Fabrication and investigation of indium nitride possessing ferromagnetic properties

An overview of the scientific literature since 2000 on InN doping with impurities giving it ferromagnetic properties and on the magnetic properties of InN is presented. According to theoretical and experimental studies, InN doped with transition metals and rare earth elements possesses ferromagnetic properties at temperatures above room temperature and is a material promising for spintronics

Fabrication and investigation of indium nitride possessing ferromagnetic properties

An overview of the scientific literature since 2000 on InN doping with impurities giving it ferromagnetic properties and on the magnetic properties of InN is presented. According to theoretical and experimental studies, InN doped with transition metals and rare earth elements possesses ferromagnetic properties at temperatures above room temperature and is a material promising for spintronics

Formation of dislocations in the process of impurity diffusion in GaAs

A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion layers doped with various impurities (elements of II, IV, and VI groups and transition elements) is studied, depending on the conditions of diffusion. It is shown that during the diffusion of impurities in GaAs, in the diffusion layers, dislocations are formed, the density of which in the layers doped to the limiting surface concentrations can reach 108 cm–2. As the surface concentration of the diffusing impurity decreases, the dislocation density decreases. The diffusion conditions are determined, under which no additional dislocations are formed. Based on a comparison of the obtained experimental data and the results of the performed calculation, it was concluded that the formation of dislocations during the diffusion of impurities in GaAs is due to the gradient of the impurity concentration

Manufacturing and properties of ferromagnetic aluminum nitride doped with nonmagnetic impurities

The review of literature on AlN doping with nonmagnetic impurities (elements of groups I, II, III, and IV of both subgroups and rare earth elements), providing ferromagnetic properties, is presented. The magnetic and electrical properties of AlN are considered in detail. It follows from theoretical and experimental investigations that AlN doped with nonmagnetic impurities has ferromagnetic properties at temperatures above room temperature and is a promising material for spintronics