Approximation of quantum control correction scheme using deep neural networks

We study the functional relationship between quantum control pulses in the idealized case and the pulses in the presence of an unwanted drift. We show that a class of artificial neural networks called LSTM is able to model this functional relationship with high efficiency, and hence the correction scheme required to counterbalance the effect of the drift. Our solution allows studying the mapping from quantum control pulses to system dynamics and then analysing the robustness of the latter against local variations in the control profile.Comment: 6 pages, 3 figures, Python code available upon request. arXiv admin note: text overlap with arXiv:1803.0516

Dirac fermions at the H point of graphite: Magneto-transmission studies

We report on far infrared magneto-transmission measurements on a thin graphite sample prepared by exfoliation of highly oriented pyrolytic graphite. In magnetic field, absorption lines exhibiting a blue-shift proportional to sqrtB are observed. This is a fingerprint for massless Dirac holes at the H point in bulk graphite. The Fermi velocity is found to be c*=1.02x10^6 m/s and the pseudogap at the H point is estimated to be below 10 meV. Although the holes behave to a first approximation as a strictly 2D gas of Dirac fermions, the full 3D band structure has to be taken into account to explain all the observed spectral features.Comment: 4 pages, 4 figures, to appear in Phys. Rev. Let

Landau level spectroscopy of ultrathin graphite layers

Far infrared transmission experiments are performed on ultrathin epitaxial graphite samples in a magnetic field. The observed cyclotron resonance-like and electron-positron-like transitions are in excellent agreement with the expectations of a single-particle model of Dirac fermions in graphene, with an effective velocity of c* = 1.03 x 10^6 m/s.Comment: 4 pages 4 figures Slight revisions following referees' comments. One figure modifie

Ferromagnetism and interlayer exchange coupling in short period (Ga,Mn)As/GaAs superlattices

Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of non-magnetic GaAs spacer. The short period Ga$_{0.93}$Mn$_{0.07}$As/GaAs superlattices exhibit a paramagnetic-to-ferromagnetic phase transition close to 60K, for thicknesses of (Ga,Mn)As down to 23 \AA. For Ga$_{0.96}$Mn$_{0.04}$As/GaAs superlattices of similar dimensions, the Curie temperature associated with the ferromagnetic transition is found to oscillate with the thickness of non magnetic spacer. The observed oscillations are related to an interlayer exchange interaction mediated by the polarized holes of the (Ga,Mn)As layers.Comment: REVTeX 4 style; 4 pages, 2 figure

Mn induced modifications of Ga 3d photoemission from (Ga, Mn)As: evidence for long range effects

Using synchrotron based photoemission, we have investigated the Mn-induced changes in Ga 3d core level spectra from as-grown ${\rm Ga}_{1-x}{\rm Mn}_{x}{\rm As}$. Although Mn is located in Ga substitutional sites, and does therefore not have any Ga nearest neighbours, the impact of Mn on the Ga core level spectra is pronounced even at Mn concentrations in the range of 0.5%. The analysis shows that each Mn atom affects a volume corresponding to a sphere with around 1.4 nm diameter.Comment: Submitted to Physical Review B, Brief Repor

Hole-LO phonon interaction in InAs/GaAs quantum dots

We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using far-infrared magneto-optical technique with polarized radiation. We show that a purely electronic model is unable to account for the experimental data. We calculate the coupling between the mixed hole LO-phonon states using the Fr\"ohlich Hamiltonian, from which we determine the polaron states as well as the energies and oscillator strengths of the valence intraband transitions. The good agreement between the experiments and calculations provides strong evidence for the existence of hole-polarons and demonstrates that the intraband magneto-optical transitions occur between polaron states

Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As): Magnetic and Magneto-Transport Investigations

Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Postgrowth annealing treatment has been shown to enhance the hole concentration and Curie temperature in the layers. Significant increase in the magnitude of magnetotransport effects caused by incorporation of a small amount of Bi into the (Ga,Mn)As layers revealed in the planar Hall effect (PHE) measurements, is interpreted as a result of enhanced spin-orbit coupling in the (Ga,Mn)(Bi,As) layers. Two-state behaviour of the planar Hall resistance at zero magnetic field provides its usefulness for applications in nonvolatile memory devices.Comment: 10 pages, 3 figures, to be published in the Proceedings of ICSM-2016 conferenc

EFFECTS OF REARING ENVIRONMENT ON BEHAVIOR OF CAPTIVE-REARED WHOOPING CRANES

Whooping cranes (Grus americana) are 1 of the most endangered bird species in North America. In 1999 the Whooping Crane Eastern Partnership was formed to establish a migratory population of whooping cranes in eastern North America. These efforts have been extremely successful in terms of adult survival but reproductive success post-release has been low. One hypothesis developed to explain such low reproductive success is that captive-rearing techniques fail to prepare the birds to be effective parents. Captive-reared whooping cranes at the U.S. Geological Survey, Patuxent Wildlife Research Center, Laurel, Maryland, are either reared by humans in crane costumes or by surrogate conspecific adults. We hypothesized that the 2 captive-rearing techniques differentially shaped chick behavior. To test this, we measured chick behavior daily as well as when chicks were placed in novel environments. Twice per day, every day, 5-minute focal observations were conducted on each chick. When they were introduced to a novel environment, 10-minute focal observations were conducted within 1 hour of introduction. The 2 groups differed significantly: costume-reared chicks were, on average, more stationary than parent-reared birds. These data suggest that future research should be done to determine whether or not rearing technique could have longterm effects on post-release behavior and reproductive success

Ab initio calculation of the CdSe/CdTe heterojunction band offset using the local-density approximation-1/2 technique with spin-orbit corrections

We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe and of their interface. We employed the local-density approximation-1/2 self-energy correction scheme [L. G. Ferreira, M. Marques, and L. K. Teles, Phys. Rev. B 78, 125116 (2008)] to obtain improved band gaps and band offsets, as well as spin-orbit coupling to further correct the valence band edges. Our results are in good agreement with experimental values for bulk band gaps and reproduce the staggered band alignment characteristic of this system. We found that the spin-orbit effect is of considerable importance for the bulk band gaps, but has little impact on the band offset of this particular system. Moreover, the electronic structure calculated along the 61.4 Å transition region across the CdSe/CdTe interface shows a non-monotonic variation of the bandgap in the range 0.8-1.8 eV. This finding may have important implications to the absorption of light along the interface between these two materials in photovoltaic applications1117FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP2006/05858-

Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc

We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier.Comment: 13 pages, 4 figure