45 research outputs found
Picosecond carrier dynamics induced by coupling of wavefunctions in a Si-nanodisk array fabricated by neutral beam etching using bio-nano-templates
The picosecond carrier dynamics in a closely packed Si-nanodisk (Si-ND) array with ultrathin potential barrier fabricated by neutral beam etching using bio-nano-templates was investigated by time-resolved photoluminescence (PL). The PL decay curves were analyzed as a function of photon energy by the global fitting method. We show three spectral components with different decay times, where the systematic energy differences of the spectral peaks are clarified: 2.03 eV for the fastest decaying component with a decay time τ = 40 ps, 2.02 eV for τ = 300 ps, and 2.00 eV for τ = 1.6 ns. These energy separations ranging from 10 to 30 meV among the emissive states can be attributed to the coupling of wavefunctions of carriers between neighboring NDs
A New Experimental Approach to Evaluate Plasma-induced Damage in Microcantilever
Plasma etching, during micro-fabrication processing is indispensable for fabricating MEMS structures. During the plasma processes, two major matters, charged ions and vacuum–ultraviolet (VUV) irradiation damage, take charge of reliability degradation. The charged ions induce unwanted sidewall etching, generally called as “notching”, which causes degradation in brittle strength. Furthermore, the VUV irradiation gives rise to crystal defects on the etching surface. To overcome the problem, neutral beam etching (NBE), which use neutral particles without the VUV irradiation, has been developed. In order to evaluate the effect of the NBE quantitatively, we measured the resonance property of a micro-cantilever before and after NBE treatment. The thickness of damage layer (δ) times the imaginary part of the complex Young's modulus (Eds) were then compared, which is a parameter of surface damage. Although plasma processes make the initial surface of cantilevers damaged during their fabrication, the removal of that damage by NBE was confirmed as the reduction in δEds. NBE will realize a damage-free surface for microstructures
A New Experimental Approach to Evaluate Plasma-induced Damage in Microcantilever
Plasma etching, during micro-fabrication processing is indispensable for fabricating MEMS structures. During the plasma processes, two major matters, charged ions and vacuum–ultraviolet (VUV) irradiation damage, take charge of reliability degradation. The charged ions induce unwanted sidewall etching, generally called as “notching”, which causes degradation in brittle strength. Furthermore, the VUV irradiation gives rise to crystal defects on the etching surface. To overcome the problem, neutral beam etching (NBE), which use neutral particles without the VUV irradiation, has been developed. In order to evaluate the effect of the NBE quantitatively, we measured the resonance property of a micro-cantilever before and after NBE treatment. The thickness of damage layer (δ) times the imaginary part of the complex Young's modulus (Eds) were then compared, which is a parameter of surface damage. Although plasma processes make the initial surface of cantilevers damaged during their fabrication, the removal of that damage by NBE was confirmed as the reduction in δEds. NBE will realize a damage-free surface for microstructures.Keywords: cantilever, neutral beam etching, surface los
Feature profile evolution in plasma processing using on-wafer monitoring system
This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described
Neutral oxygen beam treated ZnO-based resistive switching memory device
The room-temperature oxidation process allows irradiation with neutral oxygen particles onto the resistive layer that leads to the absorption of oxygen by the surface of the ZnO layer. The irradiation is effective in controlling the defect concentrations; thus, the ON and OFF resistances of devices can be significantly increased. These characteristics promote the occurrence of resistive switching at much lower current compliance as well as induce switching behavior in very thin ZnO films with thicknesses of 14–42 nm. The thickness dependence of the transformation from filamentary to homogeneous switching was also studied using the neutral beam technique, and the underlying mechanism is discussed