Silicon Betavoltaic Batteries Structures

For low-power miniature energy creation sources the particular interest is nickel Ni63. This paper discusses the main types of betavoltaic battery structures with the prospects for industrial application using - isotope of nickel Ni63. It is shown that the prospects for improving the effective efficiency are planar multijunction betavoltaic batteries

Heterostructure Active Area Optimization by Simulation

Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a LED having p-n junction area S0 can be considered as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel, each SLED has its own In-content and its own p-n junction area S(X). Good correlation in simulation and experimental results has been obtained. It was determined that the best structure for AlGaInN NH is p+GaN / p+Al0.2Ga0.8N / 4(n-InxGa1 – xN-n- GaN) / n+GaN. The main thing is that in the NH AA there are 4QW-in two central ones there is maximum radiation and two ones at the both ends of active region are “barriers” which help to concentrate electrons / holes in active region and additionally “protect” QW from different defects

Heterostructure Active Area Optimization by Simulation

Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a LED having p-n junction area S0 can be considered as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel, each SLED has its own In-content and its own p-n junction area S(X). Good correlation in simulation and experimental results has been obtained. It was determined that the best structure for AlGaInN NH is p+GaN / p+Al0.2Ga0.8N / 4(n-InxGa1 – xN-n- GaN) / n+GaN. The main thing is that in the NH AA there are 4QW-in two central ones there is maximum radiation and two ones at the both ends of active region are “barriers” which help to concentrate electrons / holes in active region and additionally “protect” QW from different defects

Simulation the Beta Power Sources Characteristics

In this paper the simulation of silicon beta-stimulated power sources spectral sensitivity characteristics was carried out. It was analyzed the influence of the semiconductor material characteristics (the doping level, lifetime) and power supply design on the photosensitive structures characteristics in order to optimize them

AlGaN Heterostructure Optimization for Photodetectors

GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV-visible wavelength range. Most of experimental and theoretical work in this area has been focused so far on Schottky diode and p-i-n structures for solar blind applications. However, it seems that bipolar phototransistors with their additional functionality could also be of potential interest. In this work we present the results of phototransistors parameters simulation using the software – Sim Windows. The structure analyzed consisted, counting from the substrate, of n-Al[x]Ga1 – [x]N collector, p-GaN base and n-Al[x]Ga1 – [x]N emitter. The Al mole fraction in the collector and emitter was varied from x = 0.2 to x = 0.3. The collector and emitter thickness was taken as 0.9 hm. The doping level in the emitter and collector was varied from 1017 to 1019 cm – 3. The p-GaN base thickness was taken as 0.3 m, with doping of 1017-1018 cm – 3. The electron and hole lifetimes in the base were taken as 12 ns

Экспрессия промежуточных филаментов и регуляторов клеточного цикла в уротелиальных опухолях мочевого пузыря

Intermediate filament (CK20) and cell cycle regulators (P53, Ki-67) were evaluated by immunohistochemical technique in 32 samples of bladder tumors (Ta - 8, T1-2G1-2 - 20, T1G3 - 3 and T2G3 - 1). Research has shown that intensity of P53 staining allow to defined the grade of tumor cells. Pathological type of CK20 distribution in cells and its high proliferative index (Ki-67) permit to reveal invasive urothelial tumors.Фрагменты опухолей мочевого пузыря были исследованы у 32 больных в стадии Та (8 пациентов), Т1-2 G1-2 (20), T1G3 (3), T2G3(1). Иммуногистохимическим методом изучали экспрессию интерфиламентов СК20 и белков-регуляторов клеточного цикла - Р53, Ki-67. Установлено, что интенсивность окрашивания ядер с помощью антител к белку Р53 позволяет оценить степень злокачественности опухолевых клеток, а патологический тип экспрессии CK 20 и высокий процент позитивно окрашенных ядер на белок Ki-67 характеризует инвазивные уротелиальные опухоли

The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply

In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It has been observed that the concentration of the lightly doped region more significantly influence on the current-voltage characteristics than the depth of the p-n-junction. The concentration of the n-region, equal to 1014 cm – 3, can be considered as during betavoltaic power supply design. It is shown that, by increasing the power supply activity the conversion efficiency of the structure increases, too

Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity

In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the photosensitive structures characteristics in order to optimize them were investigated

The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance

In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of their investigation are presented. The results of the program usage based on an example of calculating the influence of the high-resistance "well" thickness in the silicon p-i-n-diode spectral response are discussed. For the accuracy of the program estimation it was compared the theoretical spectral characteristics of a silicon PIN-diode 5 kOhm substrate with the experimental data

Simulation the Beta Power Sources Characteristics

In this paper the simulation of silicon beta-stimulated power sources spectral sensitivity characteristics was carried out. It was analyzed the influence of the semiconductor material characteristics (the doping level, lifetime) and power supply design on the photosensitive structures characteristics in order to optimize them