Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

Stress and its effects on optical properties of GaN epilayers grown in Si(111), 6H-SiC(0001), and c-plane sapphire were investigated. Large tensile stress was present in GaN epilayers grown on Si and 6H-SiC, and a small compressive stress appeared in the film grown on sapphire. The results showed that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films.published_or_final_versio

Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be ∼0.2 and 200 cm-1, respectively, for the InGaN QDs. © 2006 American Institute of Physics.published_or_final_versio

Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of AuGaN Schottky contacts

Under identical preparation conditions, AuGaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers. © 2006 American Institute of Physics.published_or_final_versio

Molecular Mechanisms of Membrane Deformation by I-BAR Domain Proteins

Conclusions: These data define I-BAR domain as a functional member of the BAR domain superfamily and unravel the mechanisms by which I-BAR domains deform membranes to induce filopodia in cells. Furthermore, our work reveals unexpected divergence in the mechanisms by which evolutionarily distinct groups of I-BAR domains interact with PI(4,5)P(2)-rich membranes

Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts

Author name used in this publication: X. M. Tao2006-2007 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Violet electroluminescence of AlInGaN-InGaN multiquantum-well light-emitting diodes: Quantum-confined stark effect and heating effect

Electroluminescence (EL) from AlInGaN-InGaN multiquantum-well violet light-emitting diodes is investigated as a function of forward bias. Two distinct regimes have been identified: 1) quantum-confined Stark effect at low and moderately high forward biases; 2) heating effect at high biases. In the different regimes, the low-temperature EL spectra exhibit different spectral features which are discussed in detail. © 2007 IEEE.published_or_final_versio

The Paleoproterozoic Chibaisong Mafic-Ultramafic Intrusion and Cu-Ni Deposit, North China Craton: SHRIMP Zircon U-Pband Re-Os Geochronology and Geodynamic Implications

published_or_final_versio

A bank of unscented Kalman filters for multimodal human perception with mobile service robots

A new generation of mobile service robots could be ready soon to operate in human environments if they can robustly estimate position and identity of surrounding people. Researchers in this field face a number of challenging problems, among which sensor uncertainties and real-time constraints. In this paper, we propose a novel and efficient solution for simultaneous tracking and recognition of people within the observation range of a mobile robot. Multisensor techniques for legs and face detection are fused in a robust probabilistic framework to height, clothes and face recognition algorithms. The system is based on an efficient bank of Unscented Kalman Filters that keeps a multi-hypothesis estimate of the person being tracked, including the case where the latter is unknown to the robot. Several experiments with real mobile robots are presented to validate the proposed approach. They show that our solutions can improve the robot's perception and recognition of humans, providing a useful contribution for the future application of service robotics