24,385 research outputs found
Quantum Melting of Charge Order due to Frustration in Two-Dimensional Quarter-Filled Systems
The effect of geometrical frustration in a two-dimensional 1/4-filled
strongly correlated electron system is studied theoretically, motivated by
layered organic molecular crystals. An extended Hubbard model on the square
lattice is considered, with competing nearest neighbor Coulomb interaction, V,
and that of next-nearest neighbor along one of the diagonals, V', which favor
different charge ordered states. Based on exact diagonalization calculations,
we find a metallic phase stabilized over a broad window at V' ~ V even for
large Coulomb repulsion strengths as a result of frustrating the charge ordered
states. Slightly modifying the lattice geometry relevant to the actual organic
compounds does not alter the results, suggesting that this `quantum melting' of
charge order is a robust feature of frustrated strongly correlated 1/4-filled
systems.Comment: 5 pages, 4 figures, to be published in Phys. Rev.
Strong coupling theory of the spinless charges on the triangular lattices: possibility of a new quantum liquid
We propose a new type of charge liquid state in the spinless fermion system
on a triangular lattice under strong inter-site Coulomb interactions, . In
the strong coupling limit (), the ground state is classical and disordered
due to geometrical frustration. The introduction of small t will drive the
system to a partially ordered phase which we call a "pinball liquid". A
possibly long range ordered Wigner crystal solid coexist with a liquid
component which are moving around them like a pinball. This liquid is dominant
over wide range of filling, even away from the regular triangle, and is also
realized in the hard core boson systems. Relevance to the organic theta-ET_2X
is discsussed.Comment: 4pages, 7figure
Non-monotonic temperature dependent transport in graphene grown by Chemical Vapor Deposition
Temperature-dependent resistivity of graphene grown by chemical vapor
deposition (CVD) is investigated. We observe in low mobility CVD graphene
device a strong insulating behavior at low temperatures and a metallic behavior
at high temperatures manifesting a non-monotonic in the temperature dependent
resistivity.This feature is strongly affected by carrier density modulation. To
understand this anomalous temperature dependence, we introduce thermal
activation of charge carriers in electron-hole puddles induced by randomly
distributed charged impurities. Observed temperature evolution of resistivity
is then understood from the competition among thermal activation of charge
carriers, temperature-dependent screening and phonon scattering effects. Our
results imply that the transport property of transferred CVD-grown graphene is
strongly influenced by the details of the environmentComment: 7 pages, 3 figure
Charge Ordering and Spin gap in NaV_2O_5
A possible ground state of NaV_2O_5 is proposed based on the Hartree
approximation for both on-site and intersite Coulomb interactions. The results
indicate that the intersite Coulomb interaction induces a zigzag type of charge
disproportionation (i.e. charge ordering) along the ladders of V-ions resulting
in the localized spins between neighboring ladders to form a spin gap. This new
state, which is different from the spin-Peierls state so far believed, seems to
be consistent with the existing experimental results.Comment: 3 pages, 4 figures, submitted to J. Phys. Soc. Jp
Formulating the Net Gain of MISO-SFN in the Presence of Self-Interferences
In this study, an analytical formula for multiple-input single-output single frequency network gain (MISO-SFNG) is investigated. To formulate the net MISO-SFNG, we derived the average signal to interference plus noise ratio (SINR) where the gain achieved by the distributed MISO diversity as a function of power imbalance is curve-fitted. Further, we analyzed the losses owing to self-interferences resulting from the delay spread and imperfect channel estimation. We verified the accuracy and effectiveness of the derived formula by comparing the measurement results with the analytical results. The derived formula helps to understand how various system factors affect the gain under a given condition. The formula can be used to evaluate the MISO-SFNG and to predict the MISO-SFN coverage in various system configurations
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