793 research outputs found
Influence of nano-mechanical properties on single electron tunneling: A vibrating Single-Electron Transistor
We describe single electron tunneling through molecular structures under the
influence of nano-mechanical excitations. We develop a full quantum mechanical
model, which includes charging effects and dissipation, and apply it to the
vibrating C single electron transistor experiment by Park {\em et al.}
{[Nature {\bf 407}, 57 (2000)].} We find good agreement and argue vibrations to
be essential to molecular electronic systems. We propose a mechanism to realize
negative differential conductance using local bosonic excitations.Comment: 7 pages, 6 figure
Scaling of the Kondo zero bias peak in a hole quantum dot at finite temperatures
We have measured the zero bias peak in differential conductance in a hole
quantum dot. We have scaled the experimental data with applied bias and
compared to real time renormalization group calculations of the differential
conductance as a function of source-drain bias in the limit of zero temperature
and at finite temperatures. The experimental data show deviations from the T=0
calculations at low bias, but are in very good agreement with the finite T
calculations. The Kondo temperature T_K extracted from the data using T=0
calculations, and from the peak width at 2/3 maximum, is significantly higher
than that obtained from finite T calculations.Comment: Accepted to Phys. Rev. B (Rapid
Cotunneling at resonance for the single-electron transistor
We study electron transport through a small metallic island in the
perturbative regime. Using a recently developed diagrammatic technique, we
calculate the occupation of the island as well as the conductance through the
transistor in forth order in the tunneling matrix elements, a process referred
to as cotunneling. Our formulation does not require the introduction of a
cut-off. At resonance we find significant modifications of previous theories
and good agreement with recent experiments.Comment: 5 pages, Revtex, 5 eps-figure
Interference and interaction effects in multi-level quantum dots
Using renormalization group techniques, we study spectral and transport
properties of a spinless interacting quantum dot consisting of two levels
coupled to metallic reservoirs. For strong Coulomb repulsion and an applied
Aharonov-Bohm phase , we find a large direct tunnel splitting
between the levels of
the order of the level broadening . As a consequence we discover a
many-body resonance in the spectral density that can be measured via the
absorption power. Furthermore, for , we show that the system can be
tuned into an effective Anderson model with spin-dependent tunneling.Comment: 5 pages, 4 figures included, typos correcte
Strong Charge Fluctuations in the Single-Electron Box: A Quantum Monte Carlo Analysis
We study strong electron tunneling in the single-electron box, a small
metallic island coupled to an electrode by a tunnel junction, by means of
quantum Monte Carlo simulations. We obtain results, at arbitrary tunneling
strength, for the free energy of this system and the average charge on the
island as a function of an external bias voltage. In much of the parameter
range an extrapolation to the ground state is possible. Our results for the
effective charging energy for strong tunneling are compared to earlier -- in
part controversial -- theoretical predictions and Monte Carlo simulations
Coherent photon assisted cotunneling in a Coulomb blockade device
We study cotunneling in a double junction Coulomb blockade device under the
influence of time dependent potentials. It is shown that the ac-bias leads to
photon assisted cotunneling which in some cases may dominate the transport. We
derive a general non-perturbative expression for the tunneling current in the
presence of oscillating potentials and give a perturbative expression for the
photon assisted cotunneling current.Comment: Replaced with a longer paper which includes a non-perturbative
calculation. 13 pages with 1 figure. To be published in Physical Review
Resonant tunneling through a macroscopic charge state in a superconducting SET transistor
We predict theoretically and observe in experiment that the differential
conductance of a superconducting SET transistor exhibits a peak which is a
complete analogue in a macroscopic system of a standard resonant tunneling peak
associated with tunneling through a single quantum state. In particular, in a
symmetric transistor, the peak height is universal and equal to . Away from the resonance we clearly observe the co-tunneling current
which in contrast to the normal-metal transistor varies linearly with the bias
voltage.Comment: 11 pages, 3 figures, Fig. 1 available upon request from the first
autho
Charge transport through single molecules, quantum dots, and quantum wires
We review recent progresses in the theoretical description of correlation and
quantum fluctuation phenomena in charge transport through single molecules,
quantum dots, and quantum wires. A variety of physical phenomena is addressed,
relating to co-tunneling, pair-tunneling, adiabatic quantum pumping, charge and
spin fluctuations, and inhomogeneous Luttinger liquids. We review theoretical
many-body methods to treat correlation effects, quantum fluctuations,
nonequilibrium physics, and the time evolution into the stationary state of
complex nanoelectronic systems.Comment: 48 pages, 14 figures, Topical Review for Nanotechnolog
A renormalization-group analysis of the interacting resonant level model at finite bias: Generic analytic study of static properties and quench dynamics
Using a real-time renormalization group method we study the minimal model of
a quantum dot dominated by charge fluctuations, the two-lead interacting
resonant level model, at finite bias voltage. We develop a set of RG equations
to treat the case of weak and strong charge fluctuations, together with the
determination of power-law exponents up to second order in the Coulomb
interaction. We derive analytic expressions for the charge susceptibility, the
steady-state current and the conductance in the situation of arbitrary system
parameters, in particular away from the particle-hole symmetric point and for
asymmetric Coulomb interactions. In the generic asymmetric situation we find
that power laws can be observed for the current only as function of the level
position (gate voltage) but not as function of the voltage. Furthermore, we
study the quench dynamics after a sudden switch-on of the level-lead couplings.
The time evolution of the dot occupation and current is governed by exponential
relaxation accompanied by voltage-dependent oscillations and characteristic
algebraic decay.Comment: 24 pages, 13 figures; revised versio
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