Single fermion manipulation via superconducting phase differences in multiterminal Josephson junctions

We show how the superconducting phase difference in a Josephson junction may be used to split the Kramers degeneracy of its energy levels and to remove all the properties associated with time reversal symmetry. The superconducting phase difference is known to be ineffective in two-terminal short Josephson junctions, where irrespective of the junction structure the induced Kramers degeneracy splitting is suppressed and the ground state fermion parity must stay even, so that a protected zero-energy Andreev level crossing may never appear. Our main result is that these limitations can be completely avoided by using multi-terminal Josephson junctions. There the Kramers degeneracy breaking becomes comparable to the superconducting gap, and applying phase differences may cause the change of the ground state fermion parity from even to odd. We prove that the necessary condition for the appearance of a fermion parity switch is the presence of a "discrete vortex" in the junction: the situation when the phases of the superconducting leads wind by $2\pi$. Our approach offers new strategies for creation of Majorana bound states as well as spin manipulation. Our proposal can be implemented using any low density, high spin-orbit material such as InAs quantum wells, and can be detected using standard tools.Comment: Source code available as ancillary files. 10 pages, 7 figures. v2: minor changes, published versio

Characterization of the residual stresses in spray-formed steels using neutron diffraction

Neutron diffraction was used to characterize the residual stresses in an as-sprayed tube-shaped steel preform. The measured residual stress distributions were compared with those simulated using finite element method by taking into account the effects of the thermal history, porosity and different phases of the sprayed preform. The porosity was measured using X-ray microcomputed tomography. The study revealed for the first time the correlation between the distribution of porosity and residual stress developed in the as-sprayed preform

Long-term stability studies of a semiconductor photoelectrode in three-electrode configuration

Improving the stability of semiconductor materials is one of the major challenges for sustainable and economic photoelectrochemical water splitting. N-terminated GaN nanostructures have emerged as a practical protective layer for conventional high efficiency but unstable Si and III-V photoelectrodes due to their near-perfect conduction band-alignment, which enables efficient extraction of photo-generated electrons, and N-terminated surfaces, which protects against chemical and photo-corrosion. Here, we demonstrate that Pt-decorated GaN nanostructures on an n+-p Si photocathode can exhibit an ultrahigh stability of 3000 h (i.e., over 500 days for usable sunlight ∼5.5 h per day) at a large photocurrent density (>35 mA cm-2) in three-electrode configuration under AM 1.5G one-sun illumination. The measured applied bias photon-to-current efficiency of 11.9%, with an excellent onset potential of ∼0.56 V vs. RHE, is one of the highest values reported for a Si photocathode under AM 1.5G one-sun illumination. This study provides a paradigm shift for the design and development of semiconductor photoelectrodes for PEC water splitting: stability is no longer limited by the light absorber, but rather by co-catalyst particles

Flopping-mode electric dipole spin resonance

Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate "flopping-mode" electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge delocalization across the double quantum dot enhances coupling to the drive field and enables low power electric dipole spin resonance. Through dispersive measurements of the single electron spin state, we demonstrate a nearly three order of magnitude improvement in driving efficiency using flopping-mode resonance, which should facilitate low power spin control in quantum dot arrays