600 research outputs found
Critical point for the CAF-F phase transition at charge neutrality in bilayer graphene
We report on magneto-transport measurements up to 30 T performed on a bilayer
graphene Hall bar, enclosed by two thin hexagonal boron nitride flakes. Our
high mobility sample exhibits an insulating state at neutrality point which
evolves into a metallic phase when a strong in-plane field is applied, as
expected for a transition from a canted antiferromagnetic to a ferromagnetic
spin ordered phase. For the first time we individuate a temperature-independent
crossing in the four-terminal resistance as a function of the total magnetic
field, corresponding to the critical point of the transition. We show that the
critical field scales linearly with the perpendicular component of the field,
as expected from the underlying competition between the Zeeman energy and
interaction-induced anisotropies. A clear scaling of the resistance is also
found and an universal behavior is proposed in the vicinity of the transition
Field-induced insulating states in a graphene superlattice
We report on high-field magnetotransport (B up to 35 T) on a gated
superlattice based on single-layer graphene aligned on top of hexagonal boron
nitride. The large-period moir\'e modulation (15 nm) enables us to access the
Hofstadter spectrum in the vicinity of and above one flux quantum per
superlattice unit cell (Phi/Phi_0 = 1 at B = 22 T). We thereby reveal, in
addition to the spin-valley antiferromagnet at nu = 0, two insulating states
developing in positive and negative effective magnetic fields from the main nu
= 1 and nu = -2 quantum Hall states respectively. We investigate the field
dependence of the energy gaps associated with these insulating states, which we
quantify from the temperature-activated peak resistance. Referring to a simple
model of local Landau quantization of third generation Dirac fermions arising
at Phi/Phi_0 = 1, we describe the different microscopic origins of the
insulating states and experimentally determine the energy-momentum dispersion
of the emergent gapped Dirac quasi-particles
Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in BiSe with high charge-carrier density
Topological insulators are ideally represented as having an insulating bulk
with topologically protected, spin-textured surface states. However, it is
increasingly becoming clear that these surface transport channels can be
accompanied by a finite conducting bulk, as well as additional topologically
trivial surface states. To investigate these parallel conduction transport
channels, we studied Shubnikov-de Haas oscillations in BiSe thin films,
in high magnetic fields up to 30 T so as to access channels with a lower
mobility. We identify a clear Zeeman-split bulk contribution to the
oscillations from a comparison between the charge-carrier densities extracted
from the magnetoresistance and the oscillations. Furthermore, our analyses
indicate the presence of a two-dimensional state and signatures of additional
states the origin of which cannot be conclusively determined. Our findings
underpin the necessity of theoretical studies on the origin of and the
interplay between these parallel conduction channels for a careful analysis of
the material's performance.Comment: Manuscript including supplemental materia
Biblioteca pública de Chapecó
TCC (graduação) - Universidade Federal de Santa Catarina. Centro Tecnológico. Arquiteturaeste tcc não contém resumo
Anisotropic and strong negative magneto-resistance in the three-dimensional topological insulator Bi2Se3
We report on high-field angle-dependent magneto-transport measurements on
epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At
low temperature, we observe quantum oscillations that demonstrate the
simultaneous presence of bulk and surface carriers. The magneto- resistance of
Bi2Se3 is found to be highly anisotropic. In the presence of a parallel
electric and magnetic field, we observe a strong negative longitudinal
magneto-resistance that has been consid- ered as a smoking-gun for the presence
of chiral fermions in a certain class of semi-metals due to the so-called axial
anomaly. Its observation in a three-dimensional topological insulator implies
that the axial anomaly may be in fact a far more generic phenomenon than
originally thought.Comment: 6 pages, 4 figure
Deterministic direct growth of WS2 on CVD graphene arrays
The combination of the exciting properties of graphene with those of monolayer tungsten disulfide (WS2) makes this heterostack of great interest for electronic, optoelectronic and spintronic applications. The scalable synthesis of graphene/WS2 heterostructures on technologically attractive substrates like SiO2 would greatly facilitate the implementation of novel two-dimensional (2D) devices. In this work, we report the direct growth of monolayer WS2 via chemical vapor deposition (CVD) on single-crystal graphene arrays on SiO2. Remarkably, spectroscopic and microscopic characterization reveals that WS2 grows only on top of the graphene crystals so that the vertical heterostack is selectively obtained in a bottom-up fashion. Spectroscopic characterization indicates that, after WS2 synthesis, graphene undergoes compressive strain and hole doping. Tailored experiments show that such hole doping is caused by the modification of the SiO2 stoichiometry at the graphene/SiO2 interface during the WS2 growth. Electrical transport measurements reveal that the heterostructure behaves like an electron-blocking layer at large positive gate voltage, which makes it a suitable candidate for the development of unipolar optoelectronic components
Syndromes associated with mitochondrial DNA depletion
This is an Open Access article distributed under the terms of the Creative
Commons Attribution License.Mitochondrial dysfunction accounts for a large group of inherited metabolic disorders most of which are due to a dysfunctional mitochondrial respiratory chain (MRC) and, consequently, deficient energy production. MRC function depends on the coordinated expression of both nuclear (nDNA) and mitochondrial (mtDNA) genomes. Thus, mitochondrial diseases can be caused by genetic defects in either the mitochondrial or the nuclear genome, or in the cross-talk between the two. This impaired cross-talk gives rise to so-called nuclear-mitochondrial intergenomic communication disorders, which result in loss or instability of the mitochondrial genome and, in turn, impaired maintenance of qualitative and quantitative mtDNA integrity. In children, most MRC disorders are associated with nuclear gene defects rather than alterations in the mtDNA itself.The mitochondrial DNA depletion syndromes (MDSs) are a clinically heterogeneous group of disorders with an autosomal recessive pattern of transmission that have onset in infancy or early childhood and are characterized by a reduced number of copies of mtDNA in affected tissues and organs. The MDSs can be divided into least four clinical presentations: hepatocerebral, myopathic, encephalomyopathic and neurogastrointestinal. The focus of this review is to offer an overview of these syndromes, listing the clinical phenotypes, together with their relative frequency, mutational spectrum, and possible insights for improving diagnostic strategies.CN was supported by the Portuguese Foundation for Science and Technology (SFRH/BD/45247/2008). LSA was supported by the Portuguese Foundation for Science and Technology (FCT C2008/INSA/P4)
Synthesis of Large-Scale Monolayer 1T′-MoTe2and Its Stabilization via Scalable hBN Encapsulation
Out of the different structural phases of molybdenum ditelluride (MoTe2), the distorted octahedral 1T′ possesses great interest for fundamental physics and is a promising candidate for the implementation of innovative devices such as topological transistors. Indeed, 1T′-MoTe2 is a semimetal with superconductivity, which has been predicted to be a Weyl semimetal and a quantum spin Hall insulator in bulk and monolayer form, respectively. Large instability of monolayer 1T′-MoTe2 in environmental conditions, however, has made its investigation extremely challenging so far. In this work, we demonstrate homogeneous growth of large single-crystal (up to 500 μm) monolayer 1T′-MoTe2 via chemical vapor deposition (CVD) and its stabilization in air with a scalable encapsulation approach. The encapsulant is obtained by electrochemically delaminating CVD hexagonal boron nitride (hBN) from copper foil, and it is applied on the freshly grown 1T′-MoTe2 via a top-down dry lamination step. The structural and electrical properties of encapsulated 1T′-MoTe2 have been monitored over several months to assess the degree of degradation of the material. We find that when encapsulated with hBN, the lifetime of monolayer 1T′-MoTe2 successfully increases from a few minutes to more than a month. Furthermore, the encapsulated monolayer can be subjected to transfer, device processing, and heating and cooling cycles without degradation of its properties. The potential of this scalable heterostack is confirmed by the observation of signatures of low-temperature phase transition in monolayer 1T′-MoTe2 by both Raman spectroscopy and electrical measurements. The growth and encapsulation methods reported in this work can be employed for further fundamental studies of this enticing material as well as facilitate the technological development of monolayer 1T′-MoTe2
High-speed double layer graphene electro-absorption modulator on SOI waveguide
We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation speed is achieved thanks to the quality of the CVD pre-patterned single crystal growth and transfer on wafer method that permitted the integration of high-quality scalable graphene and low contact resistance. By demonstrating this high-speed CVD graphene EAM modulator integrated on Si photonics and the scalable approach, we are confident that graphene can satisfy the main requirements to be a competitive technology for photonics
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