Two-stage emitter follower is temperature stabilized

Two-stage temperature stabilized circuit using two transistors is described. Increase in temperature causes the base-to-emitter voltage of n-p-n transistor to become less positive whereas the base-to-emitter voltage of p-n-p transistor becomes less negative, so the temperature-induced variation in V sub 1 and V sub 2 cancel out

Sidewall depletion in nano-patterned LAO/STO heterostructures

We report the fabrication of nanostructures from the quasi-two-dimensional electron gas (q2DEG) formed at the LaAlO$_{3}$/ SrTiO$_{3}$ (LAO/STO) interface. The process uses electron beam lithography in combination with reactive ion etching. This technique allows to pattern high-quality structures down to lateral dimensions as small as $100$nm while maintaining the conducting properties without inducing conductivity in the STO substrate. Temperature dependent transport properties of patterned Hall bars of various widths show only a small size dependence of conductivity at low temperature as well as at room temperature. The deviation can be explained by a narrow lateral depletion region. All steps of the patterning process are fully industry compatible.Comment: 5 pages, 4 figure

Approximating parabolas as natural bounds of Heisenberg spectra: Reply on the comment of O. Waldmann

O. Waldmann has shown that some spin systems, which fulfill the condition of a weakly homogeneous coupling matrix, have a spectrum whose minimal or maximal energies are rather poorly approximated by a quadratic dependence on the total spin quantum number. We comment on this observation and provide the new argument that, under certain conditions, the approximating parabolas appear as natural bounds of the spectrum generated by spin coherent states.Comment: 2 pages, accepted for Europhysics Letter