608 research outputs found

    Linear and nonlinear optical excitations in spatially-inhomogeneous semiconductor systems

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    Gegenstand der vorliegenden Arbeit ist die Licht-Materie-Wechselwirkung in raeumlich inhomogenen Halbleiterstrukturen. In den Kapiteln 2, 3 und 4 werden grundlegende Eigenschaften herausgearbeitet, die dadurch entstehen, dass die untersuchten Systeme von dreidimensionaler raeumlicher Homogenitaet abweichen. Darunter ist zu verstehen, dass sowohl das (anregende) Lichtfeld inhomogen verteilt (Kap 2 und 3) als auch die intrinsischen Materialeigenschaften des Halbleiters raeumlich strukturiert sein koennen (Kap. 2 und 4). In Kapitel 2 wird eine Theorie entwickelt, die es ermoeglicht, Halbleiterstrukturen zu beschreiben, die sich in der Naehe eines photonischen Kristalls befinden. Lineare und nichtlineare optische Eigenschaften von verschiedenen Silizium-Halbleiteroberflaechen werden in Kapitel 4 behandelt

    Optically induced coherent intra-band dynamics in disordered semiconductors

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    On the basis of a tight-binding model for a strongly disordered semiconductor with correlated conduction- and valence band disorder a new coherent dynamical intra-band effect is analyzed. For systems that are excited by two, specially designed ultrashort light-pulse sequences delayed by tau relatively to each other echo-like phenomena are predicted to occur. In addition to the inter-band photon echo which shows up at exactly t=2*tau relative to the first pulse, the system responds with two spontaneous intra-band current pulses preceding and following the appearance of the photon echo. The temporal splitting depends on the electron-hole mass ratio. Calculating the population relaxation rate due to Coulomb scattering, it is concluded that the predicted new dynamical effect should be experimentally observable in an interacting and strongly disordered system, such as the Quantum-Coulomb-Glass.Comment: to be published in Physical Review B15 February 200

    Microscopic modeling of photoluminescence of strongly disordered semiconductors

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    A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diagonal disorder and the many-body Coulomb interaction. As a case study, the light emission of a correlated plasma is investigated numerically for a one-dimensional two-band tight-binding model. The band structure of the underlying ordered system is assumed to correspond to either a direct or an indirect semiconductor. In particular, luminescence and absorption spectra are computed for various levels of disorder and sample temperature to determine thermodynamic relations, the Stokes shift, and the radiative lifetime distribution.Comment: 35 pages, 14 figure

    Dynamics of short time--scale energy relaxation of optical excitations due to electron--electron scattering in the presence of arbitrary disorder

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    A non--equilibrium occupation distribution relaxes towards the Fermi--Dirac distribution due to electron--electron scattering even in finite Fermi systems. The dynamic evolution of this thermalization process assumed to result from an optical excitation is investigated numerically by solving a Boltzmann equation for the carrier populations using a one--dimensional disordered system. We focus on the short time--scale behavior. The logarithmically long time--scale associated with the glassy behavior of interacting electrons in disordered systems is not treated in our investigation. For weak disorder and short range interaction we recover the expected result that disorder enhances the relaxation rate as compared to the case without disorder. For sufficiently strong disorder, however, we find an opposite trend due to the reduction of scattering probabilities originating from the strong localization of the single--particle states. Long--range interaction in this regime produces a similar effect. The relaxation rate is found to scale with the interaction strength, however, the interplay between the implicit and the explicit character of the interaction produces an anomalous exponent.Comment: 4 pages, 3 EPS figure

    The Library of Babel: On the origin of gravitational thermodynamics

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    We show that heavy pure states of gravity can appear to be mixed states to almost all probes. For AdS_5 Schwarzschild black holes, our arguments are made using the field theory dual to string theory in such spacetimes. Our results follow from applying information theoretic notions to field theory operators capable of describing very heavy states in gravity. For half-BPS states of the theory which are incipient black holes, our account is exact: typical microstates are described in gravity by a spacetime ``foam'', the precise details of which are almost invisible to almost all probes. We show that universal low-energy effective description of a foam of given global charges is via certain singular spacetime geometries. When one of the specified charges is the number of D-branes, the effective singular geometry is the half-BPS ``superstar''. We propose this as the general mechanism by which the effective thermodynamic character of gravity emerges.Comment: LaTeX, 6 eps figures, uses young.sty and wick.sty; Version 2: typos corrected, minor rewordings and clarifications, references adde

    Backward pion-nucleon scattering

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    A global analysis of the world data on differential cross sections and polarization asymmetries of backward pion-nucleon scattering for invariant collision energies above 3 GeV is performed in a Regge model. Including the NαN_\alpha, NγN_\gamma, Δδ\Delta_\delta and Δβ\Delta_\beta trajectories, we reproduce both angular distributions and polarization data for small values of the Mandelstam variable uu, in contrast to previous analyses. The model amplitude is used to obtain evidence for baryon resonances with mass below 3 GeV. Our analysis suggests a G39G_{39} resonance with a mass of 2.83 GeV as member of the Δβ\Delta_{\beta} trajectory from the corresponding Chew-Frautschi plot.Comment: 12 pages, 16 figure

    Exceptionally Slow Rise in Differential Reflectivity Spectra of Excitons in GaN: Effect of Excitation-induced Dephasing

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    Femtosecond pump-probe (PP) differential reflectivity spectroscopy (DRS) and four-wave mixing (FWM) experiments were performed simultaneously to study the initial temporal dynamics of the exciton line-shapes in GaN epilayers. Beats between the A-B excitons were found \textit{only for positive time delay} in both PP and FWM experiments. The rise time at negative time delay for the differential reflection spectra was much slower than the FWM signal or PP differential transmission spectroscopy (DTS) at the exciton resonance. A numerical solution of a six band semiconductor Bloch equation model including nonlinearities at the Hartree-Fock level shows that this slow rise in the DRS results from excitation induced dephasing (EID), that is, the strong density dependence of the dephasing time which changes with the laser excitation energy.Comment: 8 figure
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