Phase transitions and doping in semiconductor nanocrystals

University of Minnesota Ph.D. dissertation. November 2012. Major: Chemical Engineering. Advisor: David J. Norris. 1 computer file (PDF); xiii, 252 pages.Colloidal semiconductor nanocrystals are a promising technological material because their size-dependent optical and electronic properties can be exploited for a diverse range of applications such as light-emitting diodes, bio-labels, transistors, and solar cells. For many of these applications, electrical current needs to be transported through the devices. However, while their solution processability makes these colloidal nanocrystals attractive candidates for device applications, the bulky surfactants that render these nanocrystals dispersible in common solvents block electrical current. Thus, in order to realize the full potential of colloidal semiconductor nanocrystals in the next-generation of solid-state devices, methods must be devised to make conductive films from these nanocrystals. One way to achieve this would be to add minute amounts of foreign impurity atoms (dopants) to increase their conductivity. Electronic doping in nanocrystals is still very much in its infancy with limited understanding of the underlying mechanisms that govern the doping process. This thesis introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This thesis also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important applications.In addition to their size-dependence, the intentional incorporation of impurities (or doping) allows further control over the electrical and optical properties of nanocrystals. However, while impurity doping in bulk semiconductors is now routine, doping of nanocrystals remains challenging. In particular, evidence for electronic doping, in which additional electrical carriers are introduced into the nanocrystals, has been very limited. Here, we adopt a new approach to electronic doping of nanocrystals. We utilize a partial cation exchange to introduce silver impurities into cadmium selenide (CdSe) and lead selenide (PbSe) nanocrystals. Results indicate that the silver-doped CdSe nanocrystals show a significant increase in fluorescence intensity, as compared to pure CdSe nanocrystals. We also observe a switching from n- to p-type doping in the silver-doped CdSe nanocrystals with increased silver amounts. Moreover, the silver-doping results in a change in the conductance of both PbSe and CdSe nanocrystals and the magnitude of this change depends on the amount of silver incorporated into the nanocrystals. In the bulk, silver chalcogenides (Ag2E, E=S, Se, and Te) possess a wide array of intriguing properties, including superionic conductivity. In addition, they undergo a reversible temperature-dependent phase transition which induces significant changes in their electronic and ionic properties. While most of these properties have been examined extensively in bulk, very few studies have been conducted at the nanoscale. We have recently developed a versatile synthesis that yields colloidal silver chalcogenide nanocrystals. Here, we study the size dependence of their phase-transition temperatures. We utilize differential scanning calorimetry and in-situ X-ray diffraction analyses to observe the phase transition in nanocrystal assemblies. We observe a significant deviation from the bulk α (low-temperature) to β (high-temperature) phase-transition temperature when we reduce their size to a few nanometers. Hence, these nanocrystals provide great potential for devices to utilize the properties of both phases at a significantly lower temperature than that of the corresponding bulk material. Moreover, a wide range of properties of both phases that meet specific requirements can be obtained simply by tuning the crystal size

In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks.

Thermoelectric devices possess enormous potential to reshape the global energy landscape by converting waste heat into electricity, yet their commercial implementation has been limited by their high cost to output power ratio. No single "champion" thermoelectric material exists due to a broad range of material-dependent thermal and electrical property optimization challenges. While the advent of nanostructuring provided a general design paradigm for reducing material thermal conductivities, there exists no analogous strategy for homogeneous, precise doping of materials. Here, we demonstrate a nanoscale interface-engineering approach that harnesses the large chemically accessible surface areas of nanomaterials to yield massive, finely-controlled, and stable changes in the Seebeck coefficient, switching a poor nonconventional p-type thermoelectric material, tellurium, into a robust n-type material exhibiting stable properties over months of testing. These remodeled, n-type nanowires display extremely high power factors (~500 µW m-1K-2) that are orders of magnitude higher than their bulk p-type counterparts

Colloidal quantum dots for thermal infrared sensing and imaging

Abstract Colloidal quantum dots provide a powerful materials platform to engineer optoelectronics devices, opening up new opportunities in the thermal infrared spectral regions where no other solution-processed material options exist. This mini-review collates recent research reports that push the technological envelope of colloidal quantum dot-based photodetectors toward mid- and long-wavelength infrared. We survey the synthesis and characterization of various thermal infrared colloidal quantum dots reported to date, discuss the basic theory of device operation, review the fabrication and measurement of photodetectors, and conclude with the future prospect of this emerging technology

Localization of Ag Dopant Atoms in CdSe Nanocrystals by Reverse Monte Carlo Analysis of EXAFS Spectra

The structure of CdSe nanocrystals doped with 0.2%−2.5% Ag cor- responding to 1.1−13.6 Ag atoms per nanocrystal is studied in detail by a combination of X-ray diffraction (XRD) and X-ray absorption spectroscopy at the Ag−K, Cd−K, and Se−K edges. X-ray absorption near-edge structure (XANES) data are compared with ab initio multiple scattering simulations. Extended X-ray absorption fine structure (EXAFS) spectra are analyzed by reverse Monte Carlo (RMC) simulations. The XANES data provide evi- dence that Ag is located inside the CdSe nanocrystals, and the EXAFS spectra show that the local structure of Ag can be described by tetrahedral interstitial sites in either wurtzite or zinc blende lattices similar to the coordination of Ag in Ag$_2$Se

Long-Range Order in Nanocrystal Assemblies Determines Charge Transport of Films.

Self-assembly of semiconductor nanocrystals (NCs) into two-dimensional patterns or three-dimensional (2-3D) superstructures has emerged as a promising low-cost route to generate thin-film transistors and solar cells with superior charge transport because of enhanced electronic coupling between the NCs. Here, we show that lead sulfide (PbS) NCs solids featuring either short-range (disordered glassy solids, GSs) or long-range (superlattices, SLs) packing order are obtained solely by controlling deposition conditions of colloidal solution of NCs. In this study, we demonstrate the use of the evaporation-driven self-assembly method results in PbS NC SL structures that are observed over an area of 1 mm × 100 μm, with long-range translational order of up to 100 nm. A number of ordered domains appear to have nucleated simultaneously and grown together over the whole area, imparting a polycrystalline texture to the 3D SL films. By contrast, a conventional, optimized spin-coating deposition method results in PbS NC glassy films with no translational symmetry and much shorter-range packing order in agreement with state-of-the-art reports. Further, we investigate the electronic properties of both SL and GS films, using a field-effect transistor configuration as a test platform. The long-range ordering of the PbS NCs into SLs leads to semiconducting NC-based solids, the mobility (μ) of which is 3 orders of magnitude higher than that of the disordered GSs. Moreover, although spin-cast GSs of PbS NCs have weak ambipolar behavior with limited gate tunability, SLs of PbS NCs show a clear p-type behavior with significantly higher conductivities

n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication

The p-n junction is one of the fundamental requirements for a practical semiconductor-based electronic device. Designing a heterojunction comprising of dissimilar p-type and n-type semiconductors calls for careful energy level considerations, both when selecting the semiconductor materials as well as the metal contacts. A homojunction based on a single semiconductor simplifies this task, as energy levels of the p-type and n-type materials are already fairly similar, allowing for easier selection of contacts. Traditionally, homojunctions rely on doping of a bulk semiconductor to achieve p- and n-type transport through controlled addition of aliovalent dopants via energy-intensive processes such as ion implantation or thermal annealing. Exact control of doping in nanocrystalline semiconductors is significantly more challenging, due to self-purification effects. However, owing to their large surface areas, surface moieties can be utilized to both dope the nanostructures as well as tune their energy levels. In this report, we present a facile technique based on an isoelectronic surface dopant in order to achieve p- and n-type materials based on the same semiconductor. We show that thin p-type colloidal Bi2Te3 nanowires can be switched to n-type through surface functionalization, thus increasing the availability of new nanocrystalline solution-processable p-n homojunctions

Evolution of the Nanostructure and Viscoelastic Properties of Nitrile Rubber upon Mechanical Rejuvenation and Physical Aging

International audienceExtending the mechanical lifetime of NBR (i.e., poly(acrylonitrile-co-butadiene)), a large-volume synthetic rubber, requires a better understanding of its structure–property relationships. We demonstrate that industrial-grade and uncross-linked NBR can be mechanically rejuvenated and physically aged due to an inhomogeneous distribution of monomers along the polymer chains. As opposed to its nonpolar SBR counterpart (i.e., poly(styrene-co-butadiene)), NBR experiences thermodynamic driving forces for microphase separation and kinetic barriers for processing like those of block copolymers. Extruding NBR at high temperature and shear results in a weakly microphase-separated nanostructure of low relaxation time and resistance to flow, whereas physically aging NBR leads to lamellar nanodomains, a more solid-like material, and delayed stress relaxation. This effect of rejuvenation and aging on the nanostructure and rheological properties of NBR has important consequences on processing and storage conditions, such as the formation of defect-free interfaces in multilayered parts by polymer interdiffusion