Observations of the Biology of \u3ci\u3ePhasgonophora Sulcata\u3c/i\u3e (Hymenoptera: Chalcididae), a Larval Parasitoid of the Twolined Chestnut Borer, \u3ci\u3eAgrilus Bilineatus\u3c/i\u3e (Coleoptera: Buprestidae), in Wisconsin

Phasgorzophora sulcata Westwood was the principal larval parasitoid of Agrilus bilineatus (Weber) during a study conducted in a natural oak-hardwood forest in the Kettle Moraine State Forest, Jefferson County, Wisconsin. Mean percent larval parasitism was 10.5%. Mean A. bilineatus and P. sulcata densities were, respectively, 53.0 and 6.1 adults per square meter of bark. The theoretical developmental threshold temperatures for over- wintering A. bilineatus and P. sulcata larvae were 17.8 and 19.l0C, respectively. The peak flight period of P. sulcata (9 July 1980) occurred ca. 3 weeks after the A. bilineatus peak flight (18 June 1980) at about the time of peak A. bilineatus egg eclosion. The P. sulcata sex ratios (malexfemales) for laboratory-reared and field-captured adults were 1:1.35 and 1:3.22, respectively

Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects

A strong anisotropy of electron spin decoherence is observed in GaAs/(AlGa)As quantum wells grown on (110) oriented substrate. The spin lifetime of spins perpendicular to the growth direction is about one order of magnitude shorter compared to spins along (110). The spin lifetimes of both spin orientations decrease monotonically above a temperature of 80 and 120 K, respectively. The decrease is very surprising for spins along (110) direction and cannot be explained by the usual Dyakonov Perel dephasing mechanism. A novel spin dephasing mechanism is put forward that is based on scattering of electrons between different quantum well subbands.Comment: 4 pages, 3 postscript figures, corrected typo

Corner overgrowth: Bending a high mobility two-dimensional electron system by 90 degrees

Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAs/AlGaAs heterojunction overgrown on top of an ex-situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp $90^{\rm o}$ angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Schroedinger-Poisson calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of new embedded quantum heterostructures.Comment: 3 pages, 4 figures, latest version accepted to AP

Hole spin dynamics and hole gg factor anisotropy in coupled quantum well systems

Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex spin-dependent phenomena. One manifestation is the large anisotropy of Zeeman spin splitting. Using undoped, coupled quantum wells (QWs), we examine this anisotropy by comparing the hole spin dynamics for high- and low-symmetry crystallographic orientations of the QWs. We directly measure the hole $g$ factor via time-resolved Kerr rotation, and for the low-symmetry crystallographic orientations (110) and (113a), we observe a large in-plane anisotropy of the hole $g$ factor, in good agreement with our theoretical calculations. Using resonant spin amplification, we also observe an anisotropy of the hole spin dephasing in the (110)-grown structure, indicating that crystal symmetry may be used to control hole spin dynamics

A circular dielectric grating for vertical extraction of single quantum dot emission

We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (approx. 5 nm) emission extraction from single InAs quantum dots. Simulations indicate that a dipole embedded in the nanostructure center radiates upwards into free space with a nearly Gaussian far-field, allowing a collection efficiency > 80 % with a high numerical aperture (NA=0.7) optic, and with 12X Purcell radiative rate enhancement. Fabricated devices exhibit an approx. 10 % photon collection efficiency with a NA=0.42 objective, a 20X improvement over quantum dots in unpatterned GaAs. A fourfold exciton lifetime reduction indicates moderate Purcell enhancement.Comment: (3 pages

Vertical quantum wire realized with double cleaved-edge overgrowth

A quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance quantization. The step height is strongly reduced from 2e^2/h due to the 2D-lead series resistance. We characterize the 2D density and mobility for both cleave facets with four-point measurements. The density on the first facet is modulated by the substrate potential, depleting a 2um wide strip that defines the wire length. Micro-photoluminescence shows an extra peak consistent with 1D electron states at the corner.Comment: 4 pages, 4 figure

Optical polarization of localized hole spins in p-doped quantum wells

The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly polarized pump pulse. An analysis of the spin dynamics and the spin-initialization process shows that two mechanisms are responsible for spin polarization with opposite sign: The difference of the g factor between the localized holes and the trions, as well as the capturing process of dark excitons by the localized hole states.Comment: 4 pages, 2 figure