Spin polarization of strongly interacting 2D electrons: the role of disorder

In high-mobility silicon MOSFET's, the $g^*m^*$ inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that $g^*\mu_BH_s=2E_F$ are in surprisingly good agreement with $g^*m^*$ obtained by direct measurement of Shubnikov-de Haas oscillations. The enhanced susceptibility $\chi^* \propto (g^*m^*)$ exhibits critical behavior of the form $\chi^* \propto (n - n_0)^{-\alpha}$. We examine the significance of the field scale $H_s$ derived from transport measurements, and show that this field signals the onset of full spin polarization only in the absence of disorder. Our results suggest that disorder becomes increasingly important as the electron density is reduced toward the transition.Comment: 4 pages, 3 figure

Can mesoscopic fluctuations reverse the supercurrent through a disordered Josephson junction?

We calculate the Josephson coupling energy $U_J(\phi)$ (related to the supercurrent $I=(2e/\hbar) dU_J/d\phi$) for a disordered normal metal between two superconductors with a phase difference $\phi$. We demonstrate that the symmetry of the scattering matrix of non-interacting quasiparticles in zero magnetic field implies that $U_J(\phi)$ has a minimum at $\phi=0$. A maximum (that would lead to a $\pi$-junction or negative superfluid density) is excluded for any realization of the disorder.Comment: 2 page

Exact analytical expression for magnetoresistance using quantum groups

We obtain an exact analytical expression for magnetoresistance using noncommutative geometry and quantum groups.Then we will show that there is a deep relationship between magnetoresistance and the quantum group $su_{q}(2)$, from which we understand the quantum interpretation of the quantum corrections to the conductivity.Comment: 8 pages, 3 figures, replaced with the version published in Physics Letters

Effect of Nyquist Noise on the Nyquist Dephasing Rate in 2d Electron Systems

We measure the effect of externally applied broadband Nyquist noise on the intrinsic Nyquist dephasing rate of electrons in a two-dimensional electron gas at low temperatures. Within the measurement error, the phase coherence time is unaffected by the externally applied Nyquist noise, including applied noise temperatures of up to 300 K. The amplitude of the applied Nyquist noise from 100 MHz to 10 GHz is quantitatively determined in the same experiment using a microwave network analyzer.Comment: 5 pages, 4 figures. Author affiliation clarified; acknowledgements modified. Replacement reason clarifie

Interaction Corrections to Two-Dimensional Hole Transport in Large rsr_{s} Limit

The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter $F_{0}^{\sigma}$ determined from the experiment, however, decreases with increasing $r_{s}$ for r_{s}\agt22, a behavior unexpected from existing theoretical calculations valid for small $r_{s}$.Comment: 6 pages, 4 figure

Fate of the extended states in a vanishing magnetic field: the role of spins in strongly-interacting 2D electron systems

In non-interacting or weakly-interacting 2D electron systems, the energy of the extended states increases as the perpendicular magnetic field approaches zero: the extended states "float up" in energy, giving rise to an insulator. However, in those 2D systems where metallic conductivity has been recently observed in zero magnetic field, the energy of the extended states remains constant or even decreases as B -> 0, thus allowing conduction in the limit of zero temperature. Here we show that aligning the electrons' spins causes the extended states to once more "float up" in energy in the vanishing perpendicular magnetic field, as they do for non- or weakly-interacting electrons. The difference between extended states that float up (an insulator) or remain finite (a metal) is thus tied to the existence of the spins

Hall Coefficient in an Interacting Electron Gas

The Hall conductivity in a weak homogeneous magnetic field, $\omega_{c}\tau \ll 1$, is calculated. We have shown that to leading order in $1/\epsilon_{F}\tau$ the Hall coefficient $R_{H}$ is not renormalized by the electron-electron interaction. Our result explains the experimentally observed stability of the Hall coefficient in a dilute electron gas not too close to the metal-insulator transition. We avoid the currently used procedure that introduces an artificial spatial modulation of the magnetic field. The problem of the Hall effect is reformulated in a way such that the magnetic flux associated with the scattering process becomes the central element of the calculation.Comment: 23 pages, 15 figure

Two-Component Scaling near the Metal-Insulator Bifurcation in Two-Dimensions

We consider a two-component scaling picture for the resistivity of two-dimensional (2D) weakly disordered interacting electron systems at low temperature with the aim of describing both the vicinity of the bifurcation and the low resistance metallic regime in the same framework. We contrast the essential features of one-component and two-component scaling theories. We discuss why the conventional lowest order renormalization group equations do not show a bifurcation in 2D, and a semi-empirical extension is proposed which does lead to bifurcation. Parameters, including the product $z\nu$, are determined by least squares fitting to experimental data. An excellent description is obtained for the temperature and density dependence of the resistance of silicon close to the separatrix. Implications of this two-component scaling picture for a quantum critical point are discussed.Comment: 7 pages, 1 figur

Experimental study of weak antilocalization effect in a high mobility InGaAs/InP quantum well

The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular attention is paid to the experimental extraction of phase-breaking and spin-orbit scattering times when weak anti- localization effects are prominent. Compared with metals and low mobility semiconductors the characteristic magnetic field $B_{tr} = \hbar/4eD \tau$ in high mobility samples is very small and the experimental dependencies of the interference effects extend to fields several hundreds of times larger. Fitting experimental results under these conditions therefore requires theories valid for arbitrary magnetic field. It was found, however, that such a theory was unable to fit the experimental data without introducing an extra, empirical, scale factor of about 2. Measurements in tilted magnetic fields and as a function of temperature established that both the weak localization and the weak anti-localization effects have the same, orbital origin. Fits to the data confirmed that the width of the low field feature, whether a weak localization or a weak anti-localization peak, is determined by the phase-breaking time and also established that the universal (negative) magnetoresistance observed in the high field limit is associated with a temperature independent spin-orbit scattering time.Comment: 13 pages including 10 figure

Metallicity and its low temperature behavior in dilute 2D carrier systems

We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in the semiconductor. We derive a leading behavior in the transport property, which is exact in the strict 2D approximation and provides a zeroth order explanation for the strength of metallicity in various 2D carrier systems. By carefully comparing the calculated full nonlinear temperature dependence of electronic resistivity at low temperatures with the corresponding asymptotic analytic form obtained in the $T/T_F \to 0$ limit, both within the RPA screened charged impurity scattering theory, we critically discuss the applicability of the linear temperature dependent correction to the low temperature resistivity in 2D semiconductor structures. We find quite generally that for charged ionized impurity scattering screened by the electronic dielectric function (within RPA or its suitable generalizations including local field corrections), the resistivity obeys the asymptotic linear form only in the extreme low temperature limit of $T/T_F \le 0.05$. We point out the experimental implications of our findings and discuss in the context of the screening theory the relative strengths of metallicity in different 2D systems.Comment: We have substantially revised this paper by adding new materials and figures including a detailed comparison to a recent experimen