Electrically switchable and tunable rashba-type spin splitting in covalent perovskite oxides

In transition-metal perovskites (ABO_3) most physical properties are tunable by structural parameters such as the rotation of the BO_6 octahedra. Examples include the Neel temperature of orthoferrites, the conductivity of mixed-valence manganites, or the band gap of rare-earth scandates. Since oxides often hold large internal electric dipoles and can accommodate heavy elements, they also emerge as prime candidates to display Rashba spin-orbit coupling, through which charge and spin currents may be efficiently interconverted. However, despite a few experimental reports in SrTiO_3-based interface systems, the Rashba interaction has been little studied in these materials, and its interplay with structural distortions remains unknown. In this Letter, we identify a bismuth-based perovskite with a large, electrically switchable Rashba interaction whose amplitude can be controlled by both the ferroelectric polarization and the breathing mode of oxygen octahedra. This particular structural parameter arises from the strongly covalent nature of the Bi-O bonds, reminiscent of the situation in perovskite nickelates. Our results not only provide novel strategies to craft agile spin-charge converters but also highlight the relevance of covalence as a powerful handle to design emerging properties in complex oxides

Symmetrical interfacial reconstruction and magnetism in La_(0.7)Ca_(0.3)MnO_(3)/YBa_(2)Cu_(3)O_(7)/La_(0.7)Ca_(0.3)MnO_(3) heterostructures

We have analyzed the interface structure and composition of La_(0.7)Ca_(0.3)MnO_(3)/YBa_(2)Cu_(3)O_(7)/La_(0.7)Ca_(0.3)MnO_(3) trilayers by combined polarized neutron reflectometry, aberration-corrected microscopy, and atomic column resolution electron-energy-loss spectroscopy and x ray absorption with polarization analysis. We find the same stacking sequence at both top and bottom cuprate interfaces. X-ray magnetic circular dichroism experiments show that both cuprate interfaces are magnetic with a magnetic moment induced in Cu atoms as expected from symmetric Mn-O-Cu superexchange paths. These results supply a solid footing for the applicability of recent theories explaining the interplay between magnetism and superconductivity in this system in terms of the induced Cu spin polarization at both interfaces

Yttria-stabilized zirconia/SrTiO_(3) oxide heteroepitaxial interface with symmetry discontinuity

We show that yttria-stabilized zirconia (YSZ) films deposited on structurally dissimilar SrTiO_(3)(110) substrates exhibit two-dimensional layer-by-layer growth. We observed that, up to a thickness of about 15 nm, the square (001) basal plane of the cubic YSZ grows epitaxially on the rectangular (110) crystallographic plane of SrTiO3 substrates, with [110]YSZ(001)//[001]SrTiO_(3)(110) epitaxial relationship. Thus, the heterointerface presents symmetry discontinuity between the YSZ(001) film and the lower surface symmetry SrTiO_(3)(110) substrate. Beyond this specific case, we envisage similar approaches to develop other innovative oxide interfaces showing similar crystal symmetry discontinuities

Vortex phases in superconducting Nb thin films with periodic pinning

Magnetotransport properties have been used to investigate vortex phases in Nb films with periodic arrays of magnetic pinning centers. This kind of samples show a continuous glass transition similar to that observed in Nb plain films, but the periodic pinning yields different critical exponents and enhanced glass transition temperature at the matching field

Stoichlometry control over a wide composition range of sputtered CuGa_(x)In_(1-x)Se_(2)

Films of CuGaxIn(1-x)Se2 (CGIS) have been grown by rf sputtering from stoichiometric single targets with different Ga/In ratios. Adjusting growth temperature and argon pressure we are able to deposit films with a wide range of Cu contents: From CGIS Cu-poor (16 at. %) to Cu2Se. Reevaporation of (Ga,In)2Se3 binaries is observed when substrate temperature is increased at a constant argon pressure (20 mTorr). An increase in Ar pressure from 5 to 150 mTorr at a growth temperature of 450-degrees-C, produces a decrease in Cu atomic percentage from 24% to 16% due to a preferential diffusion of Cu sputtered atoms in the plasma. The relevant film properties of the analyzed films are found to be ruled by the Cu content. Graded composition absorbers with adequate physical properties for the fabrication of photovoltaic devices are grown with a proper choice of growth parameters

Vortex liquid entanglement in irradiated YBa_(2)Cu_(3)O_(7) thin films

Epitaxial YBa_(2)Cu_(3)O_(7) thin films, grown by high-pressure dc sputtering, are irradiated with He^(+) ions at 80 keV with doses between 10^(14) and 10^(15) cm^(-2). Irradiation reduces the critical temperature but it does not modify the carrier concentration. Angle-dependent resistivity is used to show that the mass anisotropy does not change upon irradiation. The melting transition in magnetic fields applied parallel to the c axis is analyzed by I-V critical scaling, and all irradiated and nonirradiated samples show a three-dimensional vortex glass transition with the same critical exponents. The dissipation in the liquid state is analyzed in terms of the activation energy of the magnetoresistance in a perpendicular magnetic field. While as-grown samples show an activation energy depending as 1/H on the applied magnetic field, irradiated samples show a dependence as 1/H^(0.5), characteristic of plastic deformation of vortices. This is discussed in terms of the point disorder introduced by ion irradiation

Interface barriers for flux motion in high-temperature superconducting superlattices

We study angular dependent magnetoresistance in the vortex-liquid phase of epitaxial YBa2Cu3O7 thin films and YBa_2Cu_3O_7/PrBa_2Cu_3O_7 superlattices. Superlattices were grown with different PrBa_2Cu_3O_7 thickness in order to tune coupling between YBa_2Cu_3O_7 layers. While dissipation of single film and coupled superlattices is scaled with the anisotropic three-dimensional model in the whole angular range, decoupling through PrBa_2Cu_3O_7 spacer breaks down the scaling and yields strong reduction of the dissipation when the magnetic fields are applied up to ±20degrees around the interface direction. Bean-Livingston barriers at the interface are the mechanism which governs this behavior

Tunnel magnetoresistance in La_(0.7)Ca_(0.3)MnO_(3)/PrBa_(2)Cu_(3)O_(7)/La_(0.7)Ca_(0.3)MnO_(3)

We report large tunneling magnetoresistance in La_(0.7)Ca_(0.3)MnO_(3) (8 nm)/PrBa_(2)Cu_(3)O_(7) (2.4 nm)/La_(0.7)Ca_(0.3)MnO_(3) (50 nm) junctions. The coherent growth of the cuprate on the manganite allows the deposition of ultrathin barriers which are continuous and flat over long lateral distances. Epitaxial strain causes the top layer to be a weaker ferromagnet without a significant decrease in the spin polarization

Erratum: Competition between covalent bonding and charge transfer at complex-oxide interfaces [Physical Review Letters (2014) 112 (196802)]

Corrección de erratas del artículo "Competition between Covalent Bonding and Charge Transfer at Complex-Oxide Interfaces" (Juan Salafranca, Julián Rincón Javier Tornos, Carlos León, Jacobo Santamaria, Elbio Dagotto,Stephen J. Pennycook, Maria Varela)[Phys. Rev. Lett. 112, 196802 (2014)]Depto. de Estructura de la Materia, Física Térmica y ElectrónicaFac. de Ciencias FísicasTRUEpu