the perpendicular orientation of the nanodomains in the BCP film, is found to depend on the Mn of the RCP. In particular, when Mn = 1700, a 2.0 nm thick grafted layer is sufficient to promote the perpendicular orientation of the PMMA cylinders in the PS-b-PMMA BCP film. A proximity shielding mechanism of the BCP molecules from the polar substrate surface, driven by chain stretching of the grafted RCP molecules, is proposed

Silicon crystallization in nanodot arrays organized by block copolymer lithography

cited By 2International audienceAsymmetric polystyrene-b-polymethylmethacrylate (PS-b-PMMA) block copolymers are used to fabricate nanoporous PS templates with different pore diameter depending on the specific substrate neutralization protocol. The resulting polymeric templates are used as masks for the subsequent deposition of a thin (h = 5 nm) amorphous Si layer by electron beam evaporation. After removal of the polymeric film and of the silicon excess, well-defined hexagonally packed amorphous Si nanodots are formed on the substrate. Their average diameter (d < 20 nm), density (1.2 × 1011 cm−2), and lateral distribution closely mimic the original nanoporous template. Upon capping with SiO2 and high temperature annealing (1050 °C, N2), each amorphous Si nanodot rearranges in agglomerates of Si nanocrystals (d < 4 nm). The average diameter and shape of these Si nanocrystals strongly depend on the size of the initial Si nanodot