Conformational molecular switch of the azobenzene molecule: A scanning tunneling microscopy study

We propose to utilize azobenzene as a nanomolecular switch which can be triggered by transmitting electrons above threshold biases. The effect is explained by an electron impact trans-cis conformational change of the isolated azobenzene molecules. The molecular electronic states of both isomers have been measured with spatially resolved scanning tunneling microscopy or spectroscopy, leading to suggested transition pathways of the electron-induced isomerization.open21716

Local electronic density of states of a semiconducting carbon nanotube interface

The local electronic structure of semiconducting single-wall carbon nanotubes was studied with scanning tunneling microscopy. We performed scanning tunneling spectroscopy measurement at selected locations on the center axis of carbon nanotubes, acquiring a map of the electronic density of states. Spatial oscillation was observed in the electronic density of states with the period of atomic lattice. Defect induced interface states were found at the junctions of the two semiconducting nanotubes, which are well-understood in analogy with the interface states of bulk semiconductor heterostructures. The electronic leak of the van Hove singularity peaks was observed across the junction, due to inefficient charge screening in a one-dimensional structure.open111

Paired gap states in a semiconducting carbon nanotube: Deep and shallow levels

Several paired, localized gap states were observed in semiconducting single-wall carbon nanotubes using spatially resolved scanning tunneling spectroscopy. A pair of gap states is found far from the band edges, forming deep levels, while the other pair is located near the band edges, forming shallow levels. With the help of a first-principles study, the former is explained by a vacancy-adatom complex while the latter is explained by a pentagon-heptagon structure. Our experimental observation indicates that the presence of the gap states provides a means to perform local band-gap engineering as well as doping without impurity substitution.open433

Change of Kinetic Roughening with Surfactant Hydrogen in Ge on Si(001) System(STM-Si(001))

The growth mode of Ge on a Si(001) substrate can be modified in the presence of dynamically supplied atomic hydrogen as a surfactant. A transition from the 3D to 2D growth was observed in scanning tunneling microscope images as the hydrogen flux increased to 1ML/sec. A layer-by-layer growth was successfully achieved with the hydrogen surfactant up to 8 monolayers of Ge. This growth behavior can be explained by kinetic roughening theory, showing a scaling behavior. The growth and roughness exponents, α and β, seem to decrease with hydrogen. It is believed that hydrogen saturates the dangling bonds and limits diffusion of the incoming Ge, resulting in a formation of large two dimensional islands

Thickness-dependent Dirac dispersions of few-layer topological insulators supported by metal substrate

The surface states protected by time-reversal symmetry in 3-dimensional topological insulators have recently been confirmed by angle-resolved photoemission spectroscopy, scanning tunneling microscopy, quantum transport and so on. However, the electronic properties of ultra-thin topological insulator films have not been extensively studied, especially when the films are grown on metal substrates. In this paper, we have elucidated the local behaviors of the electronic states of ultra-thin topological insulator Bi2Se3 grown with molecular beam epitaxy on Au(111) using scanning tunneling microscopy/spectroscopy. We have observed linear dispersion of electron interference patterns at higher energies than the Fermi energy that were not accessible by conventional angle-resolved photoemission spectroscopy. Moreover, the dispersion of the interference patterns varies with the film thickness, which is explained by band bending near the interface between the topological insulator and the metal substrate. Our experiments demonstrate that interfacial effects in thin topological insulator films on metal substrate can be sensed using scanning tunneling spectroscopy. © 2017 IOP Publishing Ltd.

“Multipoint force feedback” leveling of massively parallel tip arrays in scanning probe lithography

Nanoscale patterning with massively parallel 2D array tips is of significant interest in scanning probe lithography. A challenging task for tip-based large area nanolithography is maintaining parallel tip arrays at the same contact point with a sample substrate in order to pattern a uniform array. Here, polymer pen lithography is demonstrated with a novel leveling method to account for the magnitude and direction of the total applied force of tip arrays by a multipoint force sensing structure integrated into the tip holder. This high-precision approach results in a 0.001° slope of feature edge length variation over 1 cm wide tip arrays. The position sensitive leveling operates in a fully automated manner and is applicable to recently developed scanning probe lithography techniques of various kinds which can enable “desktop nanofabrication.

Probing Single-Molecule Dissociations from a Bimolecular Complex NO–Co-Porphyrin

Axial coordinations of diatomic NO molecules to metalloporphyrins play key roles in dynamic processes of biological functions such as blood pressure control and immune response. Probing such reactions at the single molecule level is essential to understand their physical mechanisms but has been rarely performed. Here we report on our single molecule dissociation experiments of diatomic NO from NO–Co-porphyrin complexes describing its dissociation mechanisms. Under tunneling junctions of scanning tunneling microscope, both positive and negative energy pulses gave rise to dissociations of NO with threshold voltages, +0.68 and −0.74 V at 0.1 nA tunneling current on Au(111). From the observed power law relations between dissociation rate and tunneling current, we argue that the dissociations were inelastically induced with molecular orbital resonances by stochastically tunneling electrons, which is supported with our density functional theory calculations. Our study shows that single molecule dissociation experiments can be used to probe reaction mechanisms in a variety of axial coordinations between small molecules and metalloporphyrins

Closed-loop ARS mode for scanning ion conductance microscopy with improved speed and stability for live cell imaging applications

Scanning ion conductance microscopy (SICM) is an increasingly useful nanotechnology tool for non-contact, high resolution imaging of live biological specimens such as cellular membranes. In particular, approach-retract-scanning (ARS) mode enables fast probing of delicate biological structures by rapid and repeated approach/retraction of a nano-pipette tip. For optimal performance, accurate control of the tip position is a critical issue. Herein, we present a novel closed-loop control strategy for the ARS mode that achieves higher operating speeds with increased stability. The algorithm differs from that of most conventional (i.e., constant velocity) approach schemes as it includes a deceleration phase near the sample surface, which is intended to minimize the possibility of contact with the surface. Analysis of the ion current and tip position demonstrates that the new mode is able to operate at approach speeds of up to 250 μm s−1. As a result of the improved stability, SICM imaging with the new approach scheme enables significantly improved, high resolution imaging of subtle features of fixed and live cells (e.g., filamentous structures & membrane edges). Taken together, the results suggest that optimization of the tip approach speed can substantially improve SICM imaging performance, further enabling SICM to become widely adopted as a general and versatile research tool for biological studies at the nanoscale level.NMRC (Natl Medical Research Council, S’pore

Catalytic Transparency of Hexagonal Boron Nitride on Copper for Chemical Vapor Deposition Growth of Large-Area and High-Quality Graphene

Graphene transferred onto h-BN has recently become a focus of research because of its excellent compatibility with large-area device applications. The requirements of scalability and clean fabrication, however, have not yet been satisfactorily addressed. The successful synthesis of graphene/h-BN on a Cu foil and DFT calculations for this system are reported, which demonstrate that a thin h-BN film on Cu foil is an excellent template for the growth of large-area and high-quality graphene. Such material can be grown on thin h-BN films that are less than 3 nm thick, as confirmed by optical microscopy and Raman spectroscopy. We have evaluated the catalytic growth mechanism and the limits on the CVD growth of high-quality and large-area graphene on h-BN film/Cu by performing Kelvin probe force microscopy and DFT calculations for various thicknesses of h-BN.126271sciescopu