Quantum Hall to Insulator Transition in the Bilayer Quantum Hall Ferromagnet

We describe a new phase transition of the bilayer quantum Hall ferromagnet at filling fraction $\nu = 1$. In the presence of static disorder (modeled by a periodic potential), bosonic $S=1/2$ spinons can undergo a superfluid-insulator transition while preserving the ferromagnetic order. The Mott insulating phase has an emergent U(1) photon, and the transition is between Higgs and Coulomb phases of this photon. Physical consequences for charge and counterflow conductivity, and for interlayer tunneling conductance in the presence of quenched disorder are discussed.Comment: 4 pages, no figure

Metallic spin glasses

Recent work on the zero temperature phases and phase transitions of strongly random electronic system is reviewed. The transition between the spin glass and quantum paramagnet is examined, for both metallic and insulating systems. Insight gained from the solution of infinite range models leads to a quantum field theory for the transition between a metallic quantum paramagnetic and a metallic spin glass. The finite temperature phase diagram is described and crossover functions are computed in mean field theory. A study of fluctuations about mean field leads to the formulation of scaling hypotheses.Comment: Contribution to the Proceedings of the ITP Santa Barbara conference on Non-Fermi liquids, 25 pages, requires IOP style file

Putting competing orders in their place near the Mott transition

We describe the localization transition of superfluids on two-dimensional lattices into commensurate Mott insulators with average particle density p/q (p, q relatively prime integers) per lattice site. For bosons on the square lattice, we argue that the superfluid has at least q degenerate species of vortices which transform under a projective representation of the square lattice space group (a PSG). The formation of a single vortex condensate produces the Mott insulator, which is required by the PSG to have density wave order at wavelengths of q/n lattice sites (n integer) along the principle axes; such a second-order transition is forbidden in the Landau-Ginzburg-Wilson framework. We also discuss the superfluid-insulator transition in the direct boson representation, and find that an interpretation of the quantum criticality in terms of deconfined fractionalized bosons is only permitted at special values of q for which a permutative representation of the PSG exists. We argue (and demonstrate in detail in a companion paper: L. Balents et al., cond-mat/0409470) that our results apply essentially unchanged to electronic systems with short-range pairing, with the PSG determined by the particle density of Cooper pairs. We also describe the effect of static impurities in the superfluid: the impurities locally break the degeneracy between the q vortex species, and this induces density wave order near each vortex. We suggest that such a theory offers an appealing rationale for the local density of states modulations observed by Hoffman et al. (cond-mat/0201348) in STM studies of the vortex lattice of BSCCO, and allows a unified description of the nucleation of density wave order in zero and finite magnetic fields. We note signatures of our theory that may be tested by future STM experiments.Comment: 35 pages, 16 figures; (v2) part II is cond-mat/0409470; (v3) added new appendix and clarifying remarks; (v4) corrected typo

4D-XY quantum criticality in a doped Mott insulator

A new phenomenology is proposed for the superfluid density of strongly underdoped cuprate superconductors based on recent data for ultra-clean single crystals of YBCO. The data feature a puzzling departure from Uemura scaling and a decline of the slope as the T_c = 0 quantum critical point is approached. We show that this behavior can be understood in terms of the renormalization of quasiparticle effective charge by quantum fluctuations of the superconducting phase as described by a (3+1)-dimensional XY model. We calculate the renormalization of the superfluid density and its slope, explain the new phenomenology, and predict its eventual demise close to the QCP.Comment: Version published in PRL. For additional info and related work visit http://www.physics.ubc.ca/~fran

Bridging the Testing Speed Gap: Design for Delay Testability

The economic testing of high-speed digital ICs is becoming increasingly problematic. Even advanced, expensive testers are not always capable of testing these ICs because of their high-speed limitations. This paper focuses on a design for delay testability technique such that high-speed ICs can be tested using inexpensive, low-speed ATE. Also extensions for possible full BIST of delay faults are addresse

A low-speed BIST framework for high-performance circuit testing

Testing of high performance integrated circuits is becoming increasingly a challenging task owing to high clock frequencies. Often testers are not able to test such devices due to their limited high frequency capabilities. In this article we outline a design-for-test methodology such that high performance devices can be tested on relatively low performance testers. In addition, a BIST framework is discussed based on this methodology. Various implementation aspects of this technique are also addresse

Solving the puzzle of an unconventional phase transition for a 2d dimerized quantum Heisenberg model

Motivated by the indication of a new critical theory for the spin-1/2 Heisenberg model with a spatially staggered anisotropy on the square lattice as suggested in \cite{Wenzel08}, we re-investigate the phase transition of this model induced by dimerization using first principle Monte Carlo simulations. We focus on studying the finite-size scaling of $\rho_{s1} 2L$ and $\rho_{s2} 2L$, where $L$ stands for the spatial box size used in the simulations and $\rho_{si}$ with $i \in \{1,2\}$ is the spin-stiffness in the $i$-direction. Remarkably, while we do observe a large correction to scaling for the observable $\rho_{s1}2L$ as proposed in \cite{Fritz11}, the data for $\rho_{s2}2L$ exhibit a good scaling behavior without any indication of a large correction. As a consequence, we are able to obtain a numerical value for the critical exponent $\nu$ which is consistent with the known O(3) result with moderate computational effort. Specifically, the numerical value of $\nu$ we determine by fitting the data points of $\rho_{s2}2L$ to their expected scaling form is given by $\nu=0.7120(16)$, which agrees quantitatively with the most accurate known Monte Carlo O(3) result $\nu = 0.7112(5)$. Finally, while we can also obtain a result of $\nu$ from the observable second Binder ratio $Q_2$ which is consistent with $\nu=0.7112(5)$, the uncertainty of $\nu$ calculated from $Q_2$ is more than twice as large as that of $\nu$ determined from $\rho_{s2}2L$.Comment: 7 figures, 1 table; brief repor

Itinerant-localized dual character of a strongly-correlated superfluid Bose gas in an optical lattice

We investigate a strongly-correlated Bose gas in an optical lattice. Extending the standard-basis operator method developed by Haley and Erdos to a boson Hubbard model, we calculate excitation spectra in the superfluid phase, as well as in the Mott insulating phase, at T=0. In the Mott phase, the excitation spectrum has a finite energy gap, reflecting the localized character of atoms. In the superfluid phase, the excitation spectrum is shown to have an itinerant-localized dual structure, where the gapless Bogoliubov mode (which describes the itinerant character of superfluid atoms) and a band with a finite energy gap coexist. We also show that the rf-tunneling current measurement would give a useful information about the duality of a strongly-correlated superfluid Bose gas near the superfluid-insulator transition.Comment: 10 pages, 4 figure

Trends and challenges in VLSI technology scaling towards 100 nm

Summary form only given. Moore's Law drives VLSI technology to continuous increases in transistor densities and higher clock frequencies. This tutorial will review the trends in VLSI technology scaling in the last few years and discuss the challenges facing process and circuit engineers in the 100nm generation and beyond. The first focus area is the process technology, including transistor scaling trends and research activities for the 100nm technology node and beyond. The transistor leakage and interconnect RC delays will continue to increase. The tutorial will review new circuit design techniques for emerging process technologies, including dual Vt transistors and silicon-on-insulator. It will also cover circuit and layout techniques to reduce clock distribution skew and jitter, model and reduce transistor leakage and improve the electrical performance of flip-chip packages. Finally, the tutorial will review the test challenges for the 100nm technology node due to increased clock frequency and power consumption (both active and passive) and present several potential solution

Quantum phase transitions in bilayer SU(N) anti-ferromagnets

We present a detailed study of the destruction of SU(N) magnetic order in square lattice bilayer anti-ferromagnets using unbiased quantum Monte Carlo numerical simulations and field theoretic techniques. We study phase transitions from an SU(N) N\'eel state into two distinct quantum disordered "valence-bond" phases: a valence-bond liquid (VBL) with no broken symmetries and a lattice-symmetry breaking valence-bond solid (VBS) state. For finite inter-layer coupling, the cancellation of Berry phases between the layers has dramatic consequences on the two phase transitions: the N\'eel-VBS transition is first order for all $N\geq5$ accesible in our model, whereas the N\'eel-VBL transition is continuous for N=2 and first order for N>= 4; for N=3 the N\'eel-VBL transition show no signs of first-order behavior