Detection and partial genetic characterisation of a novel variant of Avian nephritis virus in Indian poultry flocks showing diverse clinical signs

Avian nephritis virus (ANV) infects poultry flocks worldwide, but no confirmed cases have been reported from India so far. In the current study, disease investigation was carried out in 21 broiler flocks at different parts of India with clinical signs of nephritis, uneven and stunted growth, diarrhoea, reduced body weight, and mortality up to 9.72%. Out of the 21 flocks screened, two were found positive for ANV in RT-PCR assay. BLAST analysis revealed that the ANV of Indian origin was closely related to ANV-1 strains reported from Japan, Hungary and China. However, comparison of a small portion (~12% of nucleotides, i.e. ~60 nts, common site for ANV-1 and ANV-3, position 2200–2260 of ORF 1a gene) of the Indian ANV sequence with ANV-3 sequences revealed 89–93% identities with different ANV-3 isolates. Phylogenetically, ANV-1 forms three clades, and the Indian ANV clustered under clade II. This study confirms the existence of ANV in Indian poultry flocks and is the first report on the molecular detection and genetic characterisation of ANV from India

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology

Minimally invasive pediatric surgery: Our experience

Aim: Departmental survey of the pediatric laparoscopic and thoracoscopic procedures. Materials and Methods: It is a retrospective study from January 1999 to December 2007. The various types of surgeries, number of patients, complications and conversions of laparoscopic and thoracoscopic procedures were analyzed. Results: The number of minimally invasive procedures that had been performed over the past 9 years is 734, out of which thoracoscopic procedures alone were 48. The majority of the surgeries were appendicectomy (31%), orchiopexy (19%) and diagnostic laparoscopy (16%). The other advanced procedures include laparoscopic-assisted anorectoplasty, surgery for Hirschprung′s disease, thoracosocpic decortication, congenital diaphragmatic hernia repair, nephrectomy, fundoplication, etc. Our complications are postoperative fever, bleeding, bile leak following choledochal cyst excision and pneumothorax following bronchogenic cyst excision. A case of empyema thorax following thoracoscopic decortication succumbed due to disseminated tuberculosis. Our conversion rate was around 5% in the years 1999 to 2001, which has come down to 3% over the past few years. Conversions were for sliding hiatus hernia, nephrectomy, perforated adherent appendicitis, Meckel′s diverticulum, thoracoscopic decortication and ileal perforation. Conclusion: The minimally invasive pediatric surgical technique is increasingly accepted world wide and the need for laparoscopic training has become essential in every teaching hospital. It has a lot of advantages, such as less pain, early return to school and scarlessness. Our conversion rate has come down from 5% to 3% with experience and now we do more advanced procedures with a lower complication rate

A high-performance hydrogen sensor based on a reverse-biased MoS2/GaN heterojunction

We report a MoS2/GaN heterojunction-based gas sensor by depositing MoS2 over a GaN substrate via a highly controllable and scalable sputtering technique coupled with a post sulfurization process in a sulfur-rich environment. The microscopic and spectroscopic measurements expose the presence of highly crystalline and homogenous few atomic layer MoS2 on top of molecular beam epitaxially grown GaN film. Upon hydrogen exposure, the molecular adsorption tuned the barrier height at the MoS2/GaN interface under the reverse biased condition, thus resulting in high sensitivity. Our results reveal that temperature strongly affects the sensitivity of the device and it increases from 21% to 157% for 1% hydrogen with an increase in temperature (25-150 degrees C). For a deeper understanding of carrier dynamics at the heterointerface, we visualized the band alignment across the MoS2/GaN heterojunction having valence band and conduction band offset values of 1.75 and 0.28 eV. The sensing mechanism was demonstrated based on an energy band diagram at the MoS2/GaN interface in the presence and absence of hydrogen exposure. The proposed methodology can be readily applied to other combinations of heterostructures for sensing different gas analytes

A high-performance hydrogen sensor based on a reverse-biased MoS2/GaN heterojunction

We report a MoS2/GaN heterojunction-based gas sensor by depositing MoS2 over a GaN substrate via a highly controllable and scalable sputtering technique coupled with a post sulfurization process in a sulfur-rich environment. The microscopic and spectroscopic measurements expose the presence of highly crystalline and homogenous few atomic layer MoS2 on top of molecular beam epitaxially grown GaN film. Upon hydrogen exposure, the molecular adsorption tuned the barrier height at the MoS2/GaN interface under the reverse biased condition, thus resulting in high sensitivity. Our results reveal that temperature strongly affects the sensitivity of the device and it increases from 21% to 157% for 1% hydrogen with an increase in temperature (25-150 degrees C). For a deeper understanding of carrier dynamics at the heterointerface, we visualized the band alignment across the MoS2/GaN heterojunction having valence band and conduction band offset values of 1.75 and 0.28 eV. The sensing mechanism was demonstrated based on an energy band diagram at the MoS2/GaN interface in the presence and absence of hydrogen exposure. The proposed methodology can be readily applied to other combinations of heterostructures for sensing different gas analytes

Delineating the glycoproteome of elongating cotton fiber cells

The data presented here delineates the glycoproteome component in the elongating cotton fiber cells attained using complementary proteomic approaches followed by protein and N-linked glycosylation site identification (Kumar et al., 2013) [1]. Utilizing species specific protein sequence databases in proteomic approaches often leads to additional information that may not be obtained using cross-species databases. In this context we have reanalyzed our glycoproteome dataset with the Gossypium arboreum, Gossypium raimondii (version 2.0) and Gossypium hirsutum protein databases that has led to the identification of 21 N-linked glycosylation sites and 18 unique glycoproteins that were not reported in our previous study. The 1D PAGE and solution based glycoprotein identification data is publicly available at the ProteomeXchange Consortium via the PRIDE partner repository (Vizcaíno et al., 2013) [2] using the dataset identifier PXD000178 and the 2D PAGE based protein identification and glycopeptide approach based N-linked glycosylation site identification data is available at the ProteomeXchange Consortium via the PRIDE partner repository (Vizcaíno et al., 2013) [2] using the dataset identifier PXD002849

Divergent Responses of Hydrophilic CdSe and CdSe@CdS Core–Shell Nanocrystals in Apoptosis and In Vitro Cancer Cell Imaging: A Comparative Analysis

With their distinctive core–shell design, core–shell nanocrystals have drawn interest in catalysis, medicinal research, and nanotechnology. These nanocrystals have a variety of characteristics and possible uses. The application of core–shell nanocrystals offers significant potential in increasing diagnostic and therapeutic approaches for cancer research in apoptosis and in vitro cancer cell imaging. In the present study, we investigated the fluorescence behavior of hydrophilic CdSe (core-only) and CdSe@CdS (core–shell) nanocrystals (NCs) and their potential in cancer cell imaging. The addition of a CdS coating to CdSe NCs increased the fluorescence intensity tenfold. The successful fabrication of core–shell CdSe@CdS nanocrystals was proven by a larger particle size (evaluated via DLS and TEM) and their XRD pattern and surface morphology compared to CdSe (core-only) NCs. When these NCs were used for bioimaging in MCF-7 and HEK-293 cell lines, they demonstrated excellent cellular uptake due to higher fluorescence intensity within cancerous cells than normal cells. Comparative cytotoxicity studies revealed that CdSe NCs were more toxic to all three cell lines (HEK-293, MCF-7, and HeLa) than CdSe@CdS core–shell structures. Furthermore, a decrease in mitochondrial membrane potential and intracellular ROS production supported NCs inducing oxidative stress, which led to apoptosis via the mitochondria-mediated pathway. Increased cytochrome c levels, regulation of pro-apoptotic gene expression (e.g., p53, Bax), and down-regulation of Bcl-2 all suggested cellular apoptosis occurred via the intrinsic pathway. Significantly, at an equivalent dose of core–shell NCs, core-only NCs induced more oxidative stress, resulting in increased apoptosis. These findings shed light on the role of a CdS surface coating in reducing free radical release, decreasing cytotoxicity, and improving fluorescence, advancing the field of cell imaging