Reduced Joule heating in nanowires

The temperature distribution in nanowires due to Joule heating is studied analytically using a continuum model and a Green's function approach. We show that the temperatures reached in nanowires can be much lower than that predicted by bulk models of Joule heating, due to heat loss at the nanowire surface that is important at nanoscopic dimensions, even when the thermal conductivity of the environment is relatively low. In addition, we find that the maximum temperature in the nanowire scales weakly with length, in contrast to the bulk system. A simple criterion is presented to assess the importance of these effects. The results have implications for the experimental measurements of nanowire thermal properties, for thermoelectric applications, and for controlling thermal effects in nanowire electronic devices.Comment: 4 pages, 3 figures. To appear in Applied Physics Letter

Crosstalk between nanotube devices: contact and channel effects

At reduced dimensionality, Coulomb interactions play a crucial role in determining device properties. While such interactions within the same carbon nanotube have been shown to have unexpected properties, device integration and multi-nanotube devices require the consideration of inter-nanotube interactions. We present calculations of the characteristics of planar carbon nanotube transistors including interactions between semiconducting nanotubes and between semiconducting and metallic nanotubes. The results indicate that inter-tube interactions affect both the channel behavior and the contacts. For long channel devices, a separation of the order of the gate oxide thickness is necessary to eliminate inter-nanotube effects. Because of an exponential dependence of this length scale on dielectric constant, very high device densities are possible by using high-k dielectrics and embedded contacts

Multiple Functionality in Nanotube Transistors

Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions. At larger gate voltages, channel inversion leads to resonant tunneling through an electrostatically defined nanoscale quantum dot. Thus the transistor becomes a gated resonant tunelling device, with negative differential resistance at a tunable threshold. For the dimensions considered here, the device operates in the Coulomb blockade regime, even at room temperature.Comment: To appear in Phys. Rev. Let

Negative differential resistance in nanotube devices

Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-binding approximation. The undoped junctions in particular may be suitable for device integration.Comment: 4 pages, 4 figures, to appear in Physical Review Letter

Properties of short channel ballistic carbon nanotube transistors with ohmic contacts

We present self-consistent, non-equilibrium Green's function calculations of the characteristics of short channel carbon nanotube transistors, focusing on the regime of ballistic transport with ohmic contacts. We first establish that the band lineup at the contacts is renormalized by charge transfer, leading to Schottky contacts for small diameter nanotubes and ohmic contacts for large diameter nanotubes, in agreement with recent experiments. For short channel ohmic contact devices, source-drain tunneling and drain-induced barrier lowering significantly impact the current-voltage characteristics. Furthermore, the ON state conductance shows a temperature dependence, even in the absence of phonon scattering or Schottky barriers. This last result also agrees with recently reported experimental measurements.Comment: Nanotechnology, in pres

Long-Range Ordering of Vibrated Polar Disks

Vibrated polar disks have been used experimentally to investigate collective motion of driven particles, where fully-ordered asymptotic regimes could not be reached. Here we present a model reproducing quantitatively the single, binary and collective properties of this granular system. Using system sizes not accessible in the laboratory, we show in silico that true long-range order is possible in the experimental system. Exploring the model's parameter space, we find a phase diagram qualitatively different from that of dilute or point-like particle systems.Comment: 5 pages, 4 figure

A JKO splitting scheme for Kantorovich-Fisher-Rao gradient flows

In this article we set up a splitting variant of the JKO scheme in order to handle gradient flows with respect to the Kantorovich-Fisher-Rao metric, recently introduced and defined on the space of positive Radon measure with varying masses. We perform successively a time step for the quadratic Wasserstein/Monge-Kantorovich distance, and then for the Hellinger/Fisher-Rao distance. Exploiting some inf-convolution structure of the metric we show convergence of the whole process for the standard class of energy functionals under suitable compactness assumptions, and investigate in details the case of internal energies. The interest is double: On the one hand we prove existence of weak solutions for a certain class of reaction-advection-diffusion equations, and on the other hand this process is constructive and well adapted to available numerical solvers.Comment: Final version, to appear in SIAM SIM

Can Electric Field Induced Energy Gaps In Metallic Carbon Nanotubes?

The low-energy electronic structure of metallic single-walled carbon nanotube (SWNT) in an external electric field perpendicular to the tube axis is investigated. Based on tight-binding approximation, a field-induced energy gap is found in all (n, n) SWNTs, and the gap shows strong dependence on the electric field and the size of the tubes. We numerically find a universal scaling that the gap is a function of the electric field and the radius of SWNTs, and the results are testified by the second-order perturbation theory in weak field limit. Our calculation shows the field required to induce a 0.1 ${\rm eV}$ gap in metallic SWNTs can be easily reached under the current experimental conditions. It indicates a kind of possibility to apply nanotubes to electric signal-controlled nanoscale switching devices

RLZAP: Relative Lempel-Ziv with Adaptive Pointers

Relative Lempel-Ziv (RLZ) is a popular algorithm for compressing databases of genomes from individuals of the same species when fast random access is desired. With Kuruppu et al.'s (SPIRE 2010) original implementation, a reference genome is selected and then the other genomes are greedily parsed into phrases exactly matching substrings of the reference. Deorowicz and Grabowski (Bioinformatics, 2011) pointed out that letting each phrase end with a mismatch character usually gives better compression because many of the differences between individuals' genomes are single-nucleotide substitutions. Ferrada et al. (SPIRE 2014) then pointed out that also using relative pointers and run-length compressing them usually gives even better compression. In this paper we generalize Ferrada et al.'s idea to handle well also short insertions, deletions and multi-character substitutions. We show experimentally that our generalization achieves better compression than Ferrada et al.'s implementation with comparable random-access times