Searching for Lyman alpha emission from a possible Zel'dovich pancake

The detection of 2 x 10(exp 14) solar mass of neutral hydrogen at a redshift of 3.397 has been reported. Top-down theories of structure formation predict such a mass of hydrogen collapsing to form a protocluster of galaxies. We sought to observe this object in Lyman-alpha, which could be produced through ionization by the metagalactic ionizing radiation field or through internal ionization processes. On 29 Apr. 1992, the region of the reported HI emission for 1800 seconds with the 1.3 meter McGraw-Hill reflector at Michigan-Dartmouth-M.I.T. Observatory was observed. Because the H1 emission reported has a transverse scale of 300 sec, a 1/3.06 reducing camera and a Thomson CCD were used to obtain a field of view of about 600 sec by 840 sec. A filter 88 A wide, centered at 5354 A was used; Lyman-alpha emission at z = 3.4 is redshifted to 5347 A. In order to avoid saturating the CCD with a bright star in the field, nine 200 second exposures were taken. The combination of these images shows no obvious extended Lyman-alpha emission at a level of about 28 magnitudes per square arcsecond. The field observed also shows a distant cluster of galaxies. In order to determine if the cluster could in any way be associated with the cloud of neutral hydrogen at z = 3.4, we sought to estimate its redshift from the size and magnitude of the galaxies and of the cluster as a whole. Omega = 1 and H(sub O) = 50 km s(sup -1) Mpc(sup -1) were adopted; our redshift estimates range from z = 0.2 to z = 0.6. The cluster is clearly not associated with the HI cloud at z = 3.4

ROSAT HRI observations of M33

Our 35 ksec ROSAT HRI observation of M33 reveals 37 X‐ray sources stronger than about 2.3σ. Eight of the sources are coincident with supernova remnants, four are coincident with giant HII regions, and three are coincident with HI holes. M33 X‐7 is a compact accreting eclipsing binary, similar to binary X‐ray sources detected in the Galaxy. Our ROSAT data confirm the binary interpretation and allow us to measure the period to an accuracy of 0.001%. The nuclear source, M33 X‐8, is not found to be variable in the ROSAT HRI observations, although it varied as much as 40% between Einstein HRI observations. © 1994 American Institute of PhysicsPeer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/87910/2/345_1.pd

High velocity clouds in nearby disk galaxies

Clouds of neutral hydrogen in our galaxy with the absolute value of v greater than 100 km/s cover approximately 10 percent of the sky to a limiting column density of 1 x 10(exp 18) cm(exp -2). These high velocity clouds (HVCs) may dominate the kinetic energy of neutral hydrogen in non-circular motion, and are an important though poorly understood component of galactic gas. It has been suggested that the HVCs can be reproduced by a combination of three phenomena: a galactic fountain driven by disk supernovae which would account for most of the HVCs, material tidally torn from the Magellanic Clouds, and an outer arm complex which is associated with the large scale structure of the warped galactic disk. We sought to detect HVCs in external galaxies in order to test the galactic fountain model

InAs/Ga(1-x)In(x)Sb superlattices for infrared detector applications

The successful growth of InAs/Ga(1-x)In(x)Sb superlattices and their optical and structural characterization is discussed. Samples were grown by molecular beam epitaxy at fairly low substrate temperatures (less than 400 C). Structural quality was assessed by reflection high energy electron difrraction, transmission electron microscopy, and x ray diffraction. Excellent structures were achieved for growth on thick, strain relaxed GaSb buffer layers on GaAs substrates, despite a residual threading dislocation density of 10(exp 9)cm(exp -2) originating at the GaSb/GaAs interface. Despite a lattice mismatch of 1.7 percent, InAs/Ga(0.75)In(0.25)Sb superlattices are observed to be free of misfit dislocations at the thicknesses examined here, owing to the close lattice match between the superlattice and GaSb, which evenly distributes compressive and tensile stresses between the InAs and Ga(0.75)In(0.25)Sb layers. Photoluminescence and photoconductivity measurements indicate that the energy gaps of the strain-layer superlattices are smaller than those of InAs/GaSb superlattices with the same layer thicknesses, and are in agreement with the theoretical predictions of Smith and Mailhiot. Energy gaps of 80 to 250 meV (15 to 5 microns) have been measured for InAs/Ga(0.75)In(0.25)Sb superlattices with 45 to 25 A/25 A layer thickness. Results demonstrate that far-infrared cutoff wavelengths are compatible with the thin superlattice layers required for strong optical absorption in type-II superlattices

New tunnel diode for zero-bias direct detection for millimeter-wave imagers

High-resolution passive millimeter wave imaging cameras require per pixel detector circuitry that is simple, has high sensitivity, low noise, and low power. Detector diodes that do not require bias or local oscillator input, and have high cutoff frequencies are strongly preferred. In addition, they must be manufacturable in large quantities with reasonable uniformity and reproducibility. Such diodes have not been obtainable for W-band and above. We are developing zero-bias square-law detector diodes based on InAs/Alsb/GaAlSb heterostructures which for the first time offer a cost-effective solution for large array formats. The diodes have a high frequency response and are relatively insensitive to growth and process variables. The large zero- bias non-linearity in current floor necessary for detection arises from interband tunneling between the InAs and the GaAlSb layers. Video resistance can be controlled by varying an Alsb tunnel barrier layer thickness. Our analysis shows that capacitance can be further decreased and sensitivity increased by shrinking the diode area, as the diode can have very high current density. DC and RF characterization of these devices and an estimate of their ultimate frequency performance in comparison with commercially available diodes are presented

Electron-Spin Filters Based on the Rashba Effect

Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting

New tunnel diode for zero-bias direct detection for millimeter-wave imagers

High-resolution passive millimeter wave imaging cameras require per pixel detector circuitry that is simple, has high sensitivity, low noise, and low power. Detector diodes that do not require bias or local oscillator input, and have high cutoff frequencies are strongly preferred. In addition, they must be manufacturable in large quantities with reasonable uniformity and reproducibility. Such diodes have not been obtainable for W-band and above. We are developing zero-bias square-law detector diodes based on InAs/Alsb/GaAlSb heterostructures which for the first time offer a cost-effective solution for large array formats. The diodes have a high frequency response and are relatively insensitive to growth and process variables. The large zero- bias non-linearity in current floor necessary for detection arises from interband tunneling between the InAs and the GaAlSb layers. Video resistance can be controlled by varying an Alsb tunnel barrier layer thickness. Our analysis shows that capacitance can be further decreased and sensitivity increased by shrinking the diode area, as the diode can have very high current density. DC and RF characterization of these devices and an estimate of their ultimate frequency performance in comparison with commercially available diodes are presented

Correction to: Cluster identification, selection, and description in Cluster randomized crossover trials: the PREP-IT trials

An amendment to this paper has been published and can be accessed via the original article