Si/SiC bonded wafer: a route to carbon free SiO2 on SiC

This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to fabricating SiC metal-oxide-semiconductor (MOS) devices with lower interface state densities (Dit). Physical characterization demonstrate that the transferred Si layer is relatively smooth, uniform, and essentially monocrystalline. The Si on SiC has been totally or partially thermally oxidized at 900–1150 °C. Dit for both partially and completely oxidized silicon layers on SiC were significantly lower than Dit values for MOS capacitors fabricated via conventional thermal oxidation of SiC. The quality of the SiO2, formed by oxidation of a wafer-bonded silicon layer reported here has the potential to realize a number of innovative heterojunction concepts and devices, including the fabrication of high quality and reliable SiO2 gate oxides

4H–SiC photoconductive switching devices for use in high-power applications

Siliconcarbide is a wide-band-gapsemiconductor suitable for high-power high-voltage devices and it has excellent properties for use in photoconductive semiconductor switches (PCSSs). PCSS were fabricated as planar structures on high-resistivity 4H–SiC and tested at dc bias voltages up to 1000 V. The typical maximum photocurrent of the device at 1000 V was about 49.4 A. The average on-state resistance and the ratio of on-state to off-state currents were about 20 Ω and 3×1011, respectively. Photoconductivity pulse widths for all applied voltages were 8–10 ns. These excellent results are due in part to the removal of the surface damage by high-temperature H2 etching and surface preparation. Atomic force microscopy images revealed that very good surface morphology, atomic layer flatness, and large step width were achieved

Carbon-based materials for ECL detection

The present work reports on the use of different carbon-based electrodes for ElectroChemiLuminescence (ECL) detection. Carbon NanoTubes (CNT), Glassy Carbon (GC) and Silicon Carbide (SiC) were studied and their ECL performance measured. CNT electrodes allow for the detection of lower Ruthenium concentrations compared with the GC ones, but they present a minor reproducibility. Preliminary analysis of SiC electrodes shows that it is a promising material to be used in ECL, especially for biological application due to its biocompatibilit

Point Defect Characterization of 3C-SiC Layers Grown on Si (001) by Hot Wall CVD

http://www.ecscrm2006.org/ Schottky diodes have been fabricated and point defect characterization conducted on single crystalline 3C-SiC films in order to correlate its electrical properties with device performance. DLTS characterization, performed over a temperature and bias range of 50-150K and 0.05-5V, respectively, showed the presence of two traps. The position of one of the traps moved from approximately 175 K to 240 K when the bias was increased from 0.05V to 5V; while the position for the other trap remained unchanged. We believe this phenomenon may be attributed to a surface effect, a Poole-Frenkel effect or, alternatively, to an in-depth dependence of the trap emission properties on electric field. The 3C-SiC on Si films were planarized to improve the performance of gold Schottky contacts resulting in diodes with an ideality factor of 2. Electron beam induced current (EBIC) in a scanning electron microscope (SEM) system was used to structurally analyze the films. Finally, point defect characterization was performed via capacitance-voltage (C-V) measurements, deep level transient spectroscopy (DLTS) and spectral photocurrent (PC)