20 research outputs found

    Local Kondo temperatures in atomic chains

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    We study the effect of disorder in strongly interacting small atomic chains. Using the Kotliar- Ruckenstein slave-boson approach we diagonalize the Hamiltonian via scattering matrix theory. We numerically solve the Kondo transmission and the slave-boson parameters that allow us to calculate the Kondo temperature. We demonstrate that in the weak disorder regime, disorder in the energy levels of the dopants induces a non-screened disorder in the Kondo couplings of the atoms. We show that disorder increases the Kondo temperature of a perfect chain. We find that this disorder in the couplings comes from a local distribution of Kondo temperatures along the chain. We propose two experimental setups where the impact of local Kondo temperatures can be observed

    Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon

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    High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, 10510^5 electrically mediated single-qubit and 10410^4 dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed.Comment: 4 pages, 2 figure

    Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field

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    In this work we present a comprehensive theory of spin physics in planar Ge hole quantum dots in an in-plane magnetic field, where the orbital terms play a dominant role in qubit physics, and provide a brief comparison with experimental measurements of the angular dependence of electrically driven spin resonance. We focus the theoretical analysis on electrical spin operation, phonon-induced relaxation, and the existence of coherence sweet spots. We find that the choice of magnetic field orientation makes a substantial difference for the properties of hole spin qubits. Furthermore, although the Schrieffer-Wolff approximation can describe electron dipole spin resonance (EDSR), it does not capture the fundamental spin dynamics underlying qubit coherence. Specifically, we find that: (i) EDSR for in-plane magnetic fields varies non-linearly with the field strength and weaker than for perpendicular magnetic fields; (ii) The EDSR Rabi frequency is maximized when the a.c. electric field is aligned parallel to the magnetic field, and vanishes when the two are perpendicular; (iii) The Rabi ratio T1/TĎ€T_1/T_\pi, i.e. the number of EDSR gate operation per unit relaxation time, is expected to be as large as 5Ă—1055{\times}10^5 at the magnetic fields used experimentally; (iv) The orbital magnetic field terms make the in-plane gg-factor strongly anisotropic in a squeezed dot, in excellent agreement with experimental measurements; (v) The coherence sweet spots do not exist in an in-plane magnetic field, as the orbital magnetic field terms expose the qubit to all components of the defect electric field. These findings will provide a guideline for experiments to design ultrafast, highly coherent hole spin qubits in Ge
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