Method for passivating at least a part of a substrate surface

A method for passivating at least a part of a surface of a semiconductor substrate, wherein at least one layer comprising at least one a-Si:H passivation layer is realized on said part of the substrate surface by: - generating a plasma (P) by means of at least one plasma source (3) mounted on the process chamber (5) at a distance (L) from the substrate surface, at least part of the plasma (P) being injected into the chamber (5) and achieving a supersonic speed; - contacting at least a part of the plasma (P), injected into the chamber (5), with the said part of the substrate surface; and - supplying at least one precursor suitable for passivation layer realization to the said part of the plasma (P) via a plurality of injection nozzles (19) of an injector device (17), such that the density of the precursor at each injection nozzle (19) is lower than 12x1022 particles/m3

Real-time study of α-Si:H/c-Si heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation

The performance of many devices based on Si thin films deposited on crystalline Si (c-Si) is highly governed by interface quality. For many of these applications, only fully epitaxial films or fully amorphous films having an abrupt interface with the substrate are desired. However, the realization of these perfectly sharp interfaces and the mechanisms governing their formation are not fully understood yet. In this study, the interface formation between Si thin films and c-Si has been investigated by simultaneously applying three complementary optical techniques in real time during low temperature Si film growth. The films were deposited in a hot-wire chemical vapor deposition process by using both native oxide covered and H terminated Si(100) substrates. The formation of hydrogenated amorphous Si (a-Si:H), epitaxial Si, and mixed phase Si has been detected with spectroscopic ellipsometry by measuring the optical properties of the growing films. The evolution of the hydrogen content and hydrogen bonding configurations in the films has been monitored by attenuated total reflection infrared spectroscopy. A clear dependence of the hydrogen content on film morphology is observed with the amorphous films containing significantly more hydrogen. The surface and interface sensitive technique of second-harmonic generation (SHG) has been applied both spectroscopically and in real time. The SHG spectra of a-Si:H films on Si(100) obtained in the SHG photon energy range of 2.7–3.5 eV revealed a dominant contribution originating from the film/substrate interface related to E/E1 critical point (CP) transitions of c-Si. The real-time behavior of the SHG response is shown to strongly depend on differences in initial film morphology, which allows for identification of direct a-Si:H/c-Si heterointerface formation, nanometer-level epitaxial growth, and fully epitaxial growth at a very early stage of film growth. On the basis of the results obtained by the three optical techniques, the c-Si surface passivation mechanism by a-Si:H thin films is addressed and it is demonstrated that the combination of the techniques provides a profound method to control processes occurring during Si thin film growt

Application of a hybrid collisional radiative model to recombining argon plasmas

A collisional radiative model, in which a hybrid cut-off technique is used, is applied to recombining plasmas to study the atomic state distribution function (ASDF) and the recombination coefficient. Computations of the ASDF using semi-empirical rate coefficients of Vriens and Smeets (V-S) and Drawin (D) are compared with experimental values measured at various positions in a free expanding argon arc jet. Apart from the shock position, where the calculated results are too low, the model calculations are higher than the experimental results. The volumetric recombination coefficient has a T/sub e//sup -4.2/ and a T/sub e//sup -4.8/ dependence when semi-empirical rate coefficients of, respectively, V-S and D are used. The differences between the models based on the rate coefficients of V-S and D indicate that the recombination flow is sensitive to the low temperature behavior of the rate coefficient

Outcomes to Objectives: Learning About Quality Assessment

Recently assessment has become an important component of student affairs and higher education to assist in determining the effect and impact of programs and educational initiatives. To embrace this trend, the Office of Housing and Residence Life at Ball State University (IN) created learning outcomes for students living in residence halls. Through reflective questioning, discussion, and assessment, the Residence Life program strives to further the development and learning experience of students

Towards an analytical framework of science communication models

This chapter reviews the discussion in science communication circles of models for public communication of science and technology (PCST). It questions the claim that there has been a large-scale shift from a ‘deficit model’ of communication to a ‘dialogue model’, and it demonstrates the survival of the deficit model along with the ambiguities of that model. Similar discussions in related fields of communication, including the critique of dialogue, are briefly sketched. Outlining the complex circumstances governing approaches to PCST, the author argues that communications models often perceived to be opposed can, in fact, coexist when the choices are made explicit. To aid this process, the author proposes an analytical framework of communication models based on deficit, dialogue and participation, including variations on each

In vivo (31)P magnetic resonance spectroscopy and morphometric analysis of the perfused vascular architecture of human glioma xenografts in nude mice.

The relationship between the bioenergetic status of human glioma xenografts in nude mice and morphometric parameters of the perfused vascular architecture was studied using (31)P magnetic resonance spectroscopy (MRS), fluorescence microscopy and two-dimensional digital image analysis. Two tumour lines with a different vascular architecture were used for this study. Intervascular distances and non-perfused area fractions varied greatly between tumours of the same line and tumours of different lines. The inorganic phosphate-nucleoside triphosphate (P(i)/NTP) ratio increased rapidly as mean intervascular distances increased from 100 microm to 300 microm. Two morphometric parameters - the percentage of intervascular distances larger than 200 microm (ivd200) and the non-perfused area fraction at a distance larger than 100 microm from a nearest perfused vessel (area100), - were deduced from these experiments and related to the P(i)/NTP ratio of the whole tumour. It is assumed that an aerobic to anaerobic transition influences the bioenergetic status, i.e. the P(i)/NTP ratio increased linearly with the percentage of ivd200 and the area100