SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes

Acord transformatiu CRUE-CSICThis work was supported by the Spanish Ministry of Science, Innovation, and Universities through projects TEC2017-84321-C4-1-R and TEC2017-84321-C4-4-R.This paper reports the use of the Quasi-static Memdiode Model (QMM) for simulating Complementary Resistive Switching (CRS) devices. CRS arises from the anti-serial connection of two memristors and it is used for generating low and high-resistance regions in the I-V characteristic with the aim of mitigating the sneak-path conduction problem in crossbar arrays. Here, the use of the QMM for CRS in the form of a six terminal subcircuit is explored. While two terminals of the subcircuit correspond to the conventional input and output pins of the CRS structure, the rest provide information about the voltage at the central node, the low-voltage conductance of each device, and the low-voltage conductance of the whole structure. Special attention is paid to the simulation of the so-called table with legs hysteresis loop (resistance at fixed bias vs. write voltage), which is often invoked in connection with devices that exhibit switching activity at the two interfaces of a single dielectric layer. Because of the internal potential drop distribution, the switching process takes place alternately at one side of the structure or the other giving rise to a pseudo-CRS behavior. The flexibility of the proposed approach is demonstrated through a series of fitting exercises that involve experimental data reported in the literature. The model script for the SPICE simulator is also provided

Perspectiva escolar

Resumen basado en el de la publicación. Monográfico con el título: 'Dones i educació'Se reflexiona sobre la práctica docente en cuestiones de nuevas Tecnologías de la Información y la Comunicación (TIC) relacionada con el género. Las TIC se asocian a roles masculinos y las chicas reciben un trato diferente por parte del profesorado en relación a estas tecnologías. La diferencia entre chicos y chicas en este ámbito radica en los usos que se hacen.CataluñaUniversitat de Barcelona. Biblioteca de Ciències de l'Educació; Passeig de la Vall d'Hebron, 171; 08035 Barcelona; +34934021035; +34934021034;ES

Variability in Resistive Memories

Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance have been notably improved in the last few years to cope with the requirements of massive industrial production. However, the most important hurdle to progress in their development is the so‐called cycle‐to‐cycle variability, which is inherently rooted in the resistive switching mechanism behind the operational principle of these devices. In order to achieve the whole picture, variability must be assessed from different viewpoints going from the experimental characterization to the adequation of modeling and simulation techniques. Herein, special emphasis is put on the modeling part because the accurate representation of the phenomenon is critical for circuit designers. In this respect, a number of approaches are used to the date: stochastic, behavioral, mesoscopic..., each of them covering particular aspects of the electron and ion transport mechanisms occurring within the switching material. These subjects are dealt with in this review, with the aim of presenting the most recent advancements in the treatment of variability in resistive memories