5,369 research outputs found

    Efficiently Learning from Revealed Preference

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    In this paper, we consider the revealed preferences problem from a learning perspective. Every day, a price vector and a budget is drawn from an unknown distribution, and a rational agent buys his most preferred bundle according to some unknown utility function, subject to the given prices and budget constraint. We wish not only to find a utility function which rationalizes a finite set of observations, but to produce a hypothesis valuation function which accurately predicts the behavior of the agent in the future. We give efficient algorithms with polynomial sample-complexity for agents with linear valuation functions, as well as for agents with linearly separable, concave valuation functions with bounded second derivative.Comment: Extended abstract appears in WINE 201

    Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography

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    An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for vertically oriented nanowire transistors. We report a method for producing laterally oriented wrap-gated nanowire field-effect transistors that provides exquisite control over the gate length via a single wet etch step, eliminating the need for additional lithography beyond that required to define the source/drain contacts and gate lead. It allows the contacts and nanowire segments extending beyond the wrap-gate to be controlled independently by biasing the doped substrate, significantly improving the sub-threshold electrical characteristics. Our devices provide stronger, more symmetric gating of the nanowire, operate at temperatures between 300 to 4 Kelvin, and offer new opportunities in applications ranging from studies of one-dimensional quantum transport through to chemical and biological sensing.Comment: 16 pages, 5 figures. Submitted version, published version available at http://http://pubs.acs.org/journal/nalef

    The Hall algebras of annuli

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    We refine and prove the central conjecture of our first paper for annuli with at least two marked intervals on each boundary component by computing the derived Hall algebras of their Fukaya categories

    Optimality of Profit-Including Prices Under Ideal Planning

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    Activity Dependent Branching Ratios in Stocks, Solar X-ray Flux, and the Bak-Tang-Wiesenfeld Sandpile Model

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    We define an activity dependent branching ratio that allows comparison of different time series XtX_{t}. The branching ratio bxb_x is defined as bx=E[ξx/x]b_x= E[\xi_x/x]. The random variable ξx\xi_x is the value of the next signal given that the previous one is equal to xx, so ξx={Xt+1Xt=x}\xi_x=\{X_{t+1}|X_t=x\}. If bx>1b_x>1, the process is on average supercritical when the signal is equal to xx, while if bx<1b_x<1, it is subcritical. For stock prices we find bx=1b_x=1 within statistical uncertainty, for all xx, consistent with an ``efficient market hypothesis''. For stock volumes, solar X-ray flux intensities, and the Bak-Tang-Wiesenfeld (BTW) sandpile model, bxb_x is supercritical for small values of activity and subcritical for the largest ones, indicating a tendency to return to a typical value. For stock volumes this tendency has an approximate power law behavior. For solar X-ray flux and the BTW model, there is a broad regime of activity where bx1b_x \simeq 1, which we interpret as an indicator of critical behavior. This is true despite different underlying probability distributions for XtX_t, and for ξx\xi_x. For the BTW model the distribution of ξx\xi_x is Gaussian, for xx sufficiently larger than one, and its variance grows linearly with xx. Hence, the activity in the BTW model obeys a central limit theorem when sampling over past histories. The broad region of activity where bxb_x is close to one disappears once bulk dissipation is introduced in the BTW model -- supporting our hypothesis that it is an indicator of criticality.Comment: 7 pages, 11 figure

    Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts

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    The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from |g*|=3.8 +/- 0.2 for the third subband to |g*|=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures.Comment: [Version 2] Revtex4, 11 pages, 3 figures, accepted for publication in Applied Physics Letter
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