Survey of Recent Florida Labor and Employment Law

In the last year or so, state and federal courts have decided a variety of cases in the areas of labor and employment under Florida law

Characterization of surface structure in sputtered Al films: Correlation to microstructure evolution

Quantitative roughness and microstructural analysis of as-deposited Al films, 0.1–1.0 μm thick, were performed by atomic force microscopy (AFM), one-dimensional power spectral density analysis (1DPSD), transmission electron microscopy, and x-ray pole figure methods. The variation of grain size (d) with thickness (h) in the columnar grained film was d∝h0.9.d∝h0.9. The initial crystallographic texture was nearly random, with a strong Al (111) fiber texture evolving by ≈0.2 μm in deposited thickness. AFM imaging revealed a surface structure with hillocks, grains, and grain boundary grooves, and periodic within-grain ridges extending over entire grains. The root-mean-square surface height variation (RRMS)(RRMS) initially decreased during deposition but increased as RRMS∝h0.55RRMS∝h0.55 from 0.3 to 1.0 μm thickness. The 1DPSD analysis revealed three spatially resolved regimes of roughness evolution; a frequency independent regime at low frequency attributed to hillock growth, an intermediate frequency self-similar regime attributed to grains and grain boundary grooves, and a high frequency self-similar regime attributed to within-grain ridges. Two characteristic dimensions (CD) were defined at the inverse frequencies of transition between each 1DPSD roughness regime. CDICDI at high frequency was identified as the peak-to-peak ridge spacing which remained independent of film thickness. The ridge spacing is proposed to represent the upper limit of an effective surface diffusion length (λ0)(λ0) due to the effects of surface diffusion and flux shadowing. The CDIICDII at lower frequency was identified as the grain size which increased with thickness. The evolution and interactions of roughness and microstructural features are discussed in terms of surface diffusion, grain boundary motion, and flux shadowing mechanisms. © 1999 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70172/2/JAPIAU-85-2-876-1.pd

The piezoresistance of aluminum alloy interconnect structures

The effects of applied strain on the resistivity of Al thin film metallization interconnects have been measured with a novel methodology that uses thermal expansion mismatch to produce the strain. The interconnect volumetric strain is induced by thermal cycling of passivated and unpassivated interconnects between ≈70 and 373 K. The coefficient of piezoresistivity, defined as dρ/dϵvdρ/dϵv, where ρ=resistivity and ϵvϵv=volumetric strain, is determined by properly accounting for the degree of interconnect constraint and thermal expansion mismatch strain induced during temperature changes. The volumetric strains are calculated for unpassivated and passivated lines of varying thickness and width. A model which incorporates the geometrical and piezoresistance effects on the measured interconnect resistance during temperature changes is described. The coefficient of piezoresistivity is calculated by a fitting procedure which provides an accurate and consistent fit for both unpassivated and passivated interconnects of different geometries and different strain states. The measured coefficient dρ/dϵvdρ/dϵv is 2.0×10−52.0×10−5 Ω cm in tension, similar to earlier results in bulk Al samples measured in compression but significantly higher than values recently measured in Al interconnects. The application of the calibrated coefficient of piezoresistivity for the measurement of electromigration-induced stresses in novel interconnect test structures will be described. © 1999 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70378/2/JAPIAU-85-3-1943-1.pd

Electron transport properties of sub-3-nm diameter copper nanowires

Density functional theory and density functional tight-binding are applied to model electron transport in copper nanowires of approximately 1 nm and 3 nm diameters with varying crystal orientation and surface termination. The copper nanowires studied are found to be metallic irrespective of diameter, crystal orientation and/or surface termination. Electron transmission is highly dependent on crystal orientation and surface termination. Nanowires oriented along the [110] crystallographic axis consistently exhibit the highest electron transmission while surface oxidized nanowires show significantly reduced electron transmission compared to unterminated nanowires. Transmission per unit area is calculated in each case, for a given crystal orientation we find that this value decreases with diameter for unterminated nanowires but is largely unaffected by diameter in surface oxidized nanowires for the size regime considered. Transmission pathway plots show that transmission is larger at the surface of unterminated nanowires than inside the nanowire and that transmission at the nanowire surface is significantly reduced by surface oxidation. Finally, we present a simple model which explains the transport per unit area dependence on diameter based on transmission pathways results

Local crystallographic texture and voiding in passivated copper interconnects

A correlation between local crystallographic texture and stress‐induced void formation in tantalum‐encapsulated, copper interconnects was revealed by electron backscattering diffraction studies in a scanning electron microscope. Lines exhibiting an overall stronger 〈111〉 texture showed better resistance to void formation. Furthermore, grains adjacent to voids exhibited weaker 〈111〉 texture than grains in unvoided regions of the same line. The locally weaker 〈111〉 texture at voided locations suggests the presence of higher diffusivity, twist boundaries. This work, which represents the first characterization of local texture in stress voided, copper lines, helps to elucidate the relative importance of the thermodynamic and kinetic factors which govern void formation and growth. © 1996 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70319/2/APPLAB-69-26-4017-1.pd

Analysis of grain-boundary structure in Al–Cu interconnects

The role of crystallographic texture in electromigration resistance of interconnect lines is well documented. The presence of a strong (111) fiber texture results in a more reliable interconnect structure. It is also generally accepted that grain-boundary diffusion is the primary mechanism by which electromigration failures occur. It has been difficult to this point, however, to obtain statistically reliable information of grain-boundary structure in these materials as transmission electron microscopy investigations are limited by tedious specimen preparation and small, nonrepresentative, imaging regions. The present work focuses upon characterization of texture and grain-boundary structure of interconnect lines using orientation imaging microscopy, and particularly, upon the linewidth dependence of these measures. Conventionally processed Al–1%Cu lines were investigated to determine the affects of a postpatterning anneal on boundary structure as a function of linewidth. It was observed that texture tended to strengthen slightly with decreasing linewidth subsequent to the anneal procedure. Grain morphology changed substantially as the narrow lines became near bamboo in character and the crystallographic character of the boundary plane changed as a function of linewidth. These results are contrasted with those obtained from Al–1%Cu lines, which were fabricated using the damascene process. The damascene lines show a marked weakening in texture as the linewidth decreases, accompanied by a more random misorientation distribution. A description of the competing energetics, which result in the observed microstructures, is included. © 1997 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/71133/2/JAPIAU-82-5-2383-1.pd

Two-temperature LATE-PCR endpoint genotyping

BACKGROUND: In conventional PCR, total amplicon yield becomes independent of starting template number as amplification reaches plateau and varies significantly among replicate reactions. This paper describes a strategy for reconfiguring PCR so that the signal intensity of a single fluorescent detection probe after PCR thermal cycling reflects genomic composition. The resulting method corrects for product yield variations among replicate amplification reactions, permits resolution of homozygous and heterozygous genotypes based on endpoint fluorescence signal intensities, and readily identifies imbalanced allele ratios equivalent to those arising from gene/chromosomal duplications. Furthermore, the use of only a single colored probe for genotyping enhances the multiplex detection capacity of the assay. RESULTS: Two-Temperature LATE-PCR endpoint genotyping combines Linear-After-The-Exponential (LATE)-PCR (an advanced form of asymmetric PCR that efficiently generates single-stranded DNA) and mismatch-tolerant probes capable of detecting allele-specific targets at high temperature and total single-stranded amplicons at a lower temperature in the same reaction. The method is demonstrated here for genotyping single-nucleotide alleles of the human HEXA gene responsible for Tay-Sachs disease and for genotyping SNP alleles near the human p53 tumor suppressor gene. In each case, the final probe signals were normalized against total single-stranded DNA generated in the same reaction. Normalization reduces the coefficient of variation among replicates from 17.22% to as little as 2.78% and permits endpoint genotyping with >99.7% accuracy. These assays are robust because they are consistent over a wide range of input DNA concentrations and give the same results regardless of how many cycles of linear amplification have elapsed. The method is also sufficiently powerful to distinguish between samples with a 1:1 ratio of two alleles from samples comprised of 2:1 and 1:2 ratios of the same alleles. CONCLUSION: SNP genotyping via Two-Temperature LATE-PCR takes place in a homogeneous closed-tube format and uses a single hybridization probe per SNP site. These assays are convenient, rely on endpoint analysis, improve the options for construction of multiplex assays, and are suitable for SNP genotyping, mutation scanning, and detection of DNA duplication or deletions

Tailoring Anderson localization by disorder correlations in 1D speckle potentials

We study Anderson localization of single particles in continuous, correlated, one-dimensional disordered potentials. We show that tailored correlations can completely change the energy-dependence of the localization length. By considering two suitable models of disorder, we explicitly show that disorder correlations can lead to a nonmonotonic behavior of the localization length versus energy. Numerical calculations performed within the transfer-matrix approach and analytical calculations performed within the phase formalism up to order three show excellent agreement and demonstrate the effect. We finally show how the nonmonotonic behavior of the localization length with energy can be observed using expanding ultracold-atom gases