769 research outputs found
Characterizing the Existence of Optimal Proof Systems and Complete Sets for Promise Classes.
In this paper we investigate the following two questions: Q1: Do there exist optimal proof systems for a given language L? Q2: Do there exist complete problems for a given promise class C? For concrete languages L (such as TAUT or SAT) and concrete promise classes C (such as NP∩coNP, UP, BPP, disjoint NP-pairs etc.), these ques-tions have been intensively studied during the last years, and a number of characterizations have been obtained. Here we provide new character-izations for Q1 and Q2 that apply to almost all promise classes C and languages L, thus creating a unifying framework for the study of these practically relevant questions. While questions Q1 and Q2 are left open by our results, we show that they receive affirmative answers when a small amount on advice is avail-able in the underlying machine model. This continues a recent line of research on proof systems with advice started by Cook and Kraj́ıček [6]
Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As): Magnetic and Magneto-Transport Investigations
Magnetic and magneto-transport properties of thin layers of the
(Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the
low-temperature molecular-beam epitaxy technique on GaAs substrates have been
investigated. Ferromagnetic Curie temperature and magneto-crystalline
anisotropy of the layers have been examined by using magneto-optical Kerr
effect magnetometry and low-temperature magneto-transport measurements.
Postgrowth annealing treatment has been shown to enhance the hole concentration
and Curie temperature in the layers. Significant increase in the magnitude of
magnetotransport effects caused by incorporation of a small amount of Bi into
the (Ga,Mn)As layers revealed in the planar Hall effect (PHE) measurements, is
interpreted as a result of enhanced spin-orbit coupling in the (Ga,Mn)(Bi,As)
layers. Two-state behaviour of the planar Hall resistance at zero magnetic
field provides its usefulness for applications in nonvolatile memory devices.Comment: 10 pages, 3 figures, to be published in the Proceedings of ICSM-2016
conferenc
Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc
We demonstrate that in situ post-growth annealing of GaMnAs layers under As
capping is adequate for achieving high Curie temperatures (Tc) in a similar way
as ex situ annealing in air or in N2 atmosphere practiced earlier.Comment: 13 pages, 4 figure
Spatially controlled formation of superparamagnetic (Mn,Ga)As nanocrystals in high temperature annealed (Ga,Mn)As/GaAs superlattices
The annealing-induced formation of (Mn,Ga)As nanocrystals in (Ga,Mn)As/GaAs
superlattices was studied by X-ray diffraction, transmission electron
microscopy and magnetometry. The superlattice structures with 50 A thick
(Ga,Mn)As layers separated by 25, 50 and 100 A thick GaAs spacers were grown by
molecular beam epitaxy at low temperature (250 C), and then annealed at high
temperatures of: 400, 560 and 630 C. The high temperature annealing causes
decomposition to GaMnAs ternary alloy and formation of (Mn,Ga)As nanocrystals
inside the GaAs matrix. The nanocrystals are confined in the planes that were
formerly occupied by (Ga,Mn)As layers for up to the 560 C of annealing and
diffuse throughout the GaAs spacer layers at 630 C annealing. The corresponding
magnetization measurements show the evolution of the magnetic properties of
as-grown and annealed samples from ferromagnetic, through superparamagnetic to
the combination of both.Comment: 14 pages, 3 figure
Photoreflectance Study of the Fundamental Optical Properties of (Ga,Mn)As Epitaxial Films
Fundamental optical properties of thin films of (Ga,Mn)As diluted
ferromagnetic semiconductor with a low (1%) and high (6%) Mn content and of a
reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been
investigated by photoreflectance (PR) spectroscopy. In addition, the films were
subjected to complementary characterization by means of superconducting quantum
interference device (SQUID) magnetometry, Raman spectroscopy, and high
resolution X-ray diffractometry. Thorough full-line-shape analysis of the PR
spectra, which enabled determination of the E0 electronic transition in
(Ga,Mn)As, revealed significant differences between the energy band structures
in vicinity of the {\Gamma} point of the Brillouin zone for the two (Ga,Mn)As
films. In view of the obtained experimental results the evolution of the
valence band structure in (Ga,Mn)As with increasing Mn content is discussed,
pointing to a merging the Mn-related impurity band with the host GaAs valence
band for high Mn content.Comment: 21 pages, 6 figure
The deduction theorem for strong propositional proof systems
This paper focuses on the deduction theorem for propositional logic. We define and investigate different deduction properties and show that the presence of these deduction properties for strong proof systems is powerful enough to characterize the existence of optimal and even polynomially bounded proof systems. We also exhibit a similar, but apparently weaker condition that implies the existence of complete disjoint NP-pairs. In particular, this yields a sufficient condition for the completeness of the canonical pair of Frege systems and provides a general framework for the search for complete NP-pairs
Ferromagnetism and Electronic Structure of (Ga,Mn)As:Bi and (Ga,Mn)As Epitaxial Layers
The photoreflectance (PR) spectroscopy was applied to study the band-structure in GaAs:Bi, (Ga,Mn)As and (Ga,Mn)As:Bi layers with the 4% of Mn and 1 % of Bi content and, as a reference, undoped GaAs layer. All films were grown by low temperature (LT) MBE on semi-insulating (001) GaAs substrates. Photoreflec-tance studies were supported by Raman spectroscopy and high resolution X-ray diffractometry (XRD) measurements. Magnetic properties of the films were characterized with a superconducting quantum in-terference device (SQUID) magnetometer. Our findings were interpreted in terms of the model, which as-sumes that the mobile holes residing in the valence band of GaAs and the Fermi level position determined by the concentration of valence-band holes.
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