1,789 research outputs found
Distributed PI-Control with Applications to Power Systems Frequency Control
This paper considers a distributed PI-controller for networked dynamical
systems. Sufficient conditions for when the controller is able to stabilize a
general linear system and eliminate static control errors are presented. The
proposed controller is applied to frequency control of power transmission
systems. Sufficient stability criteria are derived, and it is shown that the
controller parameters can always be chosen so that the frequencies in the
closed loop converge to nominal operational frequency. We show that the load
sharing property of the generators is maintained, i.e., the input power of the
generators is proportional to a controller parameter. The controller is
evaluated by simulation on the IEEE 30 bus test network, where its
effectiveness is demonstrated
Control of MTDC Transmission Systems under Local Information
High-voltage direct current (HVDC) is a commonly used technology for
long-distance electric power transmission, mainly due to its low resistive
losses. In this paper a distributed controller for multi-terminal high-voltage
direct current (MTDC) transmission systems is considered. Sufficient conditions
for when the proposed controller renders the closed-loop system asymptotically
stable are provided. Provided that the closed loop system is asymptotically
stable, it is shown that in steady-state a weighted average of the deviations
from the nominal voltages is zero. Furthermore, a quadratic cost of the current
injections is minimized asymptotically
Identifying capacitive and inductive loss in lumped element superconducting hybrid titanium nitride/aluminum resonators
We present a method to systematically locate and extract capacitive and
inductive losses in superconducting resonators at microwave frequencies by use
of mixed-material, lumped element devices. In these devices, ultra-low loss
titanium nitride was progressively replaced with aluminum in the
inter-digitated capacitor and meandered inductor elements. By measuring the
power dependent loss at 50 mK as the Al-TiN fraction in each element is
increased, we find that at low electric field, i.e. in the single photon limit,
the loss is two level system in nature and is correlated with the amount of Al
capacitance rather than the Al inductance. In the high electric field limit,
the remaining loss is linearly related to the product of the Al area times its
inductance and is likely due to quasiparticles generated by stray radiation. At
elevated temperature, additional loss is correlated with the amount of Al in
the inductance, with a power independent TiN-Al interface loss term that
exponentially decreases as the temperature is reduced. The TiN-Al interface
loss is vanishingly small at the 50 mK base temperature.Comment: 10 pages, 5 figure
Characterization and In-situ Monitoring of Sub-stoichiometric Adjustable Tc Titanium Nitride Growth
The structural and electrical properties of Ti-N films deposited by reactive
sputtering depend on their growth parameters, in particular the Ar:N2 gas
ratio. We show that the nitrogen percentage changes the crystallographic phase
of the film progressively from pure \alpha-Ti, through an \alpha-Ti phase with
interstitial nitrogen, to stoichiometric Ti2N, and through a substoichiometric
TiNX to stoichiometric TiN. These changes also affect the superconducting
transition temperature, Tc, allowing, the superconducting properties to be
tailored for specific applications. After decreasing from a Tc of 0.4 K for
pure Ti down to below 50 mK at the Ti2N point, the Tc then increases rapidly up
to nearly 5 K over a narrow range of nitrogen incorporation. This very sharp
increase of Tc makes it difficult to control the properties of the film from
wafer-to-wafer as well as across a given wafer to within acceptable margins for
device fabrication. Here we show that the nitrogen composition and hence the
superconductive properties are related to, and can be determined by,
spectroscopic ellipsometry. Therefore, this technique may be used for process
control and wafer screening prior to investing time in processing devices
Distributed Voltage and Current Control of Multi-Terminal High-Voltage Direct Current Transmission Systems
High-voltage direct current (HVDC) is a commonly used technology for
long-distance power transmission, due to its low resistive losses and low
costs. In this paper, a novel distributed controller for multi-terminal HVDC
(MTDC) systems is proposed. Under certain conditions on the controller gains,
it is shown to stabilize the MTDC system. The controller is shown to always
keep the voltages close to the nominal voltage, while assuring that the
injected power is shared fairly among the converters. The theoretical results
are validated by simulations, where the affect of communication time-delays is
also studied
- …