46,626 research outputs found

    Constrained Jackiw-Rebbi model gives McGreevy-Swingle model

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    We show that the recently considered McGreevy-Swingle model for Majorana fermions in the presence of a 't Hooft-Polyakov magnetic monopole arises when the Jackiw-Rebbi model is constrained to be conjugation self dual.Comment: 3 page

    Alternative conformal quantum mechanics

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    We investigate a one dimensional quantum mechanical model, which is invariant under translations and dilations but does not respect the conventional conformal invariance. We describe the possibility of modifying the conventional conformal transformation such that a scale invariant theory is also invariant under this new conformal transformation

    Iterated smoothed bootstrap confidence intervals for population quantiles

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    This paper investigates the effects of smoothed bootstrap iterations on coverage probabilities of smoothed bootstrap and bootstrap-t confidence intervals for population quantiles, and establishes the optimal kernel bandwidths at various stages of the smoothing procedures. The conventional smoothed bootstrap and bootstrap-t methods have been known to yield one-sided coverage errors of orders O(n^{-1/2}) and o(n^{-2/3}), respectively, for intervals based on the sample quantile of a random sample of size n. We sharpen the latter result to O(n^{-5/6}) with proper choices of bandwidths at the bootstrapping and Studentization steps. We show further that calibration of the nominal coverage level by means of the iterated bootstrap succeeds in reducing the coverage error of the smoothed bootstrap percentile interval to the order O(n^{-2/3}) and that of the smoothed bootstrap-t interval to O(n^{-58/57}), provided that bandwidths are selected of appropriate orders. Simulation results confirm our asymptotic findings, suggesting that the iterated smoothed bootstrap-t method yields the most accurate coverage. On the other hand, the iterated smoothed bootstrap percentile method interval has the advantage of being shorter and more stable than the bootstrap-t intervals.Comment: Published at http://dx.doi.org/10.1214/009053604000000878 in the Annals of Statistics (http://www.imstat.org/aos/) by the Institute of Mathematical Statistics (http://www.imstat.org

    The inferior caval vein draining into the left atrial cavity : a rare case

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    The inferior vena cava (IVC) draining into the left atrium (LA) is exceedingly rare in the setting of the usual atrial arrangement (situs solitus). This article describes a patient with this unique anomaly, and its repair.peer-reviewe

    Chemisorption on a model bcc metal

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    The system considered here is that of a single atom with one energy level chemisorbed on the (001) surface of a model bcc metal. We present the change in the density of electronic states Δn (E) due to chemisorption for two cases: one when the adatom is bound to a single substrate atom in the "on‐site" configuration and the other when it is bound to four substrate atoms in the "centered fourfold site." In principle, this change in the density of states Δn can be related to the results of photoemission measurements

    Stress-Induced Delamination Of Through Silicon Via Structures

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    Continuous scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently three-dimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution to meet the future interconnect requirement. Thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper examines the effect of thermal stresses on interfacial reliability of TSV structures. First, the three-dimensional distribution of the thermal stress near the TSV and the wafer surface is analyzed. Using a linear superposition method, a semi-analytic solution is developed for a simplified structure consisting of a single TSV embedded in a silicon (Si) wafer. The solution is verified for relatively thick wafers by comparing to numerical results obtained by finite element analysis (FEA). Results from the stress analysis suggest interfacial delamination as a potential failure mechanism for the TSV structure. Analytical solutions for various TSV designs are then obtained for the steady-state energy release rate as an upper bound for the interfacial fracture driving force, while the effect of crack length is evaluated numerically by FEA. Based on these results, the effects of TSV designs and via material properties on the interfacial reliability are elucidated. Finally, potential failure mechanisms for TSV pop-up due to interfacial fracture are discussed.Aerospace Engineerin
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