Molecular ion trap-depletion spectroscopy of BaCl+^+

We demonstrate a simple technique for molecular ion spectroscopy. BaCl$^+$ molecular ions are trapped in a linear Paul trap in the presence of a room-temperature He buffer gas and photodissociated by driving an electronic transition from the ground X$^1\Sigma^+$ state to the repulsive wall of the A$^1\Pi$ state. The photodissociation spectrum is recorded by monitoring the induced trap loss of BaCl$^+$ ions as a function of excitation wavelength. Accurate molecular potentials and spectroscopic constants are determined. Comparison of the theoretical photodissociation cross-sections with the measurement shows excellent agreement. This study represents the first spectroscopic data for BaCl$^+$ and an important step towards the production of ultracold ground-state molecular ions.Comment: 5 pages, 5 figure

Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in InGaAs

We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and respective thicknesses of 20, 22 and 23 monolayers were deposited at 535 C. The parameters were chosen to grow layers slightly above and below the transition between the two- and three-dimensional growth mode. In-concentration profiles were obtained from high-resolution TEM images by composition evaluation by lattice fringe analysis. The measured profiles can be well described applying the segregation model of Muraki et al. [Appl. Phys. Lett. 61 (1992) 557]. Calculated photoluminescence peak positions on the basis of the measured concentration profiles are in good agreement with the experimental ones. Evaluating experimental In-concentration profiles it is found that the transition from the two-dimensional to the three-dimensional growth mode occurs if the indium content in the In-floating layer exceeds 1.1+/-0.2 monolayers. The measured exponential decrease of the In-concentration within the cap layer on top of the islands reveals that the In-floating layer is not consumed during island formation. The segregation efficiency above the islands is increased compared to the quantum wells which is explained tentatively by strain-dependent lattice-site selection of In. In addition, In0.25Ga0.75As quantum wells were grown at different temperatures between 500 oC and 550 oC. The evaluation of concentration profiles shows that the segregation efficiency increases from R=0.65 to R=0.83.Comment: 16 pages, 6 figures, 1 table, sbmitted in Phys. Rev.

Multichannel quantum-defect theory for ultracold atom-ion collisions

We develop an analytical model for ultracold atom-ion collisions using the multichannel quantum-defect formalism. The model is based on the analytical solutions of the r^-4 long-range potential and on the application of a frame transformation between asymptotic and molecular bases. This approach allows the description of the atom-ion interaction in the ultracold domain in terms of three parameters only: the singlet and triplet scattering lengths, assumed to be independent of the relative motion angular momentum, and the lead dispersion coefficient of the asymptotic potential. We also introduce corrections to the scattering lengths that improve the accuracy of our quantum-defect model for higher order partial waves, a particularly important result for an accurate description of shape and Feshbach resonances at finite temperature. The theory is applied to the system composed of a 40Ca+ ion and a Na atom, and compared to numerical coupled-channel calculations carried out using ab initio potentials. For this particular system, we investigate the spectrum of bound states, the rate of charge-transfer processes, and the collision rates in the presence of magnetic Feshbach resonances at zero and finite temperature.Comment: 39 pages, 21 figure

Optical studies of Ge islanding on Si(111)

We report an experimental study of the optical properties of island layers resulting from molecular beam epitaxial deposition of Ge on Si(111) substrates. The combination of electroreflectance spectroscopy of the E1 transition and Raman scattering allows us to separately determine the strain and composition of the islands. For deposition at 500 °C a deposited layer of 1.36 nm of Ge assembles into 80 nm diameter islands 11 nm thick. The average Si impurity content in the islands is 2.5% while the average in-plane strain is 0.5%. Both strain and Si impurity content in islands decrease with increasing Ge depositio

Schottky barrier height measurements of type-A and type-B NiSi2 epilayers on Si

Schottky barrier heights of single-crystal type-A and type-B NiSi2 epilayers on nondegenerate n-(111) Si have been measured by photoresponse and forward I–V methods. High-quality molecular beam epitaxy grown NiSi2 layers of thicknesses ranging from 70 to 600 Å on sputter-cleaned, P-doped Si subtrates (~ 1.5 × 1015 cm – 3) were studied. The type-A and type-B orientations consistently yield photoresponse barrier heights which differ by greater than 0.1 eV. We observe the value phi Bn=0.62 ± 0.01 eV for all type-A structures from both photoresponse and I–V measurements. However, we obtain a discrepancy between barrier heights measured by I–V (phi Bn=0.69 ± 0.01 eV) and photoresponse (phi Bn=0.77 ± 0.05 eV) methods, and in addition consistently observe an unusual bowing of the type-B photoresponse curves at low photon energies. We show that both the detailed shape of the type-B photoresponse curves and the discrepancy between I–V and photoresponse-measured barrier heights can be accounted for by modeling the type-B barrier as a mixture of high and low barrier regions. Quantitative agreement with experiment is obtained for the values phi hi =0.81 ± 0.01 eV and phi lo 0.64 ± 0.01 eV, with effective fractional area coverages of 91% and 9% for high- and low-barrier regions, respectively

Physics and chemistry of hydrogen in the vacancies of semiconductors

Hydrogen is well known to cause electrical passivation of lattice vacancies in semiconductors. This effect follows from the chemical passivation of the dangling bonds. Recently it was found that H in the carbon vacancy of SiC forms a three-center bond with two silicon neighbors in the vacancy, and gives rise to a new electrically active state. In this paper we examine hydrogen in the anion vacancies of BN, AlN, and GaN. We find that three-center bonding of H is quite common and follows clear trends in terms of the second-neighbor distance in the lattice, the typical (two-center) hydrogen-host-atom bond length, the electronegativity difference between host atoms and hydrogen, as well as the charge state of the vacancy. Three-center bonding limits the number of H atoms a nitrogen vacancy can capture to two, and prevents electric passivation in GaAs as well