We consider a two-component scaling picture for the resistivity of
two-dimensional (2D) weakly disordered interacting electron systems at low
temperature with the aim of describing both the vicinity of the bifurcation and
the low resistance metallic regime in the same framework. We contrast the
essential features of one-component and two-component scaling theories. We
discuss why the conventional lowest order renormalization group equations do
not show a bifurcation in 2D, and a semi-empirical extension is proposed which
does lead to bifurcation. Parameters, including the product zν, are
determined by least squares fitting to experimental data. An excellent
description is obtained for the temperature and density dependence of the
resistance of silicon close to the separatrix. Implications of this
two-component scaling picture for a quantum critical point are discussed.Comment: 7 pages, 1 figur