Ion-beam-induced reconstruction of amorphous GaN

Wurtzite GaN can be rendered amorphous by high-dose heavy-ion bombardment. We show here that relatively low-dose reirradiation of such amorphous GaN (a-GaN) with MeV light ions can significantly change some of the physical properties of a-GaN. In particular, light-ion reirradiation of a-GaN results in (i) an increase in material density, (ii) the suppression of complete decomposition during postimplantation annealing, (iii) a significant increase in the values of hardness and Young's modulus, and (iv) an apparent decrease in the absorption of visible light. Transmission electronmicroscopy shows that a-GaN remains completely amorphous after light-ion reirradiation. Therefore, we attribute the above effects of light-ion reirradiation to an ion-beam-induced atomic-level reconstruction of the amorphous phase. Results indicate that electronic energy loss of light ions is responsible for the changes in the mechanical properties and for the suppression of thermally induced decomposition of a-GaN. However, the changes in the density of a-GaN appear to be controlled by the nuclear energy loss of light ions

Mechanical Deformation Induced in Si and GaN Under Berkovich Nanoindentation

Details of Berkovich nanoindentation-induced mechanical deformation mechanisms of single-crystal Si(100) and the metal-organic chemical-vapor deposition (MOCVD) derived GaN thin films have been systematic investigated by means of micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM) techniques. The XTEM samples were prepared by using focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The behaviors of the discontinuities displayed in the loading and unloading segments of the load-displacement curves of Si and GaN thin films performed with a Berkovich diamond indenter tip were explained by the observed microstructure features obtained from XTEM analyses. According to the observations of micro-Raman and XTEM, the nanoindentation-induced mechanical deformation is due primarily to the generation and propagation of dislocations gliding along the pyramidal and basal planes specific to the hexagonal structure of GaN thin films rather than by indentation-induced phase transformations displayed in Si

Surface-enhanced Raman scattering on nanoporous gold

Kucheyev SO, Hayes JR, Biener J, Huser T. Surface-enhanced Raman scattering on nanoporous gold. Appl. Phys. Lett. 2006;89(5): 53102

The amorphization of 3C-SiC irradiated at moderately elevated temperatures as revealed by X-ray diffraction

International audienceMechanisms of radiation damage buildup in 3C-SiC remain poorly understood. Here, we use X-ray diffraction in combination with numerical simulations to study depth profiles of radiation-produced strain and lattice damage in 3C-SiC bombarded in the temperature range of 25-200 °C with 500 keV Ar ions. Results reveal increased defect recombination with increasing temperature, with a critical amorphization fluence increasing from 0.17 to 0.44 displacements per atom. The amorphization process is found to be correlated with the evolution of lattice strain. We find that, at fluences corresponding to the onset of amorphization, lattice strain is ~2% and is independent of temperature. With continuing bombardment above the onset of amorphization, the strain in the crystal bulk increases and reaches a saturation value that decreases from 7% to 5% with increasing temperature. Based on strain profiles, we compute depth profiles of the effective concentration of point defect clusters in the crystalline phase. Bombardment at higher temperatures results in lower maximum defect concentrations pointing to enhanced defect mobility.

Visible and 1.54 μ\mum Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering

In this paper, we present our main results on the structural and optical properties of light-emitting amorphous silicon nitride (SiN(x)) films fabricated by reactive magnetron cosputtering. In particular, we discuss the origin of the visible emission in amorphous silicon nitride films and investigate the optical emission properties of Erbium-doped amorphous silicon nitride (Er:SiN(x)). The mechanisms of Er excitation and de-excitation in Er:SiN(x) are discussed in relation to the engineering of efficient light sources at 1.54 mu m for on-chip nanophotonics applications. These results suggest that Er-doped amorphous silicon nitride films have a large potential for the fabrication of optically active photonic devices based on the Si technology