Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

Stress and its effects on optical properties of GaN epilayers grown in Si(111), 6H-SiC(0001), and c-plane sapphire were investigated. Large tensile stress was present in GaN epilayers grown on Si and 6H-SiC, and a small compressive stress appeared in the film grown on sapphire. The results showed that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films.published_or_final_versio

Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of AuGaN Schottky contacts

Under identical preparation conditions, AuGaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers. © 2006 American Institute of Physics.published_or_final_versio

Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts

Author name used in this publication: X. M. Tao2006-2007 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be ∼0.2 and 200 cm-1, respectively, for the InGaN QDs. © 2006 American Institute of Physics.published_or_final_versio

Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts

Author name used in this publication: X. M. Tao2006-2007 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Cell-cycle-dependent transcriptional and translational DNA-damage response of 2 ribonucleotide reductase genes in S. cerevisiae

The ribonucleotide reductase (RNR) enzyme catalyzes an essential step in the production of deoxyribonucleotide triphosphates (dNTPs) in cells. Bulk biochemical measurements in synchronized Saccharomyces cerevisiae cells suggest that RNR mRNA production is maximal in late G1 and S phases; however, damaged DNA induces RNR transcription throughout the cell cycle. But such en masse measurements reveal neither cell-to-cell heterogeneity in responses nor direct correlations between transcript and protein expression or localization in single cells which may be central to function. We overcame these limitations by simultaneous detection of single RNR transcripts and also Rnr proteins in the same individual asynchronous S. cerevisiae cells, with and without DNA damage by methyl methanesulfonate (MMS). Surprisingly, RNR subunit mRNA levels were comparably low in both damaged and undamaged G1 cells and highly induced in damaged S/G2 cells. Transcript numbers became correlated with both protein levels and localization only upon DNA damage in a cell cycle-dependent manner. Further, we showed that the differential RNR response to DNA damage correlated with variable Mec1 kinase activity in the cell cycle in single cells. The transcription of RNR genes was found to be noisy and non-Poissonian in nature. Our results provide vital insight into cell cycle-dependent RNR regulation under conditions of genotoxic stress.Massachusetts Institute of Technology. Center for Environmental Health Sciences (deriving from NIH P30-ES002109)National Institutes of Health (U.S.) (grant R01-CA055042)National Institutes of Health (U.S.) (grant DP1-OD006422)Massachusetts Institute of Technology (CSBi Merck-MIT Fellowship

Casimir forces on a silicon micromechanical chip

Quantum fluctuations give rise to van der Waals and Casimir forces that dominate the interaction between electrically neutral objects at sub-micron separations. Under the trend of miniaturization, such quantum electrodynamical effects are expected to play an important role in micro- and nano-mechanical devices. Nevertheless, utilization of Casimir forces on the chip level remains a major challenge because all experiments so far require an external object to be manually positioned close to the mechanical element. Here, by integrating a force-sensing micromechanical beam and an electrostatic actuator on a single chip, we demonstrate the Casimir effect between two micromachined silicon components on the same substrate. A high degree of parallelism between the two near-planar interacting surfaces can be achieved because they are defined in a single lithographic step. Apart from providing a compact platform for Casimir force measurements, this scheme also opens the possibility of tailoring the Casimir force using lithographically defined components of non-conventional shapes

Future changes in tropical cyclone activity in the North Indian Ocean projected by high-resolution MRI-AGCMs

Open Access at publisher's web site: http://www.springerlink.com/content/b682734237171631

Charge Induced Vortex Lattice Instability

It has been predicted that superconducting vortices should be electrically charged and that this effect is particularly enhanced for, high temperature superconductors.\cite{kho95,bla96} Hall effect\cite{hag91} and nuclear magnetic resonance (NMR) experiments\cite{kum01} suggest the existence of vortex charging, but the effects are small and the interpretation controversial. Here we show that the Abrikosov vortex lattice, characteristic of the mixed state of superconductors, will become unstable at sufficiently high magnetic field if there is charge trapped on the vortex core. Our NMR measurements of the magnetic fields generated by vortices in Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+y}$ single crystals\cite{che07} provide evidence for an electrostatically driven vortex lattice reconstruction with the magnitude of charge on each vortex pancake of $\mathbf{\sim 2}$x$\mathbf{10^{-3} e}$, depending on doping, in line with theoretical estimates.\cite{kho95,kna05}Comment: to appear in Nature Physics; 6 pages, 7 figure