51,610 research outputs found

    Optimization of Al/AlOx/AlAl/AlO_x/Al-Layer Systems for Josephson Junctions from a Microstructure Point of View

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    Al/AlOx/AlAl/AlO_x/Al-layer systems are frequently used for Josephson junction-based superconducting devices. Although much work has been devoted to the optimization of the superconducting properties of these devices, systematic studies on influence of deposition conditions combined with structural analyses on the nanoscale are rare up to now. We have focused on the optimization of the structural properties of Al/AlOx/AlAl/AlO_x/Al-layer systems deposited on Si(111) substrates with a particular focus on the thickness homogeneity of the AlOxAlO_x-tunnel barrier. A standard high-vacuum electron-beam deposition system was used and the effect of substrate pretreatment, different Al-deposition temperatures and Al-deposition rates was studied. Transmission electron microscopy was applied to analyze the structural properties of the Al/AlOx/AlAl/AlO_x/Al-layer systems to determine the thickness homogeneity of the AlOxAlO_x layer, grain size distribution in the Al layers, Al-grain boundary types and the morphology of the Al/AlOxAl/AlO_x interface. We show that the structural properties of the lower Al layer are decisive for the structural quality of the whole Al/AlOx/AlAl/AlO_x/Al-layer system. Optimum conditions yield an epitaxial Al(111) layer on a Si(111) substrate with an Al-layer thickness variation of only 1.6 nm over more than 10 μm\mu m and large lateral grain sizes up to 1 μm\mu m. Thickness fluctuations of the AlOxAlO_x-tunnel barrier are minimized on such an Al layer which is essential for the homogeneity of the tunnel current. Systematic variation of the Al-deposition rate and deposition temperature allows to develop an understanding of the growth mechanisms

    Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films

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    We investigate the structure and magneto-transport properties of thin films of the Co_2Cr_xFe_(1-x)Al full-Heusler compound, which is predicted to be a half-metal by first-principles theoretical calculations. Thin films are deposited by magnetron sputtering at room temperature on various substrates in order to tune the growth from polycrystalline on thermally oxidized Si substrates to highly textured and even epitaxial on MgO(001) substrates, respectively. Our Heusler films are magnetically very soft and ferromagnetic with Curie temperatures up to 630 K. The total magnetic moment is reduced compared to the theoretical bulk value, but still comparable to values reported for films grown at elevated temperature. Polycrystalline Heusler films combined with MgO barriers are incorporated into magnetic tunnel junctions and yield 37% magnetoresistance at room temperature

    Influence of point defects on magnetic vortex structures

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    We employed micro-Hall magnetometry and micromagnetic simulations to investigate magnetic vortex pinning at single point defects in individual submicron-sized permalloy disks. Small ferromagnetic particles containing artificial point defects can be fabricated by using an image reversal electron beam lithography process. Corresponding micromagnetic calculations, modeling the defects within the disks as holes, give reasonable agreement between experimental and simulated pinning and depinning field values

    Implications of the isotope effects on the magnetization, magnetic torque and susceptibility

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    We analyze the magnetization, magnetic torque and susceptibility data of La2-xSrxCu(16,18)O4 and YBa2(63,65)CuO7-x near Tc in terms of the universal 3D-XY scaling relations. It is shown that the isotope effect on Tc mirrors that on the anisotropy. Invoking the generic behavior of the anisotropy the doping dependence of the isotope effects on the critical properties, including Tc, correlation lengths and magnetic penetration depths are traced back to a change of the mobile carrier concentration.Comment: 5 pages, 3 figure

    Characterization of low loss microstrip resonators as a building block for circuit QED in a 3D waveguide

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    Here we present the microwave characterization of microstrip resonators made from aluminum and niobium inside a 3D microwave waveguide. In the low temperature, low power limit internal quality factors of up to one million were reached. We found a good agreement to models predicting conductive losses and losses to two level systems for increasing temperature. The setup presented here is appealing for testing materials and structures, as it is free of wire bonds and offers a well controlled microwave environment. In combination with transmon qubits, these resonators serve as a building block for a novel circuit QED architecture inside a rectangular waveguide

    Thickness dependence of linear and quadratic magneto-optical Kerr effect in ultrathin Fe(001) films

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    Magneto-optical Kerr effect (MOKE) magnetometry is one of the most widely employed techniques for the characterization of ferromagnetic thin-film samples. Some information, such as coercive fields or anisotropy strengths can be obtained without any knowledge of the optical and magneto-optical (MO) properties of the material. On the other hand, a quantitative analysis, which requires a precise knowledge of the material's index of refraction n and the MO coupling constants K and G is often desirable, for instance for the comparison of samples, which are different with respect to ferromagnetic layer thicknesses, substrates, or capping layers. While the values of the parameters n and the linear MO coupling parameter K reported by different authors usually vary considerably, the relevant quadratic MO coupling parameters G of Fe are completely unknown. Here, we report on measurements of the thickness dependence (0-60nm) of the linear and quadratic MOKE in epitaxial bcc-Fe(001) wedge-type samples performed at a commonly used laser wavelength of 670nm. By fitting the thickness dependence we are able to extract a complete set of parameters n, K, (G11 - G12), and G44 for the quantitative description of the MOKE of bcc-Fe(001). We find sizable different n, K, and G parameters for films thinner than about 10nm as compared to thicker films, which is indicative of a thickness dependence of the electronic properties or of surface contributions to the MOKE. The effect size of the quadratic MOKE is found to be about a third of the record values recently reported for Co2FeSi.Comment: 8 pages, 5 figure
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