Laser-Photoacoustic Detection of Water Pollutants

We have investigated the potential of amplitude-modulation laser-photoacoustic scheme for the detection of trace pollutants in water. The technique has been found to be non-disturbing and easy-to-apply. In particular, the technique could be used to detect pollutants with a concentration corresponding to an absorption coefficient of 10-6cm-1. The sensitivity was found to be limited by a background signal resulting from light absorption by water. In addition to the amplitude-modulation scheme we also investigated the potential of a wavelength modulation scheme. Although this approach did reduce the background signal due to water absorption, we found the technique to be much more difficult to apply in practice

Coulomb interaction signatures in self-assembled lateral quantum dot molecules

We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaAs lateral quantum dot molecules. We apply a voltage along the growth direction that allows us to control the total charge occupancy of the quantum dot molecule. Using a combination of computational modeling and experimental analysis, we assign the observed discrete spectral lines to specific charge distributions. We explain the dynamic processes that lead to these charge configurations through electrical injection and optical generation. Our systemic analysis provides evidence of inter-dot tunneling of electrons as predicted in previous theoretical work.Comment: 9 pages, 4 figure

Nanoscale Footprints of Self-Running Gallium Droplets on GaAs Surface

In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001) surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems

High operating temperature mid-infrared InGaAs/GaAs submonolayer quantum dot quantum cascade detectors on silicon

Monolithic integration of infrared photodetectors on a silicon platform is a promising solution for the development of scalable and affordable photodetectors and infrared focal plane arrays. We report on integration of submonolayer quantum dot quantum cascade detectors (SML QD QCDs) on Si substrates via direct growth. Threading dislocation density has been reduced to the level of ~10 7 cm -2 with the high-quality GaAs-on-Si virtual substrate. We also conducted a morphology analysis for the SML QD QCDs through a transmission electron microscope strain contrast image and to the best of our knowledge, high quality InGaAs/GaAs SML QDs were clearly observed on silicon for the first time. Photoluminescence decay time of the as-grown SML QD QCDs on Si was measured to be around 300 ps, which is comparable to the reference QCDs on lattice-matched GaAs substrates. With the high-quality III-V epitaxial layers and SML QDs, the quantum cascade detectors on Si achieved a normal incident photoresponse temperature up to 160 K under zero bias

Diamagnetic and paramagnetic shifts in self-assembled InAs lateral quantum dot molecules

We uncover the underlying physics that explains the energy shifts of discrete states of individual InAs lateral quantum dot molecules (LQDMs) as a function of magnetic fields applied in the Faraday geometry. We observe that ground states of the LQDM exhibit a diamagnetic shift while excited states exhibit a paramagnetic shift. We explain the physical origin of the transition between these two behaviors by analyzing the molecular exciton states with effective mass calculations. We find that charge carriers in delocalized molecular states can become localized in single QDs with increasing magnetic field. We further show that the net effects of broken symmetry of the molecule and Coulomb correlation lead to the paramagnetic response.NSF DMR-0844747 DMR 1309989 GV VALi+d Grant APOSTD/2013/052 NRF of Korea 2011-C0030821/2013R1A1A1007118 MINECO Project CTQ2011-2732

Photorefractive self-focusing and defocusing as an optical limiter

Focusing and defocusing of laser light has been observed for many years. Kerr type materials exhibit this effect but only for high intensities. We show experimental evidence that photorefractive materials can also produce dramatic focusing and defocusing. Whereas Kerr materials produce this effect for high intensities, photorefractive materials produce these effects independent of intensity indicating that this effect would be ideal for an optical limiter. We compare the characteristics of Kerr and photorefractive materials, discuss the physical models for both materials and present experimental evidence for photorefractive defocusing. Self-focusing and defocusing was observed for any incident polarization although the effect was more pronounced using extraordinary polarized light. In addition, self-focusing or defocusing could be observed depending on the direction of the applied electric field. When the applied field was in the same direction as the crystal spontaneous polarization, focusing was observed. When the applied field was opposite the material spontaneous polarization, the incident laser light was dramatically defocused

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively. At low temperature, interface fluctuations result in the 7-nm QW PL exhibiting a blueshift of 15 meV, a narrowing of the linewidth (full width at half maximum, FWHM) from 20.3 to 10 meV, and a clear transition of the spectral profile with the laser excitation intensity increasing four orders in magnitude. The 7-nm QW PL also has a larger blueshift and FWHM variation than the 15-nm QW as the temperature increases from 10 to ~50 K. Finally, simulations of this system which correlate with the experimental observations indicate that a thin QW must be more affected by interface fluctuations and their resulting potential fluctuations than a thick QW. This work provides useful information on guiding the growth to achieve optimized InGaAs/InAlAs QWs for applications with different QW thicknesses