Разработка клиент-серверного приложения для сбора, хранения и обработки метеоданных

The paper describes the client-server application for collecting, storing and processing of meteorological observations data. The application is based on the structure and content of meteorological observations data from land and sea stations in the code KN-01 (international form FM 12-VII SINOP and FM 13-VII SHIP)

Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers

peer reviewedThe ac characteristics of GaN : Mg and undoped GaN layers, grown by MOVPE on sapphire substrates, are measured for a wide range of temperature and bias conditions, in order to investigate the effect of the magnesium-related level on the transport properties. Two peaks, whose height and position depend on the measurement temperature, are observed in the admittance curves (G/ω versus frequency) of the Mg-doped samples, whereas only one peak appears in undoped samples. The study of the frequency dependence of the impedance, with a model including the two metallic Au/GaN junctions, the GaN layer itself, shows that, besides the effect of the differential resistance of the layer which plays a role in both sample types, the presence of a Mg-related deep level contributes to the observed variations of the peaks in the admittance curves of the p-doped samples. Results of a theoretical steady-state and small-signal analysis based on numerical modelling of the Au/GaN/Au heterostructure complete our analysis

Growth of III/V materials on large area silicon

peer reviewedContinuous miniaturization has been at the heart of advances in modern semiconductor electronics. However, further scalability has seen its limits for conventional CMOS technology due to short channel effects. To further increase the performance for the 32 and 22 nm nodes, channel engineering introducing III-V materials may be necessary. Hence, epitaxial growth and processing strategies have to be developed which combine the high complexity of an MOCVD growth chamber with the requirements of the silicon industry

Do natural resources crowd out capital formation?

EThOS - Electronic Theses Online ServiceGBUnited Kingdo

Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy

Experimental results of electrical characterization of InGaN/GaN multiple-quantum-well electrolu- minescence test structures obtained by thermal admittance spectroscopy are presented. The stu- died GaN : Mg/5 × (InGaN/GaN)/GaN:Si structures were grown on c-plane sapphire substrate by metal-organic vapor phase epitaxy. Admittance measurements were conducted from room tem- perature down to 125 K for a wide frequency range and for different applied bias voltages. Analy- sis of the capacitance versus frequency curves shows the presence of several cutoff frequencies which originate from the response of equivalent RC series circuits and give peaks in the conduc- tance divided by angular frequency. The dependence of the position and the amplitude of these peaks on temperature is discussed

Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes

Thermal admittance spectroscopy measurements at temperatures ranging from room temperature to 90 K are performed on Schottky structures based on Mg-doped GaN layers grown by metalorganic vapor phase epitaxy on sapphire. The analysis of the experimental data is made by a detailed theoretical study of the steady-state and small-signal electrical characteristics of the structures. Numerical simulations are based on the solution of the basic semiconductor equations for the structure consisting of two Schottky diodes connected back to back by a conduction channel formed by the GaN layer. The description explicitly includes the Mg-related acceptor level, with its temperature- and position-dependent incomplete occupation state, leading to a dynamic exchange with the valence band. It fully reproduces the variations with temperature of the capacitance-- frequency and conductance over frequency curves, allowing to give for all temperature ranges the origin of the various contributions to the junction capacitance and of the microscopic mechanisms responsible for the capacitance--frequency cutoff. Series resistance effects are shown to be dominant at temperatures above 230 K, whereas the Mg-related acceptor level governs the electrical behavior below 230 K. The existence of a second acceptor level with an activation energy of several tens of meV is revealed from the analysis of the characteristics at low temperature. An optimized fitting procedure based on the comparison of the electrical characteristics obtained from the numerical simulations to the experimental data allows one to determine the microscopic parameters describing the structure, among which the acceptor activation energies, thermal capture cross sections, concentrations, and the Schottky contact barrier heights are the most important ones. The obtained activation energy of the Mg-acceptor level of 210 meV is by a factor of 2 larger than that obtained from a classical Arrhenius plot, showing that a complete description of Mg-doped GaN junctions requires the correct treatment of the Mg level, acting as a dopant and as deep impurity, as well as the inclusion of series resistance effects