362 research outputs found
A Corpus-Based, Pilot Study of Lexical Stress Variation in American English
Phonological free variation describes the phenomenon of there being more than one pronunciation for a word without any change in meaning (e.g. because, schedule, vehicle). The term also applies to words that exhibit different stress patterns (e.g. academic, resources, comparable) with no change in meaning or grammatical category. A corpus-based analysis of free variation is a useful tool for testing the validity of surveys of speakers' pronunciation preferences for certain variants. The current paper presents the results of a corpus-based pilot study of American English, in an attempt to replicate Mompéan's 2009 study of British English
Nonlinear evolution of surface morphology in InAs/AlAs superlattices via surface diffusion
Continuum simulations of self-organized lateral compositional modulation
growth in InAs/AlAs short-period superlattices on InP substrate are presented.
Results of the simulations correspond quantitatively to the results of
synchrotron x-ray diffraction experiments. The time evolution of the
compositional modulation during epitaxial growth can be explained only
including a nonlinear dependence of the elastic energy of the growing epitaxial
layer on its thickness. From the fit of the experimental data to the growth
simulations we have determined the parameters of this nonlinear dependence. It
was found that the modulation amplitude don't depend on the values of the
surface diffusion constants of particular elements.Comment: 4 pages, 3 figures, published in Phys. Rev. Lett.
http://link.aps.org/abstract/PRL/v96/e13610
Novel diffusion mechanism on the GaAs(001) surface: the role of adatom-dimer interaction
Employing first principles total energy calculations we have studied the
behavior of Ga and Al adatoms on the GaAs(001)-beta2 surface. The adsorption
site and two relevant diffusion channels are identified. The channels are
characterized by different adatom-surface dimer interaction. Both affect in a
novel way the adatom migration: in one channel the diffusing adatom jumps
across the surface dimers and leaves the dimer bonds intact, in the other one
the surface dimer bonds are broken. The two channels are taken into account to
derive effective adatom diffusion barriers. From the diffusion barriers we
conclude a strong diffusion anisotropy for both Al and Ga adatoms with the
direction of fastest diffusion parallel to the surface dimers. In agreement
with experimental observations we find higher diffusion barriers for Al than
for Ga.Comment: 4 pages, 2 figures, Phys. Rev. Lett. 79 (1997). Other related
publications can be found at http://www.rz-berlin.mpg.de/th/paper.htm
Re-entrant Layer-by-Layer Etching of GaAs(001)
We report the first observation of re-entrant layer-by-layer etching based on
{\it in situ\/} reflection high-energy electron-diffraction measurements. With
AsBr used to etch GaAs(001), sustained specular-beam intensity oscillations
are seen at high substrate temperatures, a decaying intensity with no
oscillations at intermediate temperatures, but oscillations reappearing at
still lower temperatures. Simulations of an atomistic model for the etching
kinetics reproduce the temperature ranges of these three regimes and support an
interpretation of the origin of this phenomenon as the site-selectivity of the
etching process combined with activation barriers to interlayer adatom
migration.Comment: 11 pages, REVTeX 3.0. Physical Review Letters, in press
- …