25 research outputs found
Essential Differences between and Axis Tunneling and Zero Bias Conductance in the Cuprates
The peculiarities in tunneling characteristics have been studied in the light
of the controversy between s-wave and d-wave character of High
superconductivity. We show that anisotropic s-wave gap has the same low voltage
power law conductance and two peak structure in the density of states as d-wave
superconductors. The asymmetric tunneling conductance and zero bias conductance
for the c-axis tunneling is shown to occur because of finite band splitting
coming from the interlayer hopping parameter.Comment: revtex version 3.0, 13 pages 4 figures available on request from
[email protected] - IP/BBSR/94-2
Scaling of transition temerature and CuO_2 plane buckling in the cuprate superconductors
Recently it is seen\cite{Nature},that both and the buckling of the
planes goes through a maximum at the same doping level. We show that
only for optimal doping concentration the Fermi surface touches the M()
point in the BZ, where the matrix element for interlayer pair tunneling
amplitude is largest, so that the gain in delocalization energy by tunneling(in
pairs) along the axis is largest. Buckling of the planes on the other hand
modulates the separation between the planes and thereby modulates the
interlayer pair tunneling amplitude. That is why both and buckling
angle(Oxygen atom displacement out of the plane) scales the same way with
doping concentration. We have calculated and buckling angle for
various doping concentration. The agreement with experiment is remarkably good.
We also point out the possible reason for large(about 1 percent) change of the
buckling mode phonon frequency, accross the transition temperature. scatteringComment: Summitted to Physics C, Journal of Superconductivity, 6 pages Tex
file with 4 postscript files attache
Is LiPdB a self-doped hole superconductor ?
We propose that the electrons responsible for superconductivity in Li2Pd3B
come from the palladium 4d-electrons. So, its electronic properties are likely
to be dominated by strong electronic correlations. The basic unit in this
material are PdB octahedra which share vertices to form a 3-dimensional
network. Due to the highly distorted nature of the PdB octahedron, one far
stretched Pd atom per octahedra becomes almost inactive for electronic
conduction. Thus, the material escapes the fate of becoming a half- filled
insulating Mott antiferromagnet by hiding extra charges at these inactive Pd
sites and becomes a self-doped correlated metal. We propose a 3-dimensional
single band t-J model which could be the correct minimal model for this
material.Comment: 4 pages Revtex, 2 figures included in the text, some typos corrected,
some text and references adde